Authors:
KIM D
LIBON IH
VOELKMANN C
PETROVAKOCH V
SHEN YR
Citation: D. Kim et al., MULTIPHOTON EXCITATIONS IN POROUS SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 48(1-2), 1997, pp. 103-107
Authors:
KIM D
LIBON IH
VOELKMANN C
SHEN YR
PETROVAKOCH V
Citation: D. Kim et al., MULTIPHOTON PHOTOLUMINESCENCE FROM GAN WITH TUNABLE PICOSECOND PULSES, Physical review. B, Condensed matter, 55(8), 1997, pp. 4907-4909
Authors:
LEBEDEV E
DITTRICH T
PETROVAKOCH V
KARG S
BRUTTING W
Citation: E. Lebedev et al., CHARGE-CARRIER MOBILITY IN POLY(P-PHENYLENEVINYLENE) STUDIED BY THE TIME-OF-FLIGHT TECHNIQUE, Applied physics letters, 71(18), 1997, pp. 2686-2688
Authors:
FISCHER T
PETROVAKOCH V
SHCHEGLOV K
BRANDT MS
KOCH F
Citation: T. Fischer et al., CONTINUOUSLY TUNABLE PHOTOLUMINESCENCE FROM SI-IMPLANTED AND THERMALLY ANNEALED SIO2-FILMS(), Thin solid films, 276(1-2), 1996, pp. 100-103
Citation: F. Koch et V. Petrovakoch, LIGHT FROM SI-NANOPARTICLE SYSTEMS - A COMPREHENSIVE VIEW, Journal of non-crystalline solids, 200, 1996, pp. 840-846
Citation: V. Petrovakoch et T. Muschik, THE RELATION BETWEEN THE VISIBLE AND THE INFRARED LUMINESCENCE BANDS IN POROUS SILICON - COMPARISON WITH AMORPHOUS SI ALLOYS, Thin solid films, 255(1-2), 1995, pp. 246-249
Citation: C. Zybill et V. Petrovakoch, LIGHT FROM SILICON-RENAISSANCE OF SILOXENE AND POLYSILANE, Angewandte Chemie, International Edition in English, 32(6), 1993, pp. 845-848
Authors:
MEYER BK
HOFMANN DM
STADLER W
PETROVAKOCH V
KOCH F
EMANUELSSON P
OMLING P
Citation: Bk. Meyer et al., PHOTOLUMINESCENCE AND OPTICALLY DETECTED MAGNETIC-RESONANCE INVESTIGATIONS ON POROUS SILICON, Journal of luminescence, 57(1-6), 1993, pp. 137-140
Authors:
METZGER H
FRANZ H
BINDER M
PEISL J
PETROVAKOCH V
Citation: H. Metzger et al., X-RAY-INVESTIGATION OF POROUS SILICON UNDER ANGLES OF GRAZING-INCIDENCE AND EXIT, Journal of luminescence, 57(1-6), 1993, pp. 201-204
Citation: F. Koch et al., THE LUMINESCENCE OF POROUS SI - THE CASE FOR THE SURFACE-STATE MECHANISM, Journal of luminescence, 57(1-6), 1993, pp. 271-281
Authors:
MEYER BK
HOFMANN DM
STADLER W
PETROVAKOCH V
KOCH F
OMLING P
EMANUELSSON P
Citation: Bk. Meyer et al., DEFECTS IN POROUS SILICON INVESTIGATED BY OPTICALLY DETECTED AND BY ELECTRON-PARAMAGNETIC-RESONANCE TECHNIQUES, Applied physics letters, 63(15), 1993, pp. 2120-2122