ACNP - Italian Periodicals Catalogue

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Results: 1-11 |

Results: 11

Effect of MeV energy He and N pre-implantation on the formation of porous silicon

Authors: Manuaba, A Paszti, F Ortega, C Grosman, A Horvath, ZE Szilagyi, E Khanh, NQ Vickridge, I

Citation: A. Manuaba et al., Effect of MeV energy He and N pre-implantation on the formation of porous silicon, NUCL INST B, 179(1), 2001, pp. 63-70

Synthesis of cobalt silicide on porous silicon by high dose ion implantation

Authors: Ramos, AR Paszti, F Kotai, E Vazsonyi, E Conde, O da Silva, MR da Silva, MF Soares, JC

Citation: Ar. Ramos et al., Synthesis of cobalt silicide on porous silicon by high dose ion implantation, NUCL INST B, 178, 2001, pp. 283-286

Pore propagation directions in p(+) porous silicon

Authors: Vazsonyi, E Battistig, G Horvath, ZE Fried, M Kadar, G Paszti, F Cantin, JL Vanhaeren, D Stalmans, L Poortmans, J

Citation: E. Vazsonyi et al., Pore propagation directions in p(+) porous silicon, J POROUS MA, 7(1-3), 2000, pp. 57-61

Tracks induced in TeO2 by heavy ions at low velocities

Authors: Szenes, G Paszti, F Peter, A Popov, AI

Citation: G. Szenes et al., Tracks induced in TeO2 by heavy ions at low velocities, NUCL INST B, 166, 2000, pp. 949-953

Investigation of beam effect on porous silicon

Authors: Kotai, E Paszti, F Szilagyi, E

Citation: E. Kotai et al., Investigation of beam effect on porous silicon, NUCL INST B, 161, 2000, pp. 260-263

Study of interdiffusion in amorphous Si/Ge multilayers by Rutherford backscattering spectrometry

Authors: Simon, A Csik, A Paszti, F Kiss, AZ Beke, DL Daroczi, L Erdelyi, Z Langer, GA

Citation: A. Simon et al., Study of interdiffusion in amorphous Si/Ge multilayers by Rutherford backscattering spectrometry, NUCL INST B, 161, 2000, pp. 471-475

Ion beam synthesis of chromium silicide on porous silicon

Authors: Ramos, AR Conde, O Paszti, F Battistig, G Vazsonyi, E da Silva, MR da Silva, MF Soares, JC

Citation: Ar. Ramos et al., Ion beam synthesis of chromium silicide on porous silicon, NUCL INST B, 161, 2000, pp. 926-930

Application of resonant backscattering spectrometry for determination of pore structure changes

Authors: Paszti, F Szilagyi, E Manuaba, A Battistig, G

Citation: F. Paszti et al., Application of resonant backscattering spectrometry for determination of pore structure changes, NUCL INST B, 161, 2000, pp. 963-968

Ion beam characterisation and modification of porous silicon

Authors: Paszti, F Battistig, G

Citation: F. Paszti et G. Battistig, Ion beam characterisation and modification of porous silicon, PHYS ST S-A, 182(1), 2000, pp. 271-278

Three-dimensional scanning of ion-implanted porous silicon

Authors: Simon, A Paszti, F Manuaba, A Kiss, AZ

Citation: A. Simon et al., Three-dimensional scanning of ion-implanted porous silicon, NUCL INST B, 158(1-4), 1999, pp. 658-664

Tin dioxide sol-gel derived films doped with platinum and antimony deposited on porous silicon

Authors: Savaniu, C Arnautu, A Cobianu, C Craciun, G Flueraru, C Zaharescu, M Parlog, C Paszti, F Van den Berg, A

Citation: C. Savaniu et al., Tin dioxide sol-gel derived films doped with platinum and antimony deposited on porous silicon, THIN SOL FI, 349(1-2), 1999, pp. 29-35

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