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Results:
1-7
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Results: 7
Authors:
Nikolaidis, T
Papadas, C
Citation: T. Nikolaidis et C. Papadas, A novel SCR ESD protection for triple well CMOS technologies, IEEE ELEC D, 22(4), 2001, pp. 185-187
Authors:
Kamoulakos, G
McCarty, D
Papadas, C
Arapoyanni, A
Citation: G. Kamoulakos et al., Impact of the S/D extension doping profile on the psi-cell concept, IEEE ELEC D, 21(12), 2000, pp. 596-597
Authors:
Ghibaudo, G
Pananakakis, G
Kies, R
Vincent, E
Papadas, C
Citation: G. Ghibaudo et al., Accelerated dielectric breakdown and wear out standard testing methods andstructures for reliability evaluation of thin oxides, MICROEL REL, 39(5), 1999, pp. 597-613
Authors:
Kamoulakos, G
Kelaidis, C
Papadas, C
Vincent, E
Bruyere, S
Ghibaudo, G
Pananakakis, G
Mortini, P
Ghidini, G
Citation: G. Kamoulakos et al., Unified model for breakdown in thin and ultrathin gate oxides (12-5 nm), J APPL PHYS, 86(9), 1999, pp. 5131-5140
Authors:
Nikolaidis, T
Papadas, C
Citation: T. Nikolaidis et C. Papadas, ESD production for deep submicron triple well CMOS technologies, ELECTR LETT, 35(23), 1999, pp. 2025-2027
Authors:
Moisiadis, Y
Bouras, I
Efthymiou, A
Papadas, C
Citation: Y. Moisiadis et al., Fast 1V bootstrapped inverter suitable for standard CMOS technologies, ELECTR LETT, 35(2), 1999, pp. 109-111
Authors:
Moisiadis, Y
Bouras, I
Papadas, C
Schoellkopf, JP
Citation: Y. Moisiadis et al., Transient self back-biased buffer for low-voltage high-performance applications in standard CMOS technologies, ELECTR LETT, 35(2), 1999, pp. 112-113
Risultati:
1-7
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