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Results: 1-18 |
Results: 18
A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers
Authors: Svrcek, V Pelant, I Kocka, J Fejfar, A Tousek, J Kondo, M Matsuda, A
Citation: V. Svrcek et al., A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers, PHIL MAG L, 81(6), 2001, pp. 405-410
Charge transport in microcrystalline Si - the specific features
Authors: Kocka, J Fejfar, A Fojtik, P Luterova, K Pelant, I Rezek, B Stuchlikova, H Stuchlik, J Svrcek, V
Citation: J. Kocka et al., Charge transport in microcrystalline Si - the specific features, SOL EN MAT, 66(1-4), 2001, pp. 61-71
Room temperature electric field induced crystallization of wide band gap hydrogenated amorphous silicon
Authors: Pelant, I Fojtik, P Luterova, K Kocka, J Knizek, K Stepanek, J
Citation: I. Pelant et al., Room temperature electric field induced crystallization of wide band gap hydrogenated amorphous silicon, THIN SOL FI, 383(1-2), 2001, pp. 101-103
Detection of bottom depletion layer and its influence on surface photovoltage measurement in mu c-Si : H
Authors: Svrcek, V Pelant, I Stuchlik, J Fejfar, A Kocka, J
Citation: V. Svrcek et al., Detection of bottom depletion layer and its influence on surface photovoltage measurement in mu c-Si : H, THIN SOL FI, 383(1-2), 2001, pp. 271-273
Electroluminescence from sol-gel derived film of CdS nanocrystals
Authors: Valenta, J Dian, J Luterova, K Pelant, I Bursik, J Niznansky, D
Citation: J. Valenta et al., Electroluminescence from sol-gel derived film of CdS nanocrystals, PHYS ST S-A, 184(2), 2001, pp. R1-R3
Transport anisotropy in microcrystalline silicon studied by measurement ofambipolar diffusion length
Authors: Svrcek, V Pelant, I Kocka, J Fojtik, P Rezek, B Stuchlikova, H Fejfar, A Stuchlik, J Poruba, A Tousek, J
Citation: V. Svrcek et al., Transport anisotropy in microcrystalline silicon studied by measurement ofambipolar diffusion length, J APPL PHYS, 89(3), 2001, pp. 1800-1805
Carrier diffusion in microcrystalline silicon studied by the picosecond laser induced grating technique
Authors: Kudrna, J Trojanek, F Maly, P Pelant, I
Citation: J. Kudrna et al., Carrier diffusion in microcrystalline silicon studied by the picosecond laser induced grating technique, APPL PHYS L, 79(5), 2001, pp. 626-628
Temperature behaviour of optical properties of Si+-implanted SiO2
Authors: Valenta, J Dian, J Luterova, K Knapek, P Pelant, I Nikl, M Muller, D Grob, JJ Rehspringer, JL Honerlage, B
Citation: J. Valenta et al., Temperature behaviour of optical properties of Si+-implanted SiO2, EUR PHY J D, 8(3), 2000, pp. 395-398
Wide gap hydrogenated amorphous silicon for visible light emission
Authors: Luterova, K Poruba, A Dian, J Salyk, O Horvath, P Knapek, P Valenta, J Kocka, J Pelant, I
Citation: K. Luterova et al., Wide gap hydrogenated amorphous silicon for visible light emission, J POROUS MA, 7(1-3), 2000, pp. 135-138
Visible photoluminescence and electroluminescence in wide-bandgap hydrogenated amorphous silicon
Authors: Luterova, K Pelant, I Fojtik, P Nikl, M Gregora, I Kocka, J Dian, J Valenta, J Maly, P Kudrna, J Stepanek, J Poruba, A Horvath, P
Citation: K. Luterova et al., Visible photoluminescence and electroluminescence in wide-bandgap hydrogenated amorphous silicon, PHIL MAG B, 80(10), 2000, pp. 1811-1832
Ultrafast carrier dynamics in undoped microcrystalline silicon
Authors: Kudrna, J Maly, P Trojanek, F Stepanek, J Lechner, T Pelant, I Meier, J Kroll, U
Citation: J. Kudrna et al., Ultrafast carrier dynamics in undoped microcrystalline silicon, MAT SCI E B, 69, 2000, pp. 238-242
Optical properties of Si+-ion implanted sol-gel derived SiO2 films
Authors: Dian, J Valenta, J Luterova, K Pelant, I Nikl, M Muller, D Grob, JJ Rehspringer, JL Honerlage, B
Citation: J. Dian et al., Optical properties of Si+-ion implanted sol-gel derived SiO2 films, MAT SCI E B, 69, 2000, pp. 564-569
Time evolution of photoluminescence response from porous silicon in hydrocarbon gas sensing
Authors: Dian, J Holec, T Jelinek, I Jindrich, J Valenta, J Pelant, I
Citation: J. Dian et al., Time evolution of photoluminescence response from porous silicon in hydrocarbon gas sensing, PHYS ST S-A, 182(1), 2000, pp. 485-488
Light emitting wide band gap a-Si : H deposited by microwave electron cyclotron resonance plasma-enhanced chemical vapour deposition
Authors: Luterova, K Fojtik, P Poruba, A Dian, J Valenta, J Stuchlikova, H Stepanek, J Kocka, J Pelant, I
Citation: K. Luterova et al., Light emitting wide band gap a-Si : H deposited by microwave electron cyclotron resonance plasma-enhanced chemical vapour deposition, J NON-CRYST, 266, 2000, pp. 583-587
Red electroluminescence in Si+-implanted sol-gel-derived SiO2 films
Authors: Luterova, K Pelant, I Valenta, J Rehspringer, JL Muller, D Grob, JJ Dian, J Honerlage, B
Citation: K. Luterova et al., Red electroluminescence in Si+-implanted sol-gel-derived SiO2 films, APPL PHYS L, 77(19), 2000, pp. 2952-2954
Blue electroluminescence from high dose Si+ implantation in SiO2
Authors: Muller, D Knapek, P Faure, