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Results:
1-8
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Results: 8
Authors:
MNATSAKANOV TT
POMORTSEVA LI
SCHRODER D
SCHLOGL A
Citation: Tt. Mnatsakanov et al., CHOOSING PROPER APPROXIMATION FOR SEMICONDUCTOR-DEVICE ANALYTICAL MODELING AT LOW-TEMPERATURE, Journal de physique. IV, 8(P3), 1998, pp. 71-74
Authors:
MNATSAKANOV TT
POMORTSEVA LI
SHUMAN VB
Citation: Tt. Mnatsakanov et al., ELECTRON-HOLE SCATTERING IN P-TYPE SILICON WITH A LOW CHARGE-CARRIER INJECTION LEVEL, Semiconductors, 31(7), 1997, pp. 707-709
Authors:
MNATSAKANOV TT
POMORTSEVA LI
SHUMAN VB
Citation: Tt. Mnatsakanov et al., INVESTIGATION INTO THE EFFECT OF AUGER RECOMBINATION ON CHARGE-CARRIER TRANSPORT AND STATIC CHARACTERISTICS OF SILICON MULTILAYER STRUCTURES, Solid-state electronics, 41(12), 1997, pp. 1871-1880
Authors:
MNATSAKANOV TT
POMORTSEVA LI
SHUMAN VB
Citation: Tt. Mnatsakanov et al., STUDY ON FEASIBILITY OF MINORITY-CARRIER COMPLETE DRAG IN SILICON - NEW INVESTIGATION METHOD INTENDED FOR INDIRECT-GAP SEMICONDUCTORS, Journal de physique. IV, 6(C3), 1996, pp. 81-86
Authors:
KUZMIN VA
YURKOV SN
POMORTSEVA LI
Citation: Va. Kuzmin et al., ANALYSIS AND MODELING OF THE STATIC CHARA CTERISTICS OF BIPOLAR-TRANSISTORS, RADIOTEK EL, 41(7), 1996, pp. 870-875
Authors:
MNATSAKANOV TT
POMORTSEVA LI
SHUMAN VB
GUK EG
Citation: Tt. Mnatsakanov et al., PARAMETERS THAT CHARACTERIZE ELECTRON-HOLE SCATTERING IN SEMICONDUCTORS WHEN THE INJECTION LEVEL IS LOW, Semiconductors, 29(9), 1995, pp. 808-812
Authors:
MNATSAKANOV TT
GRESSEROV BN
POMORTSEVA LI
Citation: Tt. Mnatsakanov et al., INVESTIGATION OF THE EFFECT OF ELECTRON-HOLE SCATTERING ON CHARGE-CARRIER TRANSPORT IN SEMICONDUCTORS AND SEMICONDUCTOR-DEVICES UNDER LOW INJECTION CONDITIONS, Solid-state electronics, 38(1), 1995, pp. 225-233
Authors:
MNATSAKANOV TT
POMORTSEVA LI
YAKOVLEV DG
Citation: Tt. Mnatsakanov et al., ESTIMATE OF THE EFFECTIVE NARROWING OF THE BAND-GAP IN HEAVILY-DOPED LAYERS OF SILICON STRUCTURES, Semiconductors, 28(11), 1994, pp. 1059-1061
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1-8
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