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Results: 1-8 |
Results: 8
IONIC IMPLANTATION AT LOW-ENERGY - APPLICATION TO THE SHALLOW JUNCTION ACCOMPLISHMENT AND SURFACE FUNCTIONALIZATION
Authors: KAABI L GONTRAND C PINARD P BALLAND B REMAKI B GAMOUDI M GUILLAUD G
Citation: L. Kaabi et al., IONIC IMPLANTATION AT LOW-ENERGY - APPLICATION TO THE SHALLOW JUNCTION ACCOMPLISHMENT AND SURFACE FUNCTIONALIZATION, Synthetic metals, 90(3), 1997, pp. 217-221
ELECTRICAL AND PIEZORESISTIVE CHARACTERIZATION OF BORON-DOPED LPCVD POLYCRYSTALLINE SILICON UNDER RAPID THERMAL ANNEALING
Authors: LEBERRE M KLEIMANN P SEMMACHE B BARBIER D PINARD P
Citation: M. Leberre et al., ELECTRICAL AND PIEZORESISTIVE CHARACTERIZATION OF BORON-DOPED LPCVD POLYCRYSTALLINE SILICON UNDER RAPID THERMAL ANNEALING, Sensors and actuators. A, Physical, 54(1-3), 1996, pp. 700-703
RAPID THERMAL-PROCESSING OF PIEZORESISTIVE POLYCRYSTALLINE SILICON FILMS - AN INNOVATIVE TECHNOLOGY FOR LOW-COST PRESSURE SENSOR FABRICATION
Authors: SEMMACHE B KLEIMANN P LEBERRE M LEMITI M BARBIER D PINARD P
Citation: B. Semmache et al., RAPID THERMAL-PROCESSING OF PIEZORESISTIVE POLYCRYSTALLINE SILICON FILMS - AN INNOVATIVE TECHNOLOGY FOR LOW-COST PRESSURE SENSOR FABRICATION, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 76-81
PIEZORESISTANCE OF BORON-DOPED PECVD AND LPCVD POLYCRYSTALLINE SILICON FILMS
Authors: LEBERRE M LEMITI M BARBIER D PINARD P CALI J BUSTARRET E SICART J ROBERT JL
Citation: M. Leberre et al., PIEZORESISTANCE OF BORON-DOPED PECVD AND LPCVD POLYCRYSTALLINE SILICON FILMS, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 166-170
ELECTRON POWDER RIBBON POLYCRYSTALLINE SILICON PLATES USED FOR POROUSLAYER FABRICATION
Authors: KOLIC Y GAUTHIER R PEREZ MAG SIBAI A DUPUY JC PINARD P MGHAIETH R MAAREF H
Citation: Y. Kolic et al., ELECTRON POWDER RIBBON POLYCRYSTALLINE SILICON PLATES USED FOR POROUSLAYER FABRICATION, Thin solid films, 255(1-2), 1995, pp. 159-162
SILICON, A BASIC MATERIAL FOR MICROTECHNO LOGIES
Authors: ROBERT JL BRUYERE JC PINARD P
Citation: Jl. Robert et al., SILICON, A BASIC MATERIAL FOR MICROTECHNO LOGIES, Onde electrique, 74(2), 1994, pp. 10-13
ELECTRICAL AND STRUCTURAL-PROPERTIES OF RAPID THERMALLY ANNEALED BORON-DOPED SILICON FILMS DEPOSITED BY PLASMAS-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: JEANJEAN P SICART J SELLITTO P ROBERT JL BUSTARRET E GRIESHABER W CALI J LEBERRE M LEMITI M PINARD P CONEDERA V
Citation: P. Jeanjean et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF RAPID THERMALLY ANNEALED BORON-DOPED SILICON FILMS DEPOSITED BY PLASMAS-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 76(8), 1994, pp. 4682-4688
DEVELOPMENT OF A NEW CRYSTAL-GROWTH PROCESS USING A SEMICONDUCTOR POWDER AND REDUCING THE THERMAL-STRESSES
Authors: SOF S KOLIC Y GAUTHIER R ETIENNE S PINARD P
Citation: S. Sof et al., DEVELOPMENT OF A NEW CRYSTAL-GROWTH PROCESS USING A SEMICONDUCTOR POWDER AND REDUCING THE THERMAL-STRESSES, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 173(1-2), 1993, pp. 55-58
Risultati: 1-8 |