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Results: 1-8 |
Results: 8
SILICON PIN RADIATION DETECTORS WITH ON-CHIP FRONT-END JUNCTION FIELD-EFFECT TRANSISTORS
Authors: DALLABETTA GF VERZELLESI G BOSCARDIN M BOSISIO L PIGNATEL GU FERRARIO L ZEN M SONCINI G
Citation: Gf. Dallabetta et al., SILICON PIN RADIATION DETECTORS WITH ON-CHIP FRONT-END JUNCTION FIELD-EFFECT TRANSISTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 417(2-3), 1998, pp. 325-331
DEVELOPMENT OF A DETECTOR-COMPATIBLE JFET TECHNOLOGY ON HIGH-RESISTIVITY SILICON
Authors: DALLABETTA GF BOSCARDIN M PIGNATEL GU VERZELLESI G BOSISIO L FERRARIO L ZEN M SONCINI G
Citation: Gf. Dallabetta et al., DEVELOPMENT OF A DETECTOR-COMPATIBLE JFET TECHNOLOGY ON HIGH-RESISTIVITY SILICON, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 409(1-3), 1998, pp. 346-350
DESIGN AND OPTIMIZATION OF AN NPN SILICON BIPOLAR PHOTOTRANSISTOR FOROPTICAL POSITION ENCODERS
Authors: DALLABETTA GF PIGNATEL GU VERZELLESI G BELLUTTI P BOSCARDIN M FERRARIO L ZORZI N MAGLIONE A
Citation: Gf. Dallabetta et al., DESIGN AND OPTIMIZATION OF AN NPN SILICON BIPOLAR PHOTOTRANSISTOR FOROPTICAL POSITION ENCODERS, Microelectronics, 29(1-2), 1998, pp. 49-58
SI-PIN X-RAY-DETECTOR TECHNOLOGY
Authors: DALLABETTA GF PIGNATEL GU VERZELLESI G BOSCARDIN M
Citation: Gf. Dallabetta et al., SI-PIN X-RAY-DETECTOR TECHNOLOGY, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 395(3), 1997, pp. 344-348
DESIGN OF AN N-CHANNEL JFET ON HIGH-RESISTIVITY SILICON FOR RADIATION-DETECTOR ON-CHIP FRONT-END ELECTRONICS
Authors: DALLABETTA GF VERZELLESI G PIGNATEL GU AMON S BOSCARDIN M SONCINI G
Citation: Gf. Dallabetta et al., DESIGN OF AN N-CHANNEL JFET ON HIGH-RESISTIVITY SILICON FOR RADIATION-DETECTOR ON-CHIP FRONT-END ELECTRONICS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 365(2-3), 1995, pp. 473-479
LOW-TEMPERATURE CHARACTERIZATION OF COMPENSATED SILICON BOLOMETERS
Authors: PIGNATEL GU PEDROLLI F CAVALLERI A BONALDI M VITALE S
Citation: Gu. Pignatel et al., LOW-TEMPERATURE CHARACTERIZATION OF COMPENSATED SILICON BOLOMETERS, Physica. B, Condensed matter, 194, 1994, pp. 1183-1184
CHARACTERIZATION OF SILICON DIOXIDE AND PHOSPHOSILICATE GLASS DEPOSITED FILMS
Authors: ROJAS S ZANOTTI L BORGHESI A SASSELLA A PIGNATEL GU
Citation: S. Rojas et al., CHARACTERIZATION OF SILICON DIOXIDE AND PHOSPHOSILICATE GLASS DEPOSITED FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2081-2089
TECHNOLOGICAL ASPECTS CONCERNING THE REALIZATION OF ION-IMPLANTED SI-BOLOMETERS
Authors: LUI A MARGESIN B MAGLIONE A PIGNATEL GU
Citation: A. Lui et al., TECHNOLOGICAL ASPECTS CONCERNING THE REALIZATION OF ION-IMPLANTED SI-BOLOMETERS, Journal of low temperature physics, 93(3-4), 1993, pp. 331-336
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