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Results:
1-19
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Results: 19
Authors:
PONCHET A
LECORRE A
LHARIDON H
LAMBERT B
SALAUN S
ALQUIER D
LACOMBE D
DURAND L
Citation: A. Ponchet et al., THE EFFECT OF THE GROWTH PROCEDURE AND THE INAS AMOUNT ON THE FORMATION OF STRAIN-INDUCED ISLANDS IN THE INAS INP(001) SYSTEM/, Applied surface science, 123, 1998, pp. 751-756
Authors:
PONCHET A
LACOMBE D
DURAND L
ALQUIER D
CARDONNA JM
Citation: A. Ponchet et al., ELASTIC ENERGY OF STRAINED ISLANDS - CONTRIBUTION OF THE SUBSTRATE ASA FUNCTION OF THE ISLAND ASPECT RATIO AND INTER-ISLAND DISTANCE, Applied physics letters, 72(23), 1998, pp. 2984-2986
Authors:
PONCHET A
ROCHER A
OUGAZZADEN A
MIRCEA A
Citation: A. Ponchet et al., INASP GAINP STRAINED MULTILAYERS GROWN BY MOVPE ON (001)INP, (113)B AND (110)INP SUBSTRATES - THE ROLE OF THE SURFACE CHARACTERISTICS/, Microelectronics, 28(8-10), 1997, pp. 857-863
Authors:
LACOMBE D
PONCHET A
GERARD JM
CABROL O
Citation: D. Lacombe et al., STRUCTURAL STUDY OF INAS QUANTUM BOXES GROWN BY MOLECULAR-BEAM EPITAXY ON A (001)GAAS-ON-SI SUBSTRATE, Applied physics letters, 70(18), 1997, pp. 2398-2400
Authors:
PONCHET A
LECORRE A
LHARIDON H
LAMBERT B
SALAUN S
GROENEN J
CARLES R
Citation: A. Ponchet et al., STRUCTURAL ASPECTS OF THE GROWTH OF INAS ISLANDS ON INP SUBSTRATE, Solid-state electronics, 40(1-8), 1996, pp. 615-619
Authors:
GERARD JM
MARZIN JY
ZIMMERMANN G
PONCHET A
CABROL O
BARRIER D
JUSSERAND B
SERMAGE B
Citation: Jm. Gerard et al., INAS GAAS QUANTUM BOXES OBTAINED BY SELF-ORGANIZED GROWTH - INTRINSICELECTRONIC-PROPERTIES AND APPLICATIONS/, Solid-state electronics, 40(1-8), 1996, pp. 807-814
Authors:
GROENEN J
MLAYAH A
CARLES R
PONCHET A
LECORRE A
SALAUN S
Citation: J. Groenen et al., STRAIN IN INAS ISLANDS GROWN ON INP(001) ANALYZED BY RAMAN-SPECTROSCOPY, Applied physics letters, 69(7), 1996, pp. 943-945
Authors:
CLEROT F
LHARIDON H
LECORRE A
GODEFROY A
SALAUN S
PONCHET A
Citation: F. Clerot et al., SIMULATION AND PHOTOLUMINESCENCE CHARACTERIZATION OF TRANSVERSE ELECTRIC-TRANSVERSE MAGNETIC EMISSION OF STRAINED GA0.47IN0.53AS GA0.62IN0.38AS SUPERLATTICES/, Materials science & engineering. B, Solid-state materials for advanced technology, 31(3), 1995, pp. 293-297
Authors:
GARCIA BJ
FONTAINE C
RUHLE WW
COLLET J
PONCHET A
Citation: Bj. Garcia et al., GROWTH OPTIMIZATION AND OPTICAL-PROPERTIES OF GAAS-(GA,AL)AS QUANTUM-WELL STRUCTURES ON UV-OZONE PREPARED NOMINAL (111)B GAAS-SURFACES, Microelectronics, 26(8), 1995, pp. 775-781
Authors:
PONCHET A
LECORRE A
GODEFROY A
SALAUN S
POUDOULEC A
Citation: A. Ponchet et al., STABILITY OF (114) AND (114) FACETS IN III-V COMPOUNDS UNDER USUAL MBE CONDITIONS, Microelectronics, 26(8), 1995, pp. 783-788
Authors:
PONCHET A
LECORRE A
GODEFROY A
SALAUN S
POUDOULEC A
Citation: A. Ponchet et al., INFLUENCE OF STRESS AND SURFACE RECONSTRUCTION ON THE MORPHOLOGY OF TENSILE GAINAS GROWN ON INP(001) BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 153(3-4), 1995, pp. 71-80
Authors:
PONCHET A
ROCHER A
EMERY JY
STARCK C
GOLDSTEIN L
Citation: A. Ponchet et al., DIRECT MEASUREMENT OF LATERAL ELASTIC MODULATIONS IN A ZERO-NET STRAINED GAINASP INP MULTILAYER/, Journal of applied physics, 77(5), 1995, pp. 1977-1984
Authors:
PONCHET A
LECORRE A
LHARIDON H
LAMBERT B
SALAUN S
Citation: A. Ponchet et al., RELATIONSHIP BETWEEN SELF-ORGANIZATION AND SIZE OF INAS ISLANDS ON INP(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 67(13), 1995, pp. 1850-1852
Authors:
BENSAOULA AH
FREUNDLICH A
BENSAOULA A
ROSSIGNOL V
PONCHET A
Citation: Ah. Bensaoula et al., CHEMICAL BEAM EPITAXY OF STRAIN BALANCED GAP GAAS/INP/GAAS SUPERLATTICES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1110-1112
Authors:
MIRCEA A
OUGAZZADEN A
BOUADMA N
DEVAUX F
MARZIN JY
RAMDANE A
BARRAU J
PONCHET A
Citation: A. Mircea et al., STRAINED MULTIQUANTUM-WELL HETEROSTRUCTURES FOR LASERS, MODULATORS AND INTEGRATED OPTICAL-DEVICES AT 1.3-1.55MU-M, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 279-284
Authors:
PONCHET A
ROCHER A
OUGAZZADEN A
MIRCEA A
Citation: A. Ponchet et al., SELF-INDUCED LATERALLY MODULATED GAINP INASP STRUCTURE GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY/, Journal of applied physics, 75(12), 1994, pp. 7881-7883
Authors:
PONCHET A
ROCHER A
EMERY JY
STARCK C
GOLDSTEIN L
Citation: A. Ponchet et al., LATERAL THICKNESS MODULATIONS IN ALTERNATE TENSILE-COMPRESSIVE STRAINED GAINASP MULTILAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 241-243
Authors:
EMERY JY
STARCK C
GOLDSTEIN L
PONCHET A
ROCHER A
Citation: Jy. Emery et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF ALTERNATED TENSILE COMPRESSIVE STRAINED GAINASP MULTIPLE-QUANTUM WELLS EMITTING AT 1.5 MU-M, Journal of crystal growth, 127(1-4), 1993, pp. 241-245
Authors:
PONCHET A
ROCHER A
EMERY JY
STARCK C
GOLDSTEIN L
Citation: A. Ponchet et al., LATERAL MODULATIONS IN ZERO-NET-STRAINED GAINASP MULTILAYERS GROWN BYGAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of applied physics, 74(6), 1993, pp. 3778-3782
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