Authors:
ZHURAVLEV KS
SHAMIRZAEV TS
YAKUSHEVA NA
PETRENKO IP
Citation: Ks. Zhuravlev et al., A NEW RECOMBINATION CENTER IN HEAVILY-DOPED GAAS ZN GROWN BY LIQUID-PHASE EPITAXY, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1057-1061
Authors:
SHAMIRZAEV TS
ZHURAVLEV KS
YAKUSHEVA NA
PETRENKO IP
Citation: Ts. Shamirzaev et al., NEW IMPURITY-INDUCED DEFECT IN HEAVILY ZINC-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY, Semiconductor science and technology (Print), 13(10), 1998, pp. 1123-1129
Authors:
GRITSENKO VA
SVITASHEVA SN
PETRENKO IP
NOVIKOV YN
MOROKOV YN
WONG H
KWOK RWM
CHAN RWM
Citation: Va. Gritsenko et al., CHARACTERIZATION OF THE SILICON NITRIDE-THERMAL OXIDE INTERFACE IN OXIDE-NITRIDE-OXIDE STRUCTURES BY ELS, XPS, ELLIPSOMETRY, AND NUMERICAL-SIMULATION, Microelectronics and reliability, 38(5), 1998, pp. 745-751
Authors:
GRITSENKO VA
MOROKOV YN
NOVIKOV YN
PETRENKO IP
SVITASHEVA SN
WONG H
Citation: Va. Gritsenko et al., ENRICHING OF THE SI3N4 - THERMAL OXIDE INTERFACE BY EXCESS SILICON INONO STRUCTURES, Microelectronic engineering, 36(1-4), 1997, pp. 123-124