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Results: 1-25 | 26-35
Results: 1-25/35
AN EXPERIMENTAL-STUDY OF CHEMICAL-VAPOR-DEPOSITION OF TUNGSTEN ON TI TIN ADHESION BILAYERS - MECHANICAL-PROPERTIES/
Authors: MOUROUX A ZHANG SL PETERSSON CS PALMANS R MAEX K AHLGREN T KEINONEN J
Citation: A. Mouroux et al., AN EXPERIMENTAL-STUDY OF CHEMICAL-VAPOR-DEPOSITION OF TUNGSTEN ON TI TIN ADHESION BILAYERS - MECHANICAL-PROPERTIES/, Surface & coatings technology, 99(3), 1998, pp. 274-280
AN INVESTIGATION OF THE BLOCKING CHARACTERISTICS OF THE PERMEABLE BASE TRANSISTOR
Authors: NILSSON HE ANDERSSON T SANNEMO U PETERSSON CS
Citation: He. Nilsson et al., AN INVESTIGATION OF THE BLOCKING CHARACTERISTICS OF THE PERMEABLE BASE TRANSISTOR, Solid-state electronics, 42(3), 1998, pp. 297-305
FERROELECTRIC-FILMS PREPARED BY LASER-ABLATION DIRECTLY ON SIC SUBSTRATES
Authors: MOU D LINNROS J PETERSSON CS RAO KV
Citation: D. Mou et al., FERROELECTRIC-FILMS PREPARED BY LASER-ABLATION DIRECTLY ON SIC SUBSTRATES, Journal of applied physics, 84(10), 1998, pp. 5785-5789
SIMULATION OF THE X-RAY RESPONSE OF SCINTILLATOR COATED SILICON CCDS
Authors: FROJDH C NILSSON HE NELVIG P PETERSSON CS
Citation: C. Frojdh et al., SIMULATION OF THE X-RAY RESPONSE OF SCINTILLATOR COATED SILICON CCDS, IEEE transactions on nuclear science, 45(3), 1998, pp. 374-378
DEPOSITION OF SCINTILLATING LAYERS OF BISMUTH-GERMANATE (BGO) FILMS FOR X-RAY-DETECTOR APPLICATIONS
Authors: DUAN M FROJDH C THUNGSTROM G WANG LW LINNROS J PETERSSON CS
Citation: M. Duan et al., DEPOSITION OF SCINTILLATING LAYERS OF BISMUTH-GERMANATE (BGO) FILMS FOR X-RAY-DETECTOR APPLICATIONS, IEEE transactions on nuclear science, 45(3), 1998, pp. 525-527
FABRICATION AND PROPERTIES OF METAL FERROELECTRICS/SEMICONDUCTOR DIODES ON 4H-SIC/
Authors: MOU D PETERSSON CS LINNROS J RAO KV
Citation: D. Mou et al., FABRICATION AND PROPERTIES OF METAL FERROELECTRICS/SEMICONDUCTOR DIODES ON 4H-SIC/, Applied physics letters, 73(11), 1998, pp. 1532-1534
WORK FUNCTION OF BORON-DOPED POLYCRYSTALLINE SIXGE1-X FILMS
Authors: HELLBERG PE ZHANG SL PETERSSON CS
Citation: Pe. Hellberg et al., WORK FUNCTION OF BORON-DOPED POLYCRYSTALLINE SIXGE1-X FILMS, IEEE electron device letters, 18(9), 1997, pp. 456-458
FABRICATION OF AN INTEGRATED DELTA-E-E-SILICON DETECTOR BY WAFER BONDING USING COBALT DISILICIDE
Authors: THUNGSTROM G VANVELDHUIZEN EJ WESTERBERG L NORLIN LO PETERSSON CS
Citation: G. Thungstrom et al., FABRICATION OF AN INTEGRATED DELTA-E-E-SILICON DETECTOR BY WAFER BONDING USING COBALT DISILICIDE, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 391(2), 1997, pp. 315-328
A SELF-ALIGNED SILICIDE TECHNOLOGY WITH THE MO TI BILAYER SYSTEM/
Authors: KAPLAN W MOUROUX A ZHANG SL PETERSSON CS
