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Results:
1-14
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Results: 14
Authors:
APERATHITIS E
SCOTT CG
SANDS D
FOUKARAKI V
HATZOPOULOS Z
PANAYOTATOS P
Citation: E. Aperathitis et al., EFFECT OF TEMPERATURE ON GAAS ALGAAS MULTIPLE-QUANTUM-WELL SOLAR-CELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 85-89
Authors:
ANDROULIDAKI M
MICHELAKIS C
LAGADAS M
FOUKARAKI V
PANAYOTATOS P
Citation: M. Androulidaki et al., UNIFORMITY STUDY IN PM-HEMT STRUCTURES AND DEVICES BY OPTICAL AND ELECTRICAL CHARACTERIZATION, Microelectronic engineering, 43-4, 1998, pp. 567-573
Authors:
STRIFAS N
PANAYOTATOS P
CHRISTOU A
Citation: N. Strifas et al., OPTICAL INTERCONNECT RELIABILITY, Optical engineering, 37(8), 1998, pp. 2416-2418
Authors:
BARTZOS D
PANAYOTATOS P
MCAFEE SR
DAUT DG
Citation: D. Bartzos et al., PARAMETER EXTRACTION FOR A FIGURE-OF-MERIT APPROACH FOR THE COMPARISON OF OPTICAL INTERCONNECTS, Optical engineering, 37(10), 1998, pp. 2772-2783
Authors:
APERATHITIS E
HATZOPOULOS Z
ANDROULIDAKI M
FOUKARAKI V
KONDILIS A
SCOTT CG
SANDS D
PANAYOTATOS P
Citation: E. Aperathitis et al., RF-SPUTTERED INDIUM-TIN-OXIDE AS ANTIREFLECTIVE COATING FOR GAAS SOLAR-CELLS, Solar energy materials and solar cells, 45(2), 1997, pp. 161-168
Authors:
PAPAVASSILIOU C
GEORGAKILAS A
APERATHITIS E
KRASNY H
LOCHTERMANN E
PANAYOTATOS P
Citation: C. Papavassiliou et al., SILICON SUBSTRATE OPTIMIZATION FOR MICROWAVE APPLICATIONS OF GAAS SI MESFETS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 351-354
Authors:
LAGADAS M
HATZOPOULOS Z
KORNILIOS N
ANDROULIDAKI M
CHRISTOU A
PANAYOTATOS P
Citation: M. Lagadas et al., ELECTRICAL-PROPERTIES OF N-GAAS EPILAYERS, FET AND HEMT STRUCTURES GROWN ON LT-GAAS BY MBE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 355-358
Authors:
GEORGAKILAS A
APERATHITIS E
FOUKARAKI V
KAYAMBAKI M
PANAYOTATOS P
Citation: A. Georgakilas et al., INVESTIGATION OF THE GAAS SI HETEROJUNCTION BAND LINEUP WITH CAPACITANCE AND CURRENT VERSUS VOLTAGE MEASUREMENTS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 383-386
Authors:
GEORGAKILAS A
PAPAVASSILIOU C
CONSTANTINIDIS G
TSAGARAKI K
KRASNY H
LOCHTERMANN E
PANAYOTATOS P
Citation: A. Georgakilas et al., EFFECTS OF SI(100) TILTING ANGLE AND PRELAYER CONDITIONS ON GAAS SI HETEROSTRUCTURES/, Applied surface science, 102, 1996, pp. 67-72
Authors:
APERATHITIS E
KAYIAMBAKI M
FOUKARAKI V
HALKIAS G
PANAYOTATOS P
GEORGAKILAS A
Citation: E. Aperathitis et al., HETEROJUNCTION DIODES NGAAS PSI WITH IDEAL CHARACTERISTICS/, Applied surface science, 102, 1996, pp. 208-211
Authors:
ASHENFORD DE
DWEYDARI AW
SANDS D
SCOTT CG
YOUSAF M
APERATHITIS E
HATZOPOULOS Z
PANAYOTATOS P
Citation: De. Ashenford et al., INVESTIGATION OF P-I-N SOLAR-CELL EFFICIENCY ENHANCEMENT BY USE OF MQW STRUCTURES IN THE I-REGION, Journal of crystal growth, 159(1-4), 1996, pp. 920-924
Authors:
KAYAMBAKI M
CALLEC R
CONSTANTINIDIS G
PAPAVASSILIOU C
LOCHTERMANN E
KRASNY H
PAPADAKIS N
PANAYOTATOS P
GEORGAKILAS A
Citation: M. Kayambaki et al., INVESTIGATION OF SI-SUBSTRATE PREPARATION FOR GAAS-ON-SI MBE GROWTH, Journal of crystal growth, 157(1-4), 1995, pp. 300-303
Authors:
GEORGAKILAS A
STOEMENOS J
TSAGARAKI K
KOMNINOU P
FLEVARIS N
PANAYOTATOS P
CHRISTOU A
Citation: A. Georgakilas et al., GENERATION AND ANNIHILATION OF ANTIPHASE DOMAIN BOUNDARIES IN GAAS ONSI GROWN BY MOLECULAR-BEAM EPITAXY, Journal of materials research, 8(8), 1993, pp. 1908-1921
Authors:
WHITLOCK JB
PANAYOTATOS P
SHARMA GD
COX MD
SAUERS RR
BIRD GR
Citation: Jb. Whitlock et al., INVESTIGATIONS OF MATERIALS AND DEVICE STRUCTURES FOR ORGANIC SEMICONDUCTOR SOLAR-CELLS, Optical engineering, 32(8), 1993, pp. 1921-1934
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