AAAAAA

   
Results: 1-10 |
Results: 10
High performance Si/Si1-Ge-x(x) resonant tunneling diodes
Authors: See, P Paul, DJ Hollander, B Mantl, S Zozoulenko, IV Berggren, KF
Citation: P. See et al., High performance Si/Si1-Ge-x(x) resonant tunneling diodes, IEEE ELEC D, 22(4), 2001, pp. 182-184
Si/SiGe electron resonant tunneling diodes with graded spacer wells
Authors: Paul, DJ See, P Bates, R Griffin, N Coonan, BP Redmond, G Crean, GM Zozoulenko, IV Berggren, KF Hollander, B Mantl, S
Citation: Dj. Paul et al., Si/SiGe electron resonant tunneling diodes with graded spacer wells, APPL PHYS L, 78(26), 2001, pp. 4184-4186
Inverted modulation-doped n-type Si/Si0.77Ge0.23 heterostructures
Authors: Dunford, RB Ahmed, A Paul, DJ Pepper, M Churchill, AC Robbins, DJ Pidduck, AJ
Citation: Rb. Dunford et al., Inverted modulation-doped n-type Si/Si0.77Ge0.23 heterostructures, MICROEL ENG, 53(1-4), 2000, pp. 205-208
Si/Si1-xGex heterostructure field effect transistors fabricated using a low thermal budget CMOS process
Authors: Dunford, RB Paul, DJ Pepper, M Coonan, B Griffin, N Redmond, G Crean, GM Hollander, B Mantl, S
Citation: Rb. Dunford et al., Si/Si1-xGex heterostructure field effect transistors fabricated using a low thermal budget CMOS process, MICROEL ENG, 53(1-4), 2000, pp. 209-212
Schottky gating high mobility Si/Si1-xGex 2D electron systems
Authors: Dunford, RB Griffin, N Paul, DJ Pepper, M Robbins, DJ Churchill, AC Leong, WY
Citation: Rb. Dunford et al., Schottky gating high mobility Si/Si1-xGex 2D electron systems, THIN SOL FI, 369(1-2), 2000, pp. 316-319
Si/SiGe n-type inverted modulation doping using ion implantation
Authors: Ahmed, A Dunford, RB Paul, DJ Pepper, M Churchill, AC Robbins, DJ Pidduck, AJ
Citation: A. Ahmed et al., Si/SiGe n-type inverted modulation doping using ion implantation, THIN SOL FI, 369(1-2), 2000, pp. 324-327
Investigation of Si/SiGe heterostructure material using non-destructive optical techniques
Authors: Coonan, BP Griffin, N Beechinor, JT Murtagh, M Redmond, G Crean, GM Hollander, B Mantl, S Bozzo, S Lazzari, JL d'Avitaya, FA Derrien, J Paul, DJ
Citation: Bp. Coonan et al., Investigation of Si/SiGe heterostructure material using non-destructive optical techniques, THIN SOL FI, 364(1-2), 2000, pp. 75-79
Si/SiGe electron resonant tunneling diodes
Authors: Paul, DJ See, P Zozoulenko, IV Berggren, KF Kabius, B Hollander, B Mantl, S
Citation: Dj. Paul et al., Si/SiGe electron resonant tunneling diodes, APPL PHYS L, 77(11), 2000, pp. 1653-1655
Silicon-germanium strained layer materials in microelectronics
Authors: Paul, DJ
Citation: Dj. Paul, Silicon-germanium strained layer materials in microelectronics, ADVAN MATER, 11(3), 1999, pp. 191
Silicon quantum integrated circuits - an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques
Authors: Paul, DJ Coonan, B Redmond, G O'Neill, BJ Crean, GM Hollander, B Mantl, S Zozoulenko, I Berggren, KF Lazzari, JL d'Avitaya, FA Derrien, J
Citation: Dj. Paul et al., Silicon quantum integrated circuits - an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques, THIN SOL FI, 336(1-2), 1998, pp. 130-136
Risultati: 1-10 |