Citation: W. Kaplan et al., A SELF-ALIGNED SILICIDE TECHNOLOGY WITH THE MO TI BILAYER SYSTEM/, Microelectronic engineering, 37-8(1-4), 1997, pp. 461-466
WHAT IS THE ROLE OF THE METAL ON THE FERMI-LEVEL POSITION AT THE INTERFACE WITH IV-IV COMPOUNDS
Authors: AUBRYFORTUNA V PERROSSIER JL MAMOR M MEYER F FROJDH C THUNGSTROM G PETERSSON CS BODNAR S REGOLINI JL
Citation: V. Aubryfortuna et al., WHAT IS THE ROLE OF THE METAL ON THE FERMI-LEVEL POSITION AT THE INTERFACE WITH IV-IV COMPOUNDS, Microelectronic engineering, 37-8(1-4), 1997, pp. 573-579
ENHANCEMENT OF THE FORMATION OF THE C54 PHASE OF TISI2 THROUGH THE INTRODUCTION OF AN INTERPOSED LAYER OF TANTALUM
Authors: MOUROUX A ZHANG SL PETERSSON CS
Citation: A. Mouroux et al., ENHANCEMENT OF THE FORMATION OF THE C54 PHASE OF TISI2 THROUGH THE INTRODUCTION OF AN INTERPOSED LAYER OF TANTALUM, Physical review. B, Condensed matter, 56(16), 1997, pp. 10614-10620
OXIDATION OF SILICON-GERMANIUM ALLOYS .1. AN EXPERIMENTAL-STUDY
Authors: HELLBERG PE ZHANG SL DHEURLE FM PETERSSON CS
Citation: Pe. Hellberg et al., OXIDATION OF SILICON-GERMANIUM ALLOYS .1. AN EXPERIMENTAL-STUDY, Journal of applied physics, 82(11), 1997, pp. 5773-5778
OXIDATION OF SILICON-GERMANIUM ALLOYS .2. A MATHEMATICAL-MODEL
Authors: HELLBERG PE ZHANG SL DHEURLE FM PETERSSON CS
Citation: Pe. Hellberg et al., OXIDATION OF SILICON-GERMANIUM ALLOYS .2. A MATHEMATICAL-MODEL, Journal of applied physics, 82(11), 1997, pp. 5779-5787
BORON-DOPED POLYCRYSTALLINE SIXGE1-X FILMS - DOPANT ACTIVATION AND SOLID SOLUBILITY
Authors: HELLBERG PE GAGNOR A ZHANG SL PETERSSON CS
Citation: Pe. Hellberg et al., BORON-DOPED POLYCRYSTALLINE SIXGE1-X FILMS - DOPANT ACTIVATION AND SOLID SOLUBILITY, Journal of the Electrochemical Society, 144(11), 1997, pp. 3968-3973
MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT IN 4H-SIC USING A 2-BANDMODEL WITH MULTIPLE MINIMA
Authors: NILSSON HE SANNEMO U PETERSSON CS
Citation: He. Nilsson et al., MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT IN 4H-SIC USING A 2-BANDMODEL WITH MULTIPLE MINIMA, Journal of applied physics, 80(6), 1996, pp. 3365-3369
ON THE FORMATION OF INHOMOGENEITIES IN EPITAXIAL COSI2 LAYERS GROWN FROM THE INTERACTION OF CO TI BILAYERS WITH SI[100] SUBSTRATES/
Authors: CARDENAS J ZHANG SL SVENSSON BG PETERSSON CS
Citation: J. Cardenas et al., ON THE FORMATION OF INHOMOGENEITIES IN EPITAXIAL COSI2 LAYERS GROWN FROM THE INTERACTION OF CO TI BILAYERS WITH SI[100] SUBSTRATES/, Journal of applied physics, 80(2), 1996, pp. 762-768
ELECTRICAL CHARACTERIZATION AND PHYSICAL ANALYSIS OF EPITAXIAL COSI2 GROWN FROM THE SI[100] TI/CO SYSTEM/
Authors: HATZIKONSTANTINIDOU S WIKMAN P ZHANG SL PETERSSON CS
