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Results: 1-13 |
Results: 13
FEATURES OF THE ELECTRICAL COMPENSATION OF BISMUTH IMPURITIES IN PBSE
Authors: NEMOV SA GAVRIKOVA TA ZYKOV VA OSIPOV PA PROSHIN VI
Citation: Sa. Nemov et al., FEATURES OF THE ELECTRICAL COMPENSATION OF BISMUTH IMPURITIES IN PBSE, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 689-691
TRANSPORT PHENOMENA IN THE SOLID-SOLUTION (PB0.78SN0.22)(0.97)IN0.03TE IN THE HOPPING CONDUCTION REGION
Authors: NEMOV SA RAVICH YI PROSHIN VI ABAIDULINA TG
Citation: Sa. Nemov et al., TRANSPORT PHENOMENA IN THE SOLID-SOLUTION (PB0.78SN0.22)(0.97)IN0.03TE IN THE HOPPING CONDUCTION REGION, Semiconductors, 32(3), 1998, pp. 280-283
EFFECT OF IN DOPING ON THE KINETIC COEFFICIENTS IN SOLID-SOLUTIONS OFTHE SYSTEM (PBZSN1-Z)(0.95)GE0.05TE
Authors: NEMOV SA PROSHIN VI NAKHMANSON SM
Citation: Sa. Nemov et al., EFFECT OF IN DOPING ON THE KINETIC COEFFICIENTS IN SOLID-SOLUTIONS OFTHE SYSTEM (PBZSN1-Z)(0.95)GE0.05TE, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1062-1064
INFLUENCE OF QUASI-LOCAL STATES OF IN ON DEFECT FORMATION IN PBTE
Authors: NEMOV SA PROSHIN VI ABAIDULINA TG
Citation: Sa. Nemov et al., INFLUENCE OF QUASI-LOCAL STATES OF IN ON DEFECT FORMATION IN PBTE, Semiconductors, 30(7), 1996, pp. 676-679
EFFECT OF IN ADDITIONS ON THE ELECTRICAL-PROPERTIES OF SN0.8GE(0.2)TETHIN-FILMS OBTAINED BY LASER SPUTTERING
Authors: NEMOV SA MUSIKHIN SF PROSHIN VI
Citation: Sa. Nemov et al., EFFECT OF IN ADDITIONS ON THE ELECTRICAL-PROPERTIES OF SN0.8GE(0.2)TETHIN-FILMS OBTAINED BY LASER SPUTTERING, Semiconductors, 30(2), 1996, pp. 179-180
THERMOELECTRIC-POWER AND ACTIVATION-ENERGY FOR HOPPING CONDUCTIVITY IN PB0.78SN0.22TE SOLID-SOLUTIONS WITH HIGH IN CONTENT
Authors: NEMOV SA PROSHIN VI RAVICH YI
Citation: Sa. Nemov et al., THERMOELECTRIC-POWER AND ACTIVATION-ENERGY FOR HOPPING CONDUCTIVITY IN PB0.78SN0.22TE SOLID-SOLUTIONS WITH HIGH IN CONTENT, Semiconductors, 30(12), 1996, pp. 1128-1129
SEEBECK COEFFICIENT AND ELECTRON-ENERGY BAND IN (PB0.78SN0.22)(0.97)IN0.03TE SOLID-SOLUTIONS WITH ADDITIONAL DOPING IN THE RANGE OF THE HOPPING CONDUCTIVITY
Authors: ABAIDULINA TG NEMOV SA PROSHIN VI RAVICH YI
Citation: Tg. Abaidulina et al., SEEBECK COEFFICIENT AND ELECTRON-ENERGY BAND IN (PB0.78SN0.22)(0.97)IN0.03TE SOLID-SOLUTIONS WITH ADDITIONAL DOPING IN THE RANGE OF THE HOPPING CONDUCTIVITY, Semiconductors, 30(12), 1996, pp. 1133-1134
HOPPING CONDUCTION VIA HIGHLY LOCALIZED IMPURITY STATES OF INDIUM IN PB0.78SN0.22TE SOLID-SOLUTIONS
Authors: RAVICH YI NEMOV SA PROSHIN VI
Citation: Yi. Ravich et al., HOPPING CONDUCTION VIA HIGHLY LOCALIZED IMPURITY STATES OF INDIUM IN PB0.78SN0.22TE SOLID-SOLUTIONS, Semiconductors, 29(8), 1995, pp. 754-756
SUPERCONDUCTING AND ELECTROPHYSICAL PROPE RTIES OF SN1-XGEXTE-IN THIN-FILMS IN SOLID-SOLUTIONS
Authors: NEMOV SA MUSIKHIN SF POPOV DI PROSHIN VI SHAMSHUR DV
Citation: Sa. Nemov et al., SUPERCONDUCTING AND ELECTROPHYSICAL PROPE RTIES OF SN1-XGEXTE-IN THIN-FILMS IN SOLID-SOLUTIONS, Fizika tverdogo tela, 37(11), 1995, pp. 3366-3373
EFFECT OF GE ADMIXTURES ON THE COMPONENT DISTRIBUTION AND SUPERCONDUCTING TRANSITION IN SN1-ZPBZTE-IN FILMS
Authors: NEMOV SA MUSIKHIN SF PARFENEV RV SVETLOV VN POPOV DN PROSHIN VI SHAMSHUR DV
Citation: Sa. Nemov et al., EFFECT OF GE ADMIXTURES ON THE COMPONENT DISTRIBUTION AND SUPERCONDUCTING TRANSITION IN SN1-ZPBZTE-IN FILMS, Fizika tverdogo tela, 37(11), 1995, pp. 3523-3525
SELF-COMPENSATION OF A DONOR IMPURITY BY NEUTRAL COMPLEXES IN BISMUTH-DOPED LEAD-TELLURIDE
Authors: RAVICH YI NEMOV SA PROSHIN VI
Citation: Yi. Ravich et al., SELF-COMPENSATION OF A DONOR IMPURITY BY NEUTRAL COMPLEXES IN BISMUTH-DOPED LEAD-TELLURIDE, Semiconductors, 28(2), 1994, pp. 163-165
ELECTRICAL-PROPERTIES OF (SN0.8GE0.2)1-XINXTE FILMS FORMED BY A LASER-EVAPORATION METHOD
Authors: MUSIKHIN SF NEMOV SA PROSHIN VI SEMIN IE SHAMSHUR DV BEREZIN AV IMAMKULIEV SD
Citation: Sf. Musikhin et al., ELECTRICAL-PROPERTIES OF (SN0.8GE0.2)1-XINXTE FILMS FORMED BY A LASER-EVAPORATION METHOD, Semiconductors, 27(3), 1993, pp. 288-290
TRANSPORT PHENOMENA IN PB0.78SN0.22TE WITH HIGH IN IMPURITY CONCENTRATIONS
Authors: NEMOV SA RAVICH YI BEREZIN AV GASUMYANTS VE ZHITINSKAYA MK PROSHIN VI
Citation: Sa. Nemov et al., TRANSPORT PHENOMENA IN PB0.78SN0.22TE WITH HIGH IN IMPURITY CONCENTRATIONS, Semiconductors, 27(2), 1993, pp. 165-168
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