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Results:
1-7
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Results: 7
Authors:
DUCROQUET F
JACOVETTI G
REZZOUG K
ABABOU S
GUILLOT G
PRASEUTH JP
OLIVIERMARTIN F
GIRAUDET L
Citation: F. Ducroquet et al., DEEP TRAP CHARACTERIZATION AND CONDUCTION-BAND OFFSET DETERMINATION OF AL0.48IN0.52AS (GA0.7AL0.3)(0.48)IN0.52AS HETEROSTRUCTURES/, Materials science and technology, 13(11), 1997, pp. 971-973
Authors:
COHENJONATHAN C
GIRAUDET L
BONZO A
PRASEUTH JP
Citation: C. Cohenjonathan et al., WAVE-GUIDE ALINAS GAALINAS AVALANCHE PHOTODIODE WITH A GAIN-BANDWIDTHPRODUCT OVER 160GHZ/, Electronics Letters, 33(17), 1997, pp. 1492-1493
Authors:
TEMMAR A
PRASEUTH JP
PALMIER JF
SCAVENNEC A
Citation: A. Temmar et al., METAL-SEMICONDUCTOR-METAL (MSM) PHOTODIOD E ON INP SUBSTRATE, Journal de physique. III, 6(8), 1996, pp. 1059-1073
Authors:
SYLVESTRE A
ANIEL F
BOUCAUD P
JULIEN FH
CROZAT P
DELUSTRAC A
ADDE R
JIN Y
PRASEUTH JP
Citation: A. Sylvestre et al., LOW-TEMPERATURE ELECTROLUMINESCENCE SPECTROSCOPY OF HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP, Journal of applied physics, 80(1), 1996, pp. 464-469
Authors:
PRASEUTH JP
Citation: Jp. Praseuth, MOLECULAR-BEAM EPITAXY OF ALGAINAS ON PATTERNED INP SUBSTRATES FOR OPTOELECTRONIC APPLICATIONS, Microelectronics, 26(8), 1995, pp. 841
Authors:
HARMAND JC
PRASEUTH JP
IDIARTALHOR E
PALLA R
PELOUARD JL
QUILLEC M
Citation: Jc. Harmand et al., CONTINUOUS MOLECULAR-BEAM EPITAXY OF ARSENIDES AND PHOSPHIDES APPLIEDTO DEVICE STRUCTURES ON INP SUBSTRATES, Journal of crystal growth, 150(1-4), 1995, pp. 1292-1296
Authors:
CURY LA
BEERENS J
PRASEUTH JP
Citation: La. Cury et al., DEPENDENCE OF CONDUCTION-BAND EFFECTIVE-MASS ON QUATERNARY ALLOY COMPOSITION OF (IN0.52AL0.48AS)Z(IN0.53GA0.47AS)1-Z LATTICE-MATCHED TO INP, Applied physics letters, 63(13), 1993, pp. 1804-1806
Risultati:
1-7
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