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Results: 251-268/268
Authors:
DOROZHKIN SI
KRAVCHENKO GV
HAUG RI
VONKLITZING K
PLOOG K
Citation: Si. Dorozhkin et al., CAPACITANCE SPECTROSCOPY OF THE FRACTIONAL QUANTUM HALL-EFFECT - TEMPERATURE-DEPENDENCE OF THE ENERGY-GAP, JETP letters, 58(11), 1993, pp. 834-838
Authors:
GRODNENSKII IM
RUDENKO AS
KAMAEV AY
KRASNOPEROV EP
HEITMANN D
VONKLITZING K
PLOOG K
Citation: Im. Grodnenskii et al., LOW-FREQUENCY MAGNETOPLASMA EXCITATIONS IN GAAS ALGAAS QUANTUM WIRES/, JETP letters, 58(1), 1993, pp. 60-65
Authors:
ROSSMANITH M
SYASSEN K
BOCKENHOFF E
PLOOG K
VONKLITZING K
Citation: M. Rossmanith et al., TUNNELING THROUGH ALXGA1-XAS SINGLE BARRIERS UNDER HYDROSTATIC-PRESSURE, Applied physics letters, 63(7), 1993, pp. 937-939
Authors:
BEVER T
VONKLITZING K
WIECK AD
PLOOG K
Citation: T. Bever et al., VELOCITY MODULATION IN FOCUSED-ION-BEAM WRITTEN IN-PLANE-GATE TRANSISTORS, Applied physics letters, 63(5), 1993, pp. 642-644
Authors:
HOLY V
TAPFER L
KOPPENSTEINER E
BAUER G
LAGE H
BRANDT O
PLOOG K
Citation: V. Holy et al., TRIPLE-CRYSTAL X-RAY-DIFFRACTOMETRY OF PERIODIC ARRAYS OF SEMICONDUCTOR QUANTUM WIRES, Applied physics letters, 63(23), 1993, pp. 3140-3142
Authors:
MEURER B
VIEREN JP
GULDNER Y
PLOOG K
Citation: B. Meurer et al., QUANTUM DOTS AS A TUNABLE MICROWAVE QUANTUM DETECTOR, Applied physics letters, 63(22), 1993, pp. 3063-3065
Authors:
DEKORSY T
KURZ H
ZHOU XQ
PLOOG K
Citation: T. Dekorsy et al., INVESTIGATION OF FIELD, CARRIER, AND COHERENT PHONON DYNAMICS IN LOW-TEMPERATURE-GROWN GAAS, Applied physics letters, 63(21), 1993, pp. 2899-2901
Authors:
JENICHEN B
PLOOG K
BRANDT O
Citation: B. Jenichen et al., DETERMINATION OF THE LATERAL PERIODICITY OF NANOMETER QUANTUM-DOT ARRAYS BY TRIPLE-CRYSTAL DIFFRACTOMETRY, Applied physics letters, 63(2), 1993, pp. 156-158
Authors:
WAGNER J
FISCHER A
PLOOG K
Citation: J. Wagner et al., RESONANT RAMAN-SCATTERING AND PHOTOLUMINESCENCE AT THE E(0)-BAND GAP OF CARBON-DOPED ALAS, Applied physics letters, 62(26), 1993, pp. 3482-3484
Authors:
POTHIER H
WEIS J
HAUG RJ
VONKLITZING K
PLOOG K
Citation: H. Pothier et al., REALIZATION OF AN IN-PLANE-GATE SINGLE-ELECTRON TRANSISTOR, Applied physics letters, 62(24), 1993, pp. 3174-3176
Authors:
LEDENTSOV NN
TSUKADA N
PLOOG K
Citation: Nn. Ledentsov et al., CARBON ACCEPTOR LUMINESCENCE IN TYPE-I GAAS ALAS ULTRATHIN-LAYER SUPERLATTICES/, Applied physics. A, Solids and surfaces, 54(3), 1992, pp. 261-264
Authors:
FELDMANN J
GROSSMANN P
STOLZ W
GOBEL E
PLOOG K
Citation: J. Feldmann et al., TRANSIENT-GRATING EXPERIMENTS FOR THE STUDY OF ELECTRON-HOLE SEPARATION IN AN ELECTRIC-FIELD, Semiconductor science and technology, 7(3B), 1992, pp. 130-132
Authors:
NUNNENKAMP J
COLLET JH
KLEBNICZKI J
KUHL J
PLOOG K
Citation: J. Nunnenkamp et al., SUBPICOSECOND STUDY OF BAND-EDGE ABSORPTION IN AL0.25GA0.75AS, Semiconductor science and technology, 7(3B), 1992, pp. 187-190
Authors:
CINGOLANI R
LAGE H
KALT H
TAPFER L
HEITMANN D
PLOOG K
Citation: R. Cingolani et al., TEMPORAL EVOLUTION OF THE ELECTRON-HOLE PLASMA RECOMBINATION IN QUANTUM WIRES, Semiconductor science and technology, 7(3B), 1992, pp. 287-288
Authors:
GRAHN HT
RUHLE WW
VONKLITZING K
PLOOG K
Citation: Ht. Grahn et al., PHOTOLUMINESCENCE SPECTROSCOPY OF HOT CARRIERS IN SUPERLATTICES INJECTED BY RESONANT TUNNELING, Semiconductor science and technology, 7(3B), 1992, pp. 409-412
Authors:
GONI AR
SYASSEN K
ZHANG Y
PLOOG K
CANTARERO A
CROS A
Citation: Ar. Goni et al., PRESSURE-DEPENDENCE OF THE EXCITON ABSORPTION AND THE ELECTRONIC SUBBAND STRUCTURE OF A GA0.47IN0.53AS AL0.48IN0.52AS MULTIPLE-QUANTUM-WELLSYSTEM/, Physical review. B, Condensed matter, 45(12), 1992, pp. 6809-6818
Authors:
GRAMBOW P
NIEDER J
HEITMANN D
VONKLITZING K
PLOOG K
Citation: P. Grambow et al., QUANTUM POINT CONTACTS PREPARED BY OPTICAL CONTACT LITHOGRAPHY, Semiconductor science and technology, 6(12), 1991, pp. 1178-1180
Authors:
DMOWSKI L
WISNIEWSKI P
SKIERBISZEWSKI C
SUSKI T
VANDERWEL PJ
SINGLETON J
KOSSUT J
PLOOG K
HARRIS JJ
Citation: L. Dmowski et al., HIGH-PRESSURE STUDIES OF ELECTRON-MOBILITY IN HEAVILY DOPED GAAS - FITTING OF THE ABSOLUTE VALUE, Semiconductor science and technology, 6(10), 1991, pp. 969-972