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Results: 1-8 |
Results: 8
IMPEDANCE ANALYSIS OF SI SIO2 STRUCTURES GRAFTED WITH BIOMOLECULES FOR THE ELABORATION OF AN IMMUNOSENSOR/
Authors: SCHYBERG C PLOSSU C BARBIER D JAFFREZICRENAULT N MARTELET C MAUPAS H SOUTEYRAND E CHARLES MH DELAIR T MANDRAND B
Citation: C. Schyberg et al., IMPEDANCE ANALYSIS OF SI SIO2 STRUCTURES GRAFTED WITH BIOMOLECULES FOR THE ELABORATION OF AN IMMUNOSENSOR/, Sensors and actuators. B, Chemical, 27(1-3), 1995, pp. 457-460
EFFECT OF (CO)-C-60 IRRADIATION AND FOWLER-NORDHEIM INJECTION ON MOS CAPACITORS WITH THIN PLASMA-NITRIDED GATE OXIDES
Authors: SEIGNEUR F AUTRAN JL PLOSSU C BALLAND B BADOT D STRABONI A
Citation: F. Seigneur et al., EFFECT OF (CO)-C-60 IRRADIATION AND FOWLER-NORDHEIM INJECTION ON MOS CAPACITORS WITH THIN PLASMA-NITRIDED GATE OXIDES, Microelectronic engineering, 28(1-4), 1995, pp. 345-348
A COMPARISON OF SI-SIO2 INTERFACE-TRAP PROPERTIES IN THIN-FILM TRANSISTORS WITH THERMAL AND PLASMA-NITRIDED OXIDES
Authors: AUTRAN JL PLOSSU C SEIGNEUR F BALLAND B STRABONI A
Citation: Jl. Autran et al., A COMPARISON OF SI-SIO2 INTERFACE-TRAP PROPERTIES IN THIN-FILM TRANSISTORS WITH THERMAL AND PLASMA-NITRIDED OXIDES, Journal of non-crystalline solids, 187, 1995, pp. 374-379
USE OF THE CHARGE-PUMPING TECHNIQUE TO UNDERSTAND NONUNIFORM N-CHANNEL MOSFET DEGRADATION
Authors: DJAHLI F AUTRAN JL PLOSSU C
Citation: F. Djahli et al., USE OF THE CHARGE-PUMPING TECHNIQUE TO UNDERSTAND NONUNIFORM N-CHANNEL MOSFET DEGRADATION, Materials science & engineering. B, Solid-state materials for advanced technology, 23(2), 1994, pp. 120-122
LOW-ENERGY (3-100 EV) ELECTRON-BOMBARDMENT-INDUCED NITRIDATION OF THIN SIO2-FILMS - PHYSICOCHEMICAL AND ELECTRICAL ANALYSES
Authors: GLACHANT A GARCIA V BALLAND B BUREAU JC PLOSSU C DUPUY JC STRABONI A
Citation: A. Glachant et al., LOW-ENERGY (3-100 EV) ELECTRON-BOMBARDMENT-INDUCED NITRIDATION OF THIN SIO2-FILMS - PHYSICOCHEMICAL AND ELECTRICAL ANALYSES, Thin solid films, 238(1), 1994, pp. 31-36
CHARACTERIZATION OF INTERFACE STATES IN S UBMICROMETER MOS-TRANSISTORS BY DIFFERENT CHARGE-PUMPING TECHNIQUES
Authors: AUTRAN JL SEIGNEUR F DELMAS J PLOSSU C BALLAND B
Citation: Jl. Autran et al., CHARACTERIZATION OF INTERFACE STATES IN S UBMICROMETER MOS-TRANSISTORS BY DIFFERENT CHARGE-PUMPING TECHNIQUES, Journal de physique. III, 3(10), 1993, pp. 1947-1961
NITRIDATION OF THIN SIO2-FILMS INDUCED BY LOW-ENERGY (3-100 EV) ELECTRON-BOMBARDMENT
Authors: GARCIA V GLACHANT A BUREAU JC BALLAND B PLOSSU C DUPUY JC STRABONI A
Citation: V. Garcia et al., NITRIDATION OF THIN SIO2-FILMS INDUCED BY LOW-ENERGY (3-100 EV) ELECTRON-BOMBARDMENT, Microelectronic engineering, 22(1-4), 1993, pp. 73-76
CHARACTERIZATION OF SI-SIO2 INTERFACE STATES - COMPARISON BETWEEN DIFFERENT CHARGE-PUMPING AND CAPACITANCE TECHNIQUES
Authors: AUTRAN JL SEIGNEUR F PLOSSU C BALLAND B
Citation: Jl. Autran et al., CHARACTERIZATION OF SI-SIO2 INTERFACE STATES - COMPARISON BETWEEN DIFFERENT CHARGE-PUMPING AND CAPACITANCE TECHNIQUES, Journal of applied physics, 74(6), 1993, pp. 3932-3935
Risultati: 1-8 |