Authors: ZHURAVLEV KS SHAMIRZAEV TS YAKUSHEVA NA PETRENKO IP

Citation: Ks. Zhuravlev et al., A NEW RECOMBINATION CENTER IN HEAVILY-DOPED GAAS ZN GROWN BY LIQUID-PHASE EPITAXY, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1057-1061

Authors: GALITSYN YG MANSUROV VG MARAHOVKA II PETRENKO IP

Citation: Yg. Galitsyn et al., COMMENSURATE AND INCOMMENSURATE INDIUM PHASES ON A (111)A INAS SURFACE, Semiconductors, 32(1), 1998, pp. 78-83

Authors: SHAMIRZAEV TS ZHURAVLEV KS YAKUSHEVA NA PETRENKO IP

Citation: Ts. Shamirzaev et al., NEW IMPURITY-INDUCED DEFECT IN HEAVILY ZINC-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY, Semiconductor science and technology (Print), 13(10), 1998, pp. 1123-1129

Authors: GRITSENKO VA SVITASHEVA SN PETRENKO IP NOVIKOV YN MOROKOV YN WONG H KWOK RWM CHAN RWM

Citation: Va. Gritsenko et al., CHARACTERIZATION OF THE SILICON NITRIDE-THERMAL OXIDE INTERFACE IN OXIDE-NITRIDE-OXIDE STRUCTURES BY ELS, XPS, ELLIPSOMETRY, AND NUMERICAL-SIMULATION, Microelectronics and reliability, 38(5), 1998, pp. 745-751

Authors: GRITSENKO VA PETRENKO IP SVITASHEVA SN WONG H

Citation: Va. Gritsenko et al., EXCESS SILICON AT THE SI(3)N4 SIO2 INTERFACE, Applied physics letters, 72(4), 1998, pp. 462-464

Authors: GRITSENKO VA MOROKOV YN NOVIKOV YN PETRENKO IP SVITASHEVA SN WONG H

Citation: Va. Gritsenko et al., ENRICHING OF THE SI3N4 - THERMAL OXIDE INTERFACE BY EXCESS SILICON INONO STRUCTURES, Microelectronic engineering, 36(1-4), 1997, pp. 123-124