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Results:
1-10
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Results: 10
Authors:
Gueorguiev, YM
Kogler, R
Peeva, A
Panknin, D
Mucklich, A
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., Trans-projected-range effect in proximity gettering of impurities in silicon, VACUUM, 62(2-3), 2001, pp. 309-313
Liquid metal ion source-produced germanium ions for maskless ion implantation (vol 34, pg L11, 2001)
Authors:
Ganetsos, T
Aidinis, C
Bischoff, L
Mair, GLR
Teichert, J
Panknin, D
Papadopoulos, I
Citation: T. Ganetsos et al., Liquid metal ion source-produced germanium ions for maskless ion implantation (vol 34, pg L11, 2001), J PHYS D, 34(5), 2001, pp. 839-839
Authors:
Ganetsos, T
Aidinis, C
Bischoff, L
Mair, GLR
Teichert, J
Panknin, D
Papadopoulos, I
Citation: T. Ganetsos et al., Liquid metal ion source-produced germanium ions for maskless ion implantation, J PHYS D, 34(3), 2001, pp. L11-L13
Authors:
Rebien, M
Henrion, W
Stauss, P
Diesner, K
Panknin, D
Citation: M. Rebien et al., Optical investigations of beta-FeSi2 with and without Cr addition, J APPL PHYS, 90(10), 2001, pp. 5018-5026
Authors:
Panknin, D
Wirth, H
Mucklich, A
Skorupa, W
Citation: D. Panknin et al., Electrical and microstructural properties of highly boron-implantation doped 6H-SiC, J APPL PHYS, 89(6), 2001, pp. 3162-3167
Authors:
Gueorguiev, YM
Kogler, R
Peeva, K
Mucklich, A
Panknin, D
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., Trans-projected-range gettering of copper in high-energy ion-implanted silicon, J APPL PHYS, 88(11), 2000, pp. 6934-6936
Authors:
Gueorguiev, YM
Kogler, R
Peeva, A
Mucklich, A
Panknin, D
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., High-energy ion-implantation-induced gettering of copper in silicon beyondthe projected ion range: The trans-projected-range effect, J APPL PHYS, 88(10), 2000, pp. 5645-5652
Authors:
Panknin, D
Wirth, H
Mucklich, A
Skorupa, W
Citation: D. Panknin et al., Correlation of electrical and microstructural properties after high dose aluminium implantation into 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 363-367
Authors:
Gueorguiev, YM
Kogler, R
Peeva, A
Panknin, D
Mucklich, A
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., Impurity gettering by high-energy ion implantation in silicon beyond the projected range, APPL PHYS L, 75(22), 1999, pp. 3467-3469
Authors:
Wirth, H
Panknin, D
Skorupa, W
Niemann, E
Citation: H. Wirth et al., Efficient p-type doping of 6H-SiC: Flash-lamp annealing after aluminum implantation, APPL PHYS L, 74(7), 1999, pp. 979-981
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