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Results:
1-7
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Results: 7
Authors:
ROTHSCHILD M
FORTE AR
KUNZ RR
PALMATEER SC
SEDLACEK JHC
Citation: M. Rothschild et al., LITHOGRAPHY AT A WAVELENGTH OF 193 NM, IBM journal of research and development, 41(1-2), 1997, pp. 49-55
Authors:
ROTHSCHILD M
BURNS JA
CANN SG
FORTE AR
KEAST CL
KUNZ RR
PALMATEER SC
SEDLACEK JHC
UTTARO R
GRENVILLE A
CORLISS D
Citation: M. Rothschild et al., HOW PRACTICAL IS 193 NM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4157-4161
Authors:
PALMATEER SC
FORTE AR
KUNZ RR
HORN MW
Citation: Sc. Palmateer et al., DRY DEVELOPMENT OF SUB-0.25 MU-M FEATURES PATTERNED WITH 193 NM SILYLATION RESIST, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1132-1136
Authors:
ROTHSCHILD M
FORTE AR
HORN MW
KUNZ RR
PALMATEER SC
SEDLACEK JHC
Citation: M. Rothschild et al., 193-NM LITHOGRAPHY, IEEE journal of selected topics in quantum electronics, 1(3), 1995, pp. 916-923
Authors:
KOSTELAK RL
WEIDMAN TW
VAIDYA S
JOUBERT O
PALMATEER SC
HIBBS M
Citation: Rl. Kostelak et al., APPLICATION OF PLASMA-POLYMERIZED METHYLSILANE RESIST FOR ALL-DRY 193NM DEEP-ULTRAVIOLET PROCESSING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2994-2999
Authors:
STERN MB
PALMATEER SC
HORN MW
ROTHSCHILD M
MAXWELL BE
CURTIN JE
Citation: Mb. Stern et al., PROFILE CONTROL IN DRY DEVELOPMENT OF HIGH-ASPECT-RATIO RESIST STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 3017-3021
Authors:
AULL BF
NICHOLS KB
MAKI PA
PALMATEER SC
BROWN ER
LIND TA
Citation: Bf. Aull et al., MONOLITHIC OPTOELECTRONIC TRANSISTOR - A NEW SMART-PIXEL DEVICE, Applied physics letters, 63(11), 1993, pp. 1555-1557
Risultati:
1-7
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