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Results: 1-14 |
Results: 14
DETERMINATION OF EXCESS CURRENT DUE TO IMPACT IONIZATION IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: POLICICCHIO I PECORA A CARLUCCIO R MARIUCCI L FORTUNATO G PLAIS F PRIBAT D
Citation: I. Policicchio et al., DETERMINATION OF EXCESS CURRENT DUE TO IMPACT IONIZATION IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Solid-state electronics, 42(4), 1998, pp. 613-618
COMBINED SOLID-PHASE CRYSTALLIZATION AND EXCIMER-LASER ANNEALING PROCESS FOR POLYSILICON THIN-FILM TRANSISTORS
Authors: PECORA A MARIUCCI L CARLUCCIO R FORTUNATO G LEGAGNEUX P PLAIS F REITA C PRIBAT D STOEMENOS J
Citation: A. Pecora et al., COMBINED SOLID-PHASE CRYSTALLIZATION AND EXCIMER-LASER ANNEALING PROCESS FOR POLYSILICON THIN-FILM TRANSISTORS, Physica status solidi. a, Applied research, 166(2), 1998, pp. 707-714
DEFECTS IN SOLID-PHASE AND LASER CRYSTALLIZED POLYSILICON THIN-FILM TRANSISTORS
Authors: PETINOT F PLAIS F MENCARAGLIA D LEGAGNEUX P REITA C HUET O PRIBAT D
Citation: F. Petinot et al., DEFECTS IN SOLID-PHASE AND LASER CRYSTALLIZED POLYSILICON THIN-FILM TRANSISTORS, Journal of non-crystalline solids, 230, 1998, pp. 1207-1212
ANALYSIS OF ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS UNDER STATIC AND DYNAMIC CONDITIONS
Authors: VALDINOCI M COLALONGO L BACCARANI G PECORA A POLICICCHIO I FORTUNATO G PLAIS F LEGAGNEUX P REITA C PRIBAT D
Citation: M. Valdinoci et al., ANALYSIS OF ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS UNDER STATIC AND DYNAMIC CONDITIONS, Solid-state electronics, 41(9), 1997, pp. 1363-1369
HOT-CARRIER-INDUCED MODIFICATIONS TO THE NOISE PERFORMANCE OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: GIOVANNINI S CARLUCCIO R MARIUCCI L PECORA A FORTUNATO G REITA C PLAIS F PRIBAT D
Citation: S. Giovannini et al., HOT-CARRIER-INDUCED MODIFICATIONS TO THE NOISE PERFORMANCE OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Applied physics letters, 71(9), 1997, pp. 1216-1218
NOISE PERFORMANCES IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS FABRICATED BY EXCIMER-LASER CRYSTALLIZATION
Authors: CARLUCCIO R CORRADETTI A FORTUNATO G REITA C LEGAGNEUX P PLAIS F PRIBAT D
Citation: R. Carluccio et al., NOISE PERFORMANCES IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS FABRICATED BY EXCIMER-LASER CRYSTALLIZATION, Applied physics letters, 71(5), 1997, pp. 578-580
CRYSTALLIZATION OF AMORPHOUS-SILICON USING AN EXCIMER-LASER
Authors: PRIBAT D LEGAGNEUX P PLAIS F PETINOT F HUET O REITA C
Citation: D. Pribat et al., CRYSTALLIZATION OF AMORPHOUS-SILICON USING AN EXCIMER-LASER, Annales de physique, 22, 1997, pp. 213-224
KINETICS OF INTERFACE STATE GENERATION INDUCED BY HOT CARRIERS IN N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: FORTUNATO G PECORA A POLICICCHIO I PLAIS F PRIBAT D
Citation: G. Fortunato et al., KINETICS OF INTERFACE STATE GENERATION INDUCED BY HOT CARRIERS IN N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, JPN J A P 1, 35(2B), 1996, pp. 1544-1547
KINETICS OF CRYSTALLIZATION OF AMORPHOUS AND MIXED-PHASE SILICON FILMS DEPOSITED BY PYROLYSIS OF DISILANE GAS AT VERY-LOW PRESSURE
Authors: KRETZ T PRIBAT D LEGAGNEUX P PLAIS F HUET O BISARO R
Citation: T. Kretz et al., KINETICS OF CRYSTALLIZATION OF AMORPHOUS AND MIXED-PHASE SILICON FILMS DEPOSITED BY PYROLYSIS OF DISILANE GAS AT VERY-LOW PRESSURE, JPN J A P 2, 34(6A), 1995, pp. 660-663
ELECTRON-MICROSCOPY AND ELECTRON CONDUCTA NCE MEASUREMENTS IN-SITU OFTHE CRYSTALLIZATION OF A-SI FILMS PRODUCED BY SILANE AND DISILANE PYROLYSIS WITH LPDVD (LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION) UNDER HIGH-PURITY CONDITIONS
Authors: KRETZ T PRIBAT D LEGAGNEUX P PLAIS F HUET O MAGIS M
Citation: T. Kretz et al., ELECTRON-MICROSCOPY AND ELECTRON CONDUCTA NCE MEASUREMENTS IN-SITU OFTHE CRYSTALLIZATION OF A-SI FILMS PRODUCED BY SILANE AND DISILANE PYROLYSIS WITH LPDVD (LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION) UNDER HIGH-PURITY CONDITIONS, Journal de physique. IV, 5(C3), 1995, pp. 291-296
LOW-TEMPERATURE POLYSILICON TFTS - A COMPARISON OF SOLID-PHASE AND LASER CRYSTALLIZATION
Authors: PLAIS F LEGAGNEUX P REITA C HUET O PETINOT F GODARD B STEHLE M FOGARASSY E
Citation: F. Plais et al., LOW-TEMPERATURE POLYSILICON TFTS - A COMPARISON OF SOLID-PHASE AND LASER CRYSTALLIZATION, Microelectronic engineering, 28(1-4), 1995, pp. 443-446
LEAKAGE CURRENT REDUCTION DUE TO HOT-CARRIER EFFECTS IN N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: TALLARIDA G PECORA A FORTUNATO G PLAIS F LEGAGNEUX P KRETZ T PRIBAT D
Citation: G. Tallarida et al., LEAKAGE CURRENT REDUCTION DUE TO HOT-CARRIER EFFECTS IN N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Journal of non-crystalline solids, 187, 1995, pp. 195-198
EVIDENCE OF CARRIER NUMBER FLUCTUATION AS ORIGIN OF 1 F NOISE IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS/
Authors: CORRADETTI A LEONI R CARLUCCIO R FORTUNATO G REITA C PLAIS F PRIBAT D
Citation: A. Corradetti et al., EVIDENCE OF CARRIER NUMBER FLUCTUATION AS ORIGIN OF 1 F NOISE IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS/, Applied physics letters, 67(12), 1995, pp. 1730-1732
LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON THIN-FILM TRANSISTORS
Authors: STROH RJ PLAIS F KRETZ T LEGAGNEUX P HUET O MAGIS M PRIBAT D JIANG N HUGON MC AGIUS B
Citation: Rj. Stroh et al., LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON THIN-FILM TRANSISTORS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 9-13
Risultati: 1-14 |