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Results:
1-11
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Results: 11
Authors:
PRIETSCH M
Citation: M. Prietsch, BALLISTIC-ELECTRON-EMISSION MICROSCOPY (BEEM) - STUDIES OF METAL-SEMICONDUCTOR INTERFACES WITH NANOMETER RESOLUTION, Physics reports, 253(4), 1995, pp. 164-233
Authors:
SANCHEZ O
GARCIA JM
SEGOVIA P
ALVAREZ J
DEPARGA ALV
ORTEGA JE
PRIETSCH M
MIRANDA R
Citation: O. Sanchez et al., LATERAL CONFINEMENT OF SURFACE-STATES ON STEPPED CU(111), Physical review. B, Condensed matter, 52(11), 1995, pp. 7894-7897
Authors:
WEN HJ
PRIETSCH M
BAUER A
CUBERES MT
MANKE I
KAINDL G
Citation: Hj. Wen et al., P(+) DOPING OF SI BY AL DIFFUSION UPON ANNEALING AL N-SI(111)7X7/, Applied physics letters, 66(22), 1995, pp. 3010-3012
Authors:
CUBERES MT
BAUER A
WEN HJ
VANDRE D
PRIETSCH M
KAINDL G
Citation: Mt. Cuberes et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY ON THE AU N-SI(111)7X7 INTERFACE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2422-2428
Authors:
CUBERES MT
BAUER A
WEN HJ
PRIETSCH M
KAINDL G
Citation: Mt. Cuberes et al., PROBING THE CAF2 DENSITY-OF-STATES AT AU CAF2/N-SI(111) INTERFACES WITH PHOTOELECTRON-SPECTROSCOPY AND BALLISTIC-ELECTRON-EMISSION MICROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2646-2652
Authors:
SWANSTON DM
MCLEAN AB
MCILROY DN
HESKETT D
LUDEKE R
MUNEKATA H
PRIETSCH M
DINARDO NJ
Citation: Dm. Swanston et al., SURFACE LOCALIZED STATES ON INAS(110), Surface science, 312(3), 1994, pp. 361-368
Authors:
CUBERES MT
BAUER A
WEN HJ
PRIETSCH M
KAINDL G
Citation: Mt. Cuberes et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY STUDY OF THE AU SI(111)7X7 ANDAU/CAF2/SI(111)7X7 INTERFACES/, Applied physics letters, 64(17), 1994, pp. 2300-2302
Authors:
BAUER A
CUBERES MT
PRIETSCH M
KAINDL G
Citation: A. Bauer et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY AT METAL GAP(110) INTERFACES -ELECTRON-TRANSPORT AND SCHOTTKY-BARRIER HEIGHTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1584-1590
Authors:
MOLODTSOV SL
PRIETSCH M
LAUBSCHAT C
KAINDL G
FEDOROV AV
ADAMCHUK VK
Citation: Sl. Molodtsov et al., FORMATION OF THE HO CDSE(10 OVER-BAR 10) INTERFACE/, Physical review. B, Condensed matter, 48(24), 1993, pp. 17867-17871
Authors:
BAUER A
CUBERES MT
PRIETSCH M
KAINDL G
Citation: A. Bauer et al., QUANTITATIVE STUDY OF ELECTRON-TRANSPORT IN BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Physical review letters, 71(1), 1993, pp. 149-152
Authors:
SWANSTON DM
MCLEAN AB
MCILROY DN
HESKETT D
LUDEKE R
MUNEKATA H
PRIETSCH M
DINARDO NJ
Citation: Dm. Swanston et al., THE ELECTRONIC-STRUCTURE OF MOLECULAR-BEAM EPITAXY GROWN INAS (110), Canadian journal of physics, 70(10-11), 1992, pp. 1099-1103
Risultati:
1-11
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