Citation: S. Hatzikonstantinidou et al., ELECTRICAL CHARACTERIZATION AND PHYSICAL ANALYSIS OF EPITAXIAL COSI2 GROWN FROM THE SI[100] TI/CO SYSTEM/, Journal of applied physics, 80(2), 1996, pp. 952-961
TEMPERATURE-DEPENDENCE OF THE BARRIER HEIGHT OF METAL-SEMICONDUCTOR CONTACTS ON 6H-SIC - COMMENT
Authors: FROJDH G PETERSSON CS
Citation: G. Frojdh et Cs. Petersson, TEMPERATURE-DEPENDENCE OF THE BARRIER HEIGHT OF METAL-SEMICONDUCTOR CONTACTS ON 6H-SIC - COMMENT, Journal of applied physics, 80(11), 1996, pp. 6570-6571
INVESTIGATION OF HOT-CARRIER TRANSPORT IN SILICON PERMEABLE BASE TRANSISTORS
Authors: NILSSON HE SANNEMO U PETERSSON CS
Citation: He. Nilsson et al., INVESTIGATION OF HOT-CARRIER TRANSPORT IN SILICON PERMEABLE BASE TRANSISTORS, I.E.E.E. transactions on electron devices, 43(6), 1996, pp. 924-931
ENHANCED FORMATION OF THE C54 PHASE OF TISI2 BY AN INTERPOSED LAYER OF MOLYBDENUM
Authors: MOUROUX A ZHANG SL KAPLAN W NYGREN S OSTLING M PETERSSON CS
Citation: A. Mouroux et al., ENHANCED FORMATION OF THE C54 PHASE OF TISI2 BY AN INTERPOSED LAYER OF MOLYBDENUM, Applied physics letters, 69(7), 1996, pp. 975-977
EXPERIMENTAL IDENTIFICATION OF THE OPTICAL PHONON OF COSI2 IN THE INFRARED
Authors: BOCELLI S GUIZZETTI G MARABELLI F THUNGSTROM G PETERSSON CS
Citation: S. Bocelli et al., EXPERIMENTAL IDENTIFICATION OF THE OPTICAL PHONON OF COSI2 IN THE INFRARED, Applied surface science, 91(1-4), 1995, pp. 30-33
ELECTRICAL AND MECHANICAL CHARACTERIZATION OF CHEMICAL-VAPOR-DEPOSITION OF TUNGSTEN ON SPUTTER-DEPOSITED TIN LAYERS
Authors: ZHANG SL PALMANS R PETERSSON CS MAEX K
Citation: Sl. Zhang et al., ELECTRICAL AND MECHANICAL CHARACTERIZATION OF CHEMICAL-VAPOR-DEPOSITION OF TUNGSTEN ON SPUTTER-DEPOSITED TIN LAYERS, Journal of applied physics, 78(12), 1995, pp. 7313-7322
INFLUENCE OF HYDROGEN ON CHEMICAL-VAPOR-DEPOSITION OF TUNGSTEN ON SPUTTER-DEPOSITED TIN LAYERS
Authors: ZHANG SL PALMANS R KEINONEN J PETERSSON CS MAEX K
Citation: Sl. Zhang et al., INFLUENCE OF HYDROGEN ON CHEMICAL-VAPOR-DEPOSITION OF TUNGSTEN ON SPUTTER-DEPOSITED TIN LAYERS, Applied physics letters, 67(20), 1995, pp. 2998-3000
ON THE FORMATION OF EPITAXIAL COSI2 FROM THE REACTION OF SI WITH A COTI BILAYER/
Authors: ZHANG SL CARDENAS J DHEURLE FM SVENSSON BG PETERSSON CS
Citation: Sl. Zhang et al., ON THE FORMATION OF EPITAXIAL COSI2 FROM THE REACTION OF SI WITH A COTI BILAYER/, Applied physics letters, 66(1), 1995, pp. 58-60
PROCESSING AND CHARACTERIZATION OF AN ETCHED GROOVE PERMEABLE BASE TRANSISTOR ON GH-SIC
Authors: FROJDH C THUNGSTROM G HATZIKONSTANTINIDOU S NILSSON HE PETERSSON CS
Citation: C. Frojdh et al., PROCESSING AND CHARACTERIZATION OF AN ETCHED GROOVE PERMEABLE BASE TRANSISTOR ON GH-SIC, Physica scripta. T, 54, 1994, pp. 56-59
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