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Results: 1-13 |
Results: 13
Growth of GaInP on misoriented substrates using solid source MBE
Authors: Orsila, S Tukiainen, A Uusimaa, P Dekker, J Leinonen, T Pessa, M
Citation: S. Orsila et al., Growth of GaInP on misoriented substrates using solid source MBE, J CRYST GR, 227, 2001, pp. 249-254
Red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy
Authors: Saarinen, M Xiang, N Vilokkinen, V Melanen, P Orsila, S Uusimaa, P Savolainen, P Toivonen, M Pessa, M
Citation: M. Saarinen et al., Red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 324-328
Resonant cavity light-emitting diodes grown by solid source MBE
Authors: Orsila, S Leinonen, T Uusimaa, P Saarinen, M Guina, M Sipila, P Vilokkinen, V Melanen, P Dumitrescu, M Pessa, M
Citation: S. Orsila et al., Resonant cavity light-emitting diodes grown by solid source MBE, J CRYST GR, 227, 2001, pp. 346-351
Influence of deep level impurities on modulation response of InGaP light emitting diodes
Authors: Guina, M Dekker, J Tukiainen, A Orsila, S Saarinen, M Dumitrescu, M Sipila, P Savolainen, P Pessa, M
Citation: M. Guina et al., Influence of deep level impurities on modulation response of InGaP light emitting diodes, J APPL PHYS, 89(2), 2001, pp. 1151-1155
Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth
Authors: Guina, M Orsila, S Dumitrescu, M Saarinen, M Sipila, P Vilokkinen, V Roycroft, B Uusimaa, P Toivonen, M Pessa, M
Citation: M. Guina et al., Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth, IEEE PHOTON, 12(7), 2000, pp. 786-788
Resonant cavity light-emitting diodes at 660 and 880 nm
Authors: Vilokkinen, V Sipila, P Melanen, P Saarinen, M Orsila, S Dumitrescu, M Savolainen, P Toivonen, M Pessa, M
Citation: V. Vilokkinen et al., Resonant cavity light-emitting diodes at 660 and 880 nm, MAT SCI E B, 74(1-3), 2000, pp. 165-167
Modeling and optimization of resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy
Authors: Dumitrescu, M Toikkanen, L Sipila, P Vilokkinen, V Melanen, P Saarinen, M Orsila, S Savolainen, P Toivonen, M Pessa, M
Citation: M. Dumitrescu et al., Modeling and optimization of resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy, MICROEL ENG, 51-2, 2000, pp. 449-460
Growth of resonant cavity quantum well light emitting diodes and two-junction solar cells by solid source molecular beam epitaxy
Authors: Pessa, M Toivonen, M Savolainen, P Orsila, S Sipila, P Saarinen, M Melanen, P Vilokkinen, V Uusimaa, P Haapamaa, J
Citation: M. Pessa et al., Growth of resonant cavity quantum well light emitting diodes and two-junction solar cells by solid source molecular beam epitaxy, THIN SOL FI, 367(1-2), 2000, pp. 260-266
AlGaInAs/InP strained-layer quantum well lasers at 1.3 mu m grown by solidsource molecular beam epitaxy
Authors: Savolainen, P Toivonen, M Orsila, S Saarinen, M Melanen, P Vilokkinen, V Dumitrescu, M Panarello, T Pessa, M
Citation: P. Savolainen et al., AlGaInAs/InP strained-layer quantum well lasers at 1.3 mu m grown by solidsource molecular beam epitaxy, J ELEC MAT, 28(8), 1999, pp. 980-985
High-power edge emitting red laser diode optimisation using optical simulation
Authors: Dumitrescu, M Toivonen, M Savolainen, P Orsila, S Pessa, M
Citation: M. Dumitrescu et al., High-power edge emitting red laser diode optimisation using optical simulation, OPT QUANT E, 31(9-10), 1999, pp. 1009-1030
Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodes
Authors: Toivonen, M Savolainen, P Orsila, S Vilokkinen, V Pessa, M Corvini, P Fang, F Nabiev, RF Jansen, M
Citation: M. Toivonen et al., Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodes, J CRYST GR, 202, 1999, pp. 877-881
Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes
Authors: Orsila, S Kongas, J Toivonen, M Savolainen, P Jalonen, M Pessa, M
Citation: S. Orsila et al., Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes, J CRYST GR, 202, 1999, pp. 985-989
Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy
Authors: Dekker, J Tukiainen, A Xiang, N Orsila, S Saarinen, M Toivonen, M Pessa, M Tkachenko, N Lemmetyinen, H
Citation: J. Dekker et al., Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy, J APPL PHYS, 86(7), 1999, pp. 3709-3713
Risultati: 1-13 |