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Results: 1-11 |
Results: 11
ENHANCED EPITAXIAL-GROWTH ON SUBSTRATES MODIFIED BY ION SPUTTERING - GE ON GAAS(110)
Authors: BRAKE J WANG XS PECHMAN RJ WEAVER JH
Citation: J. Brake et al., ENHANCED EPITAXIAL-GROWTH ON SUBSTRATES MODIFIED BY ION SPUTTERING - GE ON GAAS(110), Physical review. B, Condensed matter, 53(16), 1996, pp. 11170-11175
TREADS IN SURFACE ROUGHENING - ANALYSIS OF ION-SPUTTERED GAAS(110)
Authors: WANG XS PECHMAN RJ WEAVER JH
Citation: Xs. Wang et al., TREADS IN SURFACE ROUGHENING - ANALYSIS OF ION-SPUTTERED GAAS(110), Surface science, 364(1), 1996, pp. 511-518
EFFECT OF ION SPUTTERING ON GE EPITAXY ON GAAS(110)
Authors: WANG XS BRAKE J PECHMAN RJ WEAVER JH
Citation: Xs. Wang et al., EFFECT OF ION SPUTTERING ON GE EPITAXY ON GAAS(110), Applied physics letters, 68(12), 1996, pp. 1660-1662
ION SPUTTERING OF GAAS(110) - FROM INDIVIDUAL BOMBARDMENT EVENTS TO MULTILAYER REMOVAL
Authors: WANG XS PECHMAN RJ WEAVER JH
Citation: Xs. Wang et al., ION SPUTTERING OF GAAS(110) - FROM INDIVIDUAL BOMBARDMENT EVENTS TO MULTILAYER REMOVAL, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2031-2040
INTERACTIONS OF BR WITH SI(111)-7X7 - CHEMISORPTION, STEP RETREAT, AND TERRACE ETCHING
Authors: PECHMAN RJ WANG XS WEAVER JH
Citation: Rj. Pechman et al., INTERACTIONS OF BR WITH SI(111)-7X7 - CHEMISORPTION, STEP RETREAT, AND TERRACE ETCHING, Physical review. B, Condensed matter, 52(15), 1995, pp. 11412-11423
VACANCY KINETICS AND SPUTTERING OF GAAS(110)
Authors: PECHMAN RJ WANG XS WEAVER JH
Citation: Rj. Pechman et al., VACANCY KINETICS AND SPUTTERING OF GAAS(110), Physical review. B, Condensed matter, 51(16), 1995, pp. 10929-10936
CHEMISORPTION AND THERMALLY ACTIVATED ETCHING OF SI(100)-2X1 BY IODINE
Authors: RIOUX D STEPNIAK F PECHMAN RJ WEAVER JH
Citation: D. Rioux et al., CHEMISORPTION AND THERMALLY ACTIVATED ETCHING OF SI(100)-2X1 BY IODINE, Physical review. B, Condensed matter, 51(16), 1995, pp. 10981-10988
FORMATION OF BR-TERMINATED SI-6 RINGS DURING ETCHING OF SI(111)-7X7
Authors: PECHMAN RJ MORIWAKI T WEAVER JH KHOO GS
Citation: Rj. Pechman et al., FORMATION OF BR-TERMINATED SI-6 RINGS DURING ETCHING OF SI(111)-7X7, Surface science, 341(3), 1995, pp. 1085-1090
TEMPERATURE-DEPENDENT SURFACE MORPHOLOGIES FOR BR-ETCHED SI(100)-2X1
Authors: RIOUX D PECHMAN RJ CHANDER M WEAVER JH
Citation: D. Rioux et al., TEMPERATURE-DEPENDENT SURFACE MORPHOLOGIES FOR BR-ETCHED SI(100)-2X1, Physical review. B, Condensed matter, 50(7), 1994, pp. 4430-4438
INTERACTION OF 300-5000-EV IONS WITH GAAS(110)
Authors: WANG XS PECHMAN RJ WEAVER JH
Citation: Xs. Wang et al., INTERACTION OF 300-5000-EV IONS WITH GAAS(110), Applied physics letters, 65(22), 1994, pp. 2818-2820
ELECTRON-STIMULATED POLYMERIZATION OF SOLID C-60
Authors: ZHAO YB POIRIER DM PECHMAN RJ WEAVER JH
Citation: Yb. Zhao et al., ELECTRON-STIMULATED POLYMERIZATION OF SOLID C-60, Applied physics letters, 64(5), 1994, pp. 577-579
Risultati: 1-11 |