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Results:
1-14
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Results: 14
Authors:
VORONKOV VB
GOLUBEV VG
GORSHKOV NI
MEDVEDEV AV
PEVTSOV AB
SUGLOBOV DN
FEOKTISTOV NA
Citation: Vb. Voronkov et al., FILMS OF A-SI-H DOPED WITH ERBIUM FROM THE METALORGANIC COMPOUND ER(HFA)(3)ASTERISK-DME, EMITTING AT 1.54 MU-M, Technical physics letters, 24(7), 1998, pp. 502-503
Authors:
BOGOMOLOV VN
GOLUBEV VG
KARTENKO NF
KURDYUKOV DA
PEVTSOV AB
PROKOFEV AV
RATNIKOV VV
FEOKTISTOV NA
SHARENKOVA NV
Citation: Vn. Bogomolov et al., FABRICATION OF REGULAR 3-DIMENSIONAL LATTICES OF SUBMICRON SILICON CLUSTERS IN AN SIO2 OPAL MATRIX, Technical physics letters, 24(4), 1998, pp. 326-327
Authors:
GOLUBEV VG
MEDVEDEV AV
PEVTSOV AB
FEOKTISTOV NA
Citation: Vg. Golubev et al., MODIFIED METHOD OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF NANOCRYSTALLINE SILICON, Technical physics letters, 24(10), 1998, pp. 758-759
Authors:
VORONKOV VB
GOLUBEV VG
MEDVEDEV AV
PEVTSOV AB
FEOKTISTOV NA
GORSHKOV NI
SUGLOBOV DN
Citation: Vb. Voronkov et al., PHOTOLUMINESCENCE OF A-SI-H FILMS GROWN BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION AND DOPED WITH ERBIUM FROM THE METALLORGANIC COMPOUND ER(HFA)(3)CENTER-DOT-DME, Physics of the solid state, 40(8), 1998, pp. 1301-1304
Authors:
KOUGIA KV
PEVTSOV AB
Citation: Kv. Kougia et Ab. Pevtsov, LONG-TERM STRUCTURAL RELAXATION AND PHOTOINDUCED DEGRADATION IN A-SI-H, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1128-1130
Authors:
GOLUBEV VG
DAVYDOV VY
MEDVEDEV AV
PEVTSOV AB
FEOKTISTOV NA
Citation: Vg. Golubev et al., RAMAN-SCATTERING SPECTRA AND ELECTRICAL-CONDUCTIVITY OF THIN SILICON FILMS WITH A MIXED AMORPHOUS-NANOCRYSTALLINE PHASE-COMPOSITION - DETERMINATION OF THE NANOCRYSTALLINE VOLUME FRACTION, Physics of the solid state, 39(8), 1997, pp. 1197-1201
Authors:
FEOKTISTOV NA
PEVTSOV AB
KOSAREV AI
Citation: Na. Feoktistov et al., STUDY OF THE SURFACE RECOMBINATION IN P-I-N STRUCTURES BASED ON AMORPHOUS HYDROGENATED SILICON, Semiconductors, 30(7), 1996, pp. 702-705
Authors:
IVANOVA NL
FEOKTISTOV NA
CHAIKA AN
ONOKHOV AP
PEVTSOV AB
Citation: Nl. Ivanova et al., OPTICALLY ADDRESSED SPATIAL LIGHT-MODULATOR WITH HIGHLY SENSITIVE LAYER OF AMORPHOUS HYDROGENATED SILICON-CARBIDE, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 282, 1996, pp. 315-322
Authors:
IVANOVA NL
MOROZOVA LE
ONOKHOV AP
PEVTSOV AB
FEOKTISTOV NA
Citation: Nl. Ivanova et al., USE OF AMORPHOUS HYDRATED SILICON-CARBIDE (A-SI-C-H) LAYERS IN SPACE-TIME LIGHT MODULATORS, Pis'ma v Zurnal tehniceskoj fiziki, 22(4), 1996, pp. 7-11
Authors:
PEVTSOV AB
DAVYDOV VY
FEOKTISTOV NA
Citation: Ab. Pevtsov et al., NANOSCALE-CRYSTALLITE NUCLEATION AND GROWTH IN AMORPHOUS SOLIDS, Physical review. B, Condensed matter, 52(2), 1995, pp. 955-966
Authors:
FEOKTISTOV NA
FLORINSKII VY
MOROZOVA LE
PEVTSOV AB
Citation: Na. Feoktistov et al., AMORPHOUS SILICON-CARBON BASED P-I-N STRUCTURES FOR ELECTRON FLUX CONVERSION, International journal of electronics, 78(3), 1995, pp. 533-538
Authors:
PEVTSOV AB
ZHERZDEV AV
FEOKTISTOV NA
JUSKA G
MUSCHIK T
SCHWARZ R
Citation: Ab. Pevtsov et al., ELECTROLUMINESCENCE IN A-SI1-XCX-H P-I-N STRUCTURES, International journal of electronics, 78(2), 1995, pp. 289-295
Authors:
GOLUBEV VG
MOROZOVA LE
PEVTSOV AB
FEOKTISTOV NA
FLORINSKII VY
Citation: Vg. Golubev et al., COLLECTION OF NONEQUILIBRIUM CARRIERS GENERATED IN A-SI H AND A-SI/C/H STRUCTURES BY AN ELECTRON-BEAM/, Semiconductors, 28(3), 1994, pp. 274-277
SPECTRAL AND LOADING CHARACTERISTICS OF P -I-N TRANSDUCORS OF BETA-IRRADIATION ENERGY-BASED ON A-SIH
Authors:
FLORINSKII VY
FEOKTISTOV NA
PEVTSOV AB
KOSAREV AI
VINOGRADOV AY
PILATOV AG
MOROZOV LE
GOLOKOZ PP
CHERVINSKII VN
GANSHIN VM
PETRENKO NS
Citation: Vy. Florinskii et al., SPECTRAL AND LOADING CHARACTERISTICS OF P -I-N TRANSDUCORS OF BETA-IRRADIATION ENERGY-BASED ON A-SIH, Pis'ma v Zurnal tehniceskoj fiziki, 19(16), 1993, pp. 23-27
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