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Results: 1-20 |
Results: 20
Photoluminescence investigation of superlattice ordering in organometallicvapour phase epitaxy grown InGaP layers
Authors: Longo, M Parisini, A Tarricone, L Toni, L Kudela, R
Citation: M. Longo et al., Photoluminescence investigation of superlattice ordering in organometallicvapour phase epitaxy grown InGaP layers, MAT SCI E B, 86(2), 2001, pp. 157-164
Electronic structure and vertical transport in random dimer GaAs-AlxGa1-xAs superlattices - art. no. 165321
Authors: Parisini, A Tarricone, L Bellani, V Parravicini, GB Diez, E Dominguez-Adame, F Hey, R
Citation: A. Parisini et al., Electronic structure and vertical transport in random dimer GaAs-AlxGa1-xAs superlattices - art. no. 165321, PHYS REV B, 6316(16), 2001, pp. 5321
Structural and electronic properties of ZnSe/AlAs heterostructures - art. no. 155312
Authors: Rubini, S Milocco, E Sorba, L Pelucchi, E Franciosi, A Garulli, A Parisini, A Zhuang, Y Bauer, G
Citation: S. Rubini et al., Structural and electronic properties of ZnSe/AlAs heterostructures - art. no. 155312, PHYS REV B, 6315(15), 2001, pp. 5312
Influence of the electrolyte viscosity on the structural features of porous silicon
Authors: Servidori, M Ferrero, C Lequien, S Milita, S Parisini, A Romestain, R Sama, S Setzu, S Thiaudiere, D
Citation: M. Servidori et al., Influence of the electrolyte viscosity on the structural features of porous silicon, SOL ST COMM, 118(2), 2001, pp. 85-90
In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells
Authors: Ghezzi, C Cioce, B Magnanini, R Parisini, A
Citation: C. Ghezzi et al., In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells, J APPL PHYS, 90(10), 2001, pp. 5166-5170
Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures
Authors: Bonanni, B Pelucchi, E Rubini, S Orani, D Franciosi, A Garulli, A Parisini, A
Citation: B. Bonanni et al., Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures, APPL PHYS L, 78(4), 2001, pp. 434-436
Superlattices as characterisation tool for the beginning of PS formation
Authors: Midellino, D Lerondel, G Parisini, A Rossi, AM Boarino, L Amato, G
Citation: D. Midellino et al., Superlattices as characterisation tool for the beginning of PS formation, J POROUS MA, 7(1-3), 2000, pp. 373-376
Structural characterization of Ar+-ion-amorphized 6H-SiC wafers annealed at 1100 degrees C in N-2 or wet O-2 ambient
Authors: Nipoti, R Parisini, A
Citation: R. Nipoti et A. Parisini, Structural characterization of Ar+-ion-amorphized 6H-SiC wafers annealed at 1100 degrees C in N-2 or wet O-2 ambient, PHIL MAG B, 80(4), 2000, pp. 647-659
ZnSe/CdTe/ZnSe heterostructures
Authors: Rubini, S Bonanni, B Pelucchi, E Franciosi, A Garulli, A Parisini, A Zhuang, Y Bauer, G Holy, V
Citation: S. Rubini et al., ZnSe/CdTe/ZnSe heterostructures, J VAC SCI B, 18(4), 2000, pp. 2263-2270
TEM characterisation of porous silicon
Authors: Parisini, A Angelucci, R Dori, L Poggi, A Maccagnani, P Cardinali, GC Amato, G Lerondel, G Midellino, D
Citation: A. Parisini et al., TEM characterisation of porous silicon, MICRON, 31(3), 2000, pp. 223-230
Low dimensional porous silicon superlattices
Authors: Amato, G Boarino, L Rossi, AM Lerondel, G Parisini, A
Citation: G. Amato et al., Low dimensional porous silicon superlattices, MAT SCI E B, 69, 2000, pp. 48-52
Porous silicon nanocracking
Authors: Lerondel, G Amato, G Parisini, A Boarino, L
Citation: G. Lerondel et al., Porous silicon nanocracking, MAT SCI E B, 69, 2000, pp. 161-166
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE
Authors: Attolini, G Bocchi, C Germini, F Pelosi, C Parisini, A Tarricone, L Kudela, R Hasenohrl, S
Citation: G. Attolini et al., Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE, MATER CH PH, 66(2-3), 2000, pp. 246-252
Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells
Authors: Bottazzi, C Parisini, A Tarricone, L Magnanini, R Baraldi, A
Citation: C. Bottazzi et al., Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells, PHYS REV B, 62(4), 2000, pp. 2731-2736
Damage profiles in high-energy As implanted Si
Authors: Lulli, G Bianconi, M Parisini, A Sama, S Servidori, M
Citation: G. Lulli et al., Damage profiles in high-energy As implanted Si, J APPL PHYS, 88(7), 2000, pp. 3993-3999
Gas sensors for air quality monitoring: realisation and characterisation of undoped and noble metal-doped SnO2 thin sensing films deposited by the pulsed laser ablation
Authors: Nicoletti, S Dori, L Cardinali, GC Parisini, A
Citation: S. Nicoletti et al., Gas sensors for air quality monitoring: realisation and characterisation of undoped and noble metal-doped SnO2 thin sensing films deposited by the pulsed laser ablation, SENS ACTU-B, 60(2-3), 1999, pp. 90-96
Permeated porous silicon for hydrocarbon sensor fabrication
Authors: Angelucci, R Poggi, A Dori, L Cardinali, GC Parisini, A Tagliani, A Mariasaldi, M Cavani, F
Citation: R. Angelucci et al., Permeated porous silicon for hydrocarbon sensor fabrication, SENS ACTU-A, 74(1-3), 1999, pp. 95-99
The lament of Venus Abandoned. Titian and Cipriano de Rore
Authors: Parisini, A
Citation: A. Parisini, The lament of Venus Abandoned. Titian and Cipriano de Rore, NUOV RIV M, 33(4), 1999, pp. 573-575
Occupancy level of the DX center in Te-doped AlxGa1-xSb
Authors: Baraldi, A Ghezzi, C Parisini, A Magnanini, R Tarricone, L Franchi, S
Citation: A. Baraldi et al., Occupancy level of the DX center in Te-doped AlxGa1-xSb, J APPL PHYS, 85(1), 1999, pp. 256-263
A shallow state coexisting with the DX center in Te-doped AlGaSb
Authors: Baraldi, A Franchi, S Ghezzi, C Magnanini, R Parisini, A Tarricone, L
Citation: A. Baraldi et al., A shallow state coexisting with the DX center in Te-doped AlGaSb, PHYS ST S-B, 210(2), 1998, pp. 759-763
Risultati: 1-20 |