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PAGNODROSSIAUX P
GABORIT F
TSCHERPTNER N
ROUX L
STARCK C
FERNIER B
Citation: P. Pagnodrossiaux et al., HIGH-TEMPERATURE (GA)INASP HIGH BAND-GAP GAINASP BARRIERS 1.3 MU-M SL-MQW LASERS GROWN BY GAS-SOURCE MBE, Journal of crystal growth, 175, 1997, pp. 948-954
Authors:
SALET P
PAGNODROSSIAUX P
GABORIT F
PLAIS A
JACQUET J
Citation: P. Salet et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY AND OPTICAL CHARACTERIZATION OF HIGHLY-REFLECTIVE INGAASP INP MULTILAYER BRAGG MIRRORS FOR 1.31-MU-M VERTICAL-CAVITY LASERS/, Electronics Letters, 33(13), 1997, pp. 1145-1147
Authors:
BISSESSUR H
PAGNODROSSIAUX P
MESTRIC R
MARTIN B
Citation: H. Bissessur et al., EXTREMELY SMALL POLARIZATION-INDEPENDENT PHASED-ARRAY DEMULTIPLEXERS ON INP, IEEE photonics technology letters, 8(4), 1996, pp. 554-556
Authors:
BAYER M
SCHILLING O
FORCHEL A
REINECKE TL
KNIPP PA
PAGNODROSSIAUX P
GOLDSTEIN L
Citation: M. Bayer et al., SPLITTING OF ELECTRONIC LEVELS WITH POSITIVE AND NEGATIVE ANGULAR MOMENTA IN IN0.53GA0.47AS INP QUANTUM DOTS BY A MAGNETIC-FIELD/, Physical review. B, Condensed matter, 53(23), 1996, pp. 15810-15814
Authors:
WANG KH
BAYER M
FORCHEL A
ILS P
BENNER S
HAUG H
PAGNODROSSIAUX P
GOLDSTEIN L
Citation: Kh. Wang et al., SUBBAND RENORMALIZATION IN DENSE ELECTRON-HOLE PLASMAS IN IN0.53GA0.47AS INP QUANTUM WIRES/, Physical review. B, Condensed matter, 53(16), 1996, pp. 10505-10508
Authors:
WANG KH
BAYER M
ILS P
FORCHEL A
BENNER S
HAUG H
PAGNODROSSIAUX P
GOLDSTEIN L
Citation: Kh. Wang et al., MANY-BODY EFFECTS IN THE LUMINESCENCE OF IN0.53GA0.47AS INP QUANTUM WIRES/, Solid-state electronics, 40(1-8), 1996, pp. 287-289
Authors:
LESTRA A
GABORIT F
GAUMONTGOARIN E
GOLDSTEIN L
LESTERLIN D
PAGNODROSSIAUX P
Citation: A. Lestra et al., ETCHING OF DEEP V-GROOVE CHANNELS ON A (001)INP SUBSTRATE AND REGROWTH BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 167(3-4), 1996, pp. 446-451
Authors:
KIESELING F
BRAUN W
WANG KH
FORCHEL A
KNIPP PA
REINECKE TL
PAGNODROSSIAUX P
GOLDSTEIN L
Citation: F. Kieseling et al., BARRIER-CONFINEMENT-CONTROLLED CARRIER TRANSPORT INTO QUANTUM WIRES, Physical review. B, Condensed matter, 52(16), 1995, pp. 11595-11598
Authors:
SCHILLING O
FORCHEL A
LEBEDEV M
PAGNODROSSIAUX P
GOLDSTEIN L
Citation: O. Schilling et al., DEEP ETCHED INGAAS INP QUANTUM DOTS WITH STRONG LATERAL CONFINEMENT EFFECTS/, Superlattices and microstructures, 16(3), 1994, pp. 261-264
Authors:
ILS P
FORCHEL A
WANG KH
PAGNODROSSIAUX P
GOLDSTEIN L
Citation: P. Ils et al., LATERAL SUBBAND TRANSITIONS IN THE LUMINESCENCE SPECTRA OF A ONE-DIMENSIONAL ELECTRON-HOLE PLASMA IN IN0.53GA0.47AS INP QUANTUM WIRES/, Physical review. B, Condensed matter, 50(16), 1994, pp. 11746-11749
Authors:
BISSESSUR H
GABORIT F
MARTIN B
PAGNODROSSIAUX P
PEYRE JL
RENAUD M
Citation: H. Bissessur et al., 16 CHANNEL PHASED-ARRAY WAVELENGTH DEMULTIPLEXER ON INP WITH LOW POLARIZATION SENSITIVITY, Electronics Letters, 30(4), 1994, pp. 336-337
Authors:
VINCHANT JF
RENAUD M
ERMAN M
PEYRE JL
JARRY P
PAGNODROSSIAUX P
Citation: Jf. Vinchant et al., INP DIGITAL OPTICAL SWITCH - KEY ELEMENT FOR GUIDED-WAVE PHOTONIC SWITCHING, IEE proceedings. Part J, Optoelectronics, 140(5), 1993, pp. 301-307
Authors:
PAGNODROSSIAUX P
RENAUD M
GABORIT F
MARTIN B
Citation: P. Pagnodrossiaux et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF SEMIINSULATING GAXIN1-XASYP1-Y INP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 127(1-4), 1993, pp. 237-240