Authors: QUINTANILLA L DUENAS S CASTAN E PINACHO R PELAEZ R BARBOLLA J MARTIN JM GONZALEZDIAZ G

Citation: L. Quintanilla et al., ELECTRICAL CHARACTERIZATION OF DEEP LEVELS EXISTING IN MG-SI-IMPLANTED AND MG-P-SI-IMPLANTED P(+)N INP JUNCTIONS, Semiconductor science and technology, 13(4), 1998, pp. 389-393

Authors: ENRIQUEZ L DUENAS S CASTAN E QUINTANILLA L PINACHO R BARBOLLA J

Citation: L. Enriquez et al., THERMAL EMISSION PROCESSES OF DX CENTERS IN ALXGA1-XAS-SI, Solid-state electronics, 41(1), 1997, pp. 103-109

Authors: DUENAS S PINACHO R CASTAN E QUINTANILLA L PELAEZ R BARBOLLA J

Citation: S. Duenas et al., DETAILED ELECTRICAL CHARACTERIZATION OF DX CENTERS IN SE-DOPED ALXGA1-XAS, Journal of applied physics, 82(9), 1997, pp. 4338-4345

Authors: QUINTANILLA L DUENAS S CASTAN E PINACHO R BARBOLLA J MARTIN JM GONZALEZDIAZ G

Citation: L. Quintanilla et al., DEEP LEVELS IN P(-N JUNCTIONS FABRICATED BY RAPID THERMAL ANNEALING OF MG OR MG())P IMPLANTED INP/, Journal of applied physics, 81(7), 1997, pp. 3143-3150

Authors: DUENAS S PELAEZ R CASTAN E PINACHO R QUINTANILLA L BARBOLLA J MARTIL I GONZALEZDIAZ G

Citation: S. Duenas et al., EXPERIMENTAL-OBSERVATION OF CONDUCTANCE TRANSIENTS IN AL SINX-H/SI METAL-INSULATOR-SEMICONDUCTOR STRUCTURES/, Applied physics letters, 71(6), 1997, pp. 826-828

Authors: QUINTANILA L DUENAS S CASTAN E PINACHO R PELAZ L BAILON L BARBOLLA J

Citation: L. Quintanila et al., DOPANT LEVEL FREEZE-OUT AND NONIDEAL EFFECTS IN 6H-SIC EPILAYER JUNCTIONS, Journal of applied physics, 79(1), 1996, pp. 310-315