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Results:
1-17
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Results: 17
Authors:
SANDER A
POSSELT M
OBERLE K
BREDT W
Citation: A. Sander et al., SEROPREVALENCE OF ANTIBODIES TO BARTONELLA-HENSELAE IN PATIENTS WITH CAT-SCRATCH DISEASE AND IN HEALTHY CONTROLS - EVALUATION AND COMPARISON OF 2 COMMERCIAL SEROLOGICAL TESTS, Clinical and diagnostic laboratory immunology, 5(4), 1998, pp. 486-490
Authors:
MURTHY CS
POSSELT M
FEUDEL T
Citation: Cs. Murthy et al., PHYSICALLY-BASED MODELING OF 2-DIMENSIONAL AND 3-DIMENSIONAL IMPLANTATION PROFILES - INFLUENCE OF DAMAGE ACCUMULATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 440-446
Authors:
SCHMIDT B
POSSELT M
STRECKER N
FEUDEL T
Citation: B. Schmidt et al., ATOMISTIC SIMULATION OF ION-IMPLANTATION INTO 2D STRUCTURES, Computational materials science, 11(2), 1998, pp. 87-95
Authors:
KOGLER R
YANKOV RA
KASCHNY JR
POSSELT M
DANILIN AB
SKORUPA W
Citation: R. Kogler et al., SPATIAL-DISTRIBUTION OF DEFECTS IN ION-IMPLANTED AND ANNEALED SI - THE RP 2 EFFECT/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 142(4), 1998, pp. 493-502
Authors:
WANG X
CHARLAMOV V
KOLITSCH A
POSSELT M
TRUSHIN Y
MOLLER W
Citation: X. Wang et al., STUDY OF ION-BEAM-ASSISTED DEPOSITION OF AI AIN MULTILAYERS BY COMPARISON OF COMPUTER-SIMULATION AND EXPERIMENT/, Journal of physics. D, Applied physics (Print), 31(18), 1998, pp. 2241-2244
Authors:
POSSELT M
SCHMIDT B
MURTHY CS
FEUDEL T
SUZUKI K
Citation: M. Posselt et al., MODELING OF DAMAGE ACCUMULATION DURING ION-IMPLANTATION INTO SINGLE-CRYSTALLINE SILICON, Journal of the Electrochemical Society, 144(4), 1997, pp. 1495-1504
Authors:
MURTHY CS
POSSELT M
FREI T
Citation: Cs. Murthy et al., 3-DIMENSIONAL MODELING OF LOW-DOSE BF2-CRYSTALLINE SILICON( IMPLANTATION INTO SINGLE), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 278-282
Authors:
POSSELT M
Citation: M. Posselt, 3D MODELING OF ION-IMPLANTATION INTO CRYSTALLINE SILICON - INFLUENCE OF DAMAGE ACCUMULATION ON DOPANT PROFILES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 163-167
Authors:
LIU QKK
BIERSACK JP
POSSELT M
Citation: Qkk. Liu et al., COMPARISON OF CHANNELING TRAJECTORIES AND RANGES CALCULATED BY THE CONTINUUM POTENTIAL APPROXIMATION AND CRYSTAL-TRIM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 3-6
Authors:
POSSELT M
Citation: M. Posselt, DYNAMIC SIMULATION OF DAMAGE ACCUMULATION DURING IMPLANTATION OF BF2-IONS INTO CRYSTALLINE SILICON( MOLECULAR), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 167-172
Authors:
GARTNER K
STOCK D
WEBER B
BETZ G
HAUTALA M
HOBLER G
HOU M
SARITE S
ECKSTEIN W
JIMENEZRODRIGUEZ JJ
PEREZMARTIN AMC
ANDRIBET EP
KONOPLEV V
GRASMARTI A
POSSELT M
SHAPIRO MH
TOMBRELLO TA
URBASSEK HM
HENSEL H
YAMAMURA Y
TAKEUCHI W
Citation: K. Gartner et al., ROUND-ROBIN COMPUTER-SIMULATION OF ION TRANSMISSION THROUGH CRYSTALLINE LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 183-197
Authors:
POSSELT M
HEINIG KH
Citation: M. Posselt et Kh. Heinig, COMPARISON OF BC-SIMULATIONS AND MD-SIMULATIONS OF LOW-ENERGY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 236-241
Authors:
MATHAR RJ
POSSELT M
Citation: Rj. Mathar et M. Posselt, ELECTRONIC STOPPING OF HEAVY-IONS IN THE KANEKO MODEL, Physical review. B, Condensed matter, 51(22), 1995, pp. 15798-15807
Authors:
MATHAR RJ
POSSELT M
Citation: Rj. Mathar et M. Posselt, EFFECTIVE-CHARGE THEORY FOR THE ELECTRONIC STOPPING OF HEAVY-IONS IN SOLIDS - STRIPPING CRITERIA AND TARGET-ELECTRON MODELS, Physical review. B, Condensed matter, 51(1), 1995, pp. 107-116
Authors:
POSSELT M
Citation: M. Posselt, CRYSTAL-TRIM AND ITS APPLICATION TO INVESTIGATIONS ON CHANNELING EFFECTS DURING ION-IMPLANTATION, Radiation effects and defects in solids, 130, 1994, pp. 87-119
Authors:
POSSELT M
Citation: M. Posselt, CHANNELING EFFECTS AND DEFECT ACCUMULATION IN ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 90(1-4), 1994, pp. 373-377
Authors:
POSSELT M
Citation: M. Posselt, COMPUTER-SIMULATION OF CHANNELING IMPLANTATION AT HIGH AND MEDIUM ENERGIES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 28-32
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1-17
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