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Results: 1-18 |
Results: 18
Strain relaxation in Ga1-xInxN thin layers grown on GaN sublayers
Authors: Zielinska-Rohozinska, E Gronkowski, J Pakula, K Majer, M Regulska, M Nowicki, L
Citation: E. Zielinska-rohozinska et al., Strain relaxation in Ga1-xInxN thin layers grown on GaN sublayers, J ALLOY COM, 328(1-2), 2001, pp. 199-205
Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures
Authors: Godlewski, M Goldys, EM Butcher, KSA Phillips, MR Pakula, K Baranowski, JM
Citation: M. Godlewski et al., Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures, PHYS ST S-B, 228(1), 2001, pp. 179-182
Extended x-ray absorption fine structure and photoluminescence study of Er-implanted GaN films
Authors: Wruck, D Lorenz, K Vianden, R Reinhold, B Mahnke, HE Baranowski, JM Pakula, K Parthier, L Henneberger, F
Citation: D. Wruck et al., Extended x-ray absorption fine structure and photoluminescence study of Er-implanted GaN films, SEMIC SCI T, 16(11), 2001, pp. L77-L80
X-ray diffraction study of composition inhomogeneities in Ga1-xInxN thin layers
Authors: Zielinska-Rohozinska, E Gronkowski, J Regulska, M Majer, M Pakula, K
Citation: E. Zielinska-rohozinska et al., X-ray diffraction study of composition inhomogeneities in Ga1-xInxN thin layers, CRYST RES T, 36(8-10), 2001, pp. 903-910
Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaNbuffer layer
Authors: Godlewski, M Goldys, EM Phillips, MR Pakula, K Baranowski, JM
Citation: M. Godlewski et al., Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaNbuffer layer, APPL SURF S, 177(1-2), 2001, pp. 22-31
Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers - art. no. 045205
Authors: Oila, J Ranki, V Kivioja, J Saarinen, K Hautojarvi, P Likonen, J Baranowski, JM Pakula, K Suski, T Leszczynski, M Grzegory, I
Citation: J. Oila et al., Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers - art. no. 045205, PHYS REV B, 6304(4), 2001, pp. 5205
Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarizedlight
Authors: Clerjaud, B Cote, D Lebkiri, A Naud, C Baranowski, JM Pakula, K Wasik, D Suski, T
Citation: B. Clerjaud et al., Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarizedlight, PHYS REV B, 61(12), 2000, pp. 8238-8241
Characterization of InGaN/GaN heterostructures by means of RBS/channeling
Authors: Nowicki, L Ratajczak, R Stonert, A Turos, A Baranowski, JM Banasik, R Pakula, K
Citation: L. Nowicki et al., Characterization of InGaN/GaN heterostructures by means of RBS/channeling, NUCL INST B, 161, 2000, pp. 539-543
Transportation in MOCVD of traces of oxygenated aluminum and gallium organometallics
Authors: Starowieyski, KB Kaczorek, M Pakula, K
Citation: Kb. Starowieyski et al., Transportation in MOCVD of traces of oxygenated aluminum and gallium organometallics, J ORGMET CH, 601(1), 2000, pp. 133-137
Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers
Authors: Neu, G Teisseire, M Frayssinet, E Knap, W Sadowski, ML Witowski, AM Pakula, K Leszczynski, M Prystawko, P
Citation: G. Neu et al., Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers, APPL PHYS L, 77(9), 2000, pp. 1348-1350
Polarised magnetoluminescence of excitons in homoepitaxial GaN layers
Authors: Wysmolek, A Potemski, M Stepniewski, R Lusakowski, J Pakula, K Baranowski, JM Martinez, G Wyder, P Grzegory, I Porowski, S
Citation: A. Wysmolek et al., Polarised magnetoluminescence of excitons in homoepitaxial GaN layers, PHYS ST S-B, 216(1), 1999, pp. 11-15
Emission due to exciton scattering by LO-phonons in gallium nitride
Authors: Wojdak, M Wysmolek, A Pakula, K Baranowski, JM
Citation: M. Wojdak et al., Emission due to exciton scattering by LO-phonons in gallium nitride, PHYS ST S-B, 216(1), 1999, pp. 95-99
Dislocation structure of growth hillocks in homoepitaxial GaN
Authors: Nowak, G Pakula, K Grzegory, I Weyher, JL Porowski, S
Citation: G. Nowak et al., Dislocation structure of growth hillocks in homoepitaxial GaN, PHYS ST S-B, 216(1), 1999, pp. 649-654
Symmetry of excitons in GaN
Authors: Stepniewski, R Potemski, M Wysmolek, A Pakula, K Baranowski, JM Lusakowski, J Grzegory, I Porowski, S Martinez, G Wyder, P
Citation: R. Stepniewski et al., Symmetry of excitons in GaN, PHYS REV B, 60(7), 1999, pp. 4438-4441
Localized vibrational modes of carbon-hydrogen complexes in GaN
Authors: Manasreh, MO Baranowski, JM Pakula, K Jiang, HX Lin, JY
Citation: Mo. Manasreh et al., Localized vibrational modes of carbon-hydrogen complexes in GaN, APPL PHYS L, 75(5), 1999, pp. 659-661
Electron effective mass in hexagonal GaN
Authors: Witowski, AM Pakula, K Baranowski, JM Sadowski, ML Wyder, P
Citation: Am. Witowski et al., Electron effective mass in hexagonal GaN, APPL PHYS L, 75(26), 1999, pp. 4154-4155
Impurity-related luminescence of homoepitaxial GaN studied with high magnetic fields
Authors: Stepniewski, R Wysmolek, A Potemski, M Lusakowski, J Korona, K Pakula, K Baranowski, JM Martinez, G Wyder, P Grzegory, I Porowski, S
Citation: R. Stepniewski et al., Impurity-related luminescence of homoepitaxial GaN studied with high magnetic fields, PHYS ST S-B, 210(2), 1998, pp. 373-383
Far-infrared magnetospectroscopy of shallow donors in GaN
Authors: Witowski, AM Sadowski, ML Pakula, K Wyder, P
Citation: Am. Witowski et al., Far-infrared magnetospectroscopy of shallow donors in GaN, PHYS ST S-B, 210(2), 1998, pp. 385-388
Risultati: 1-18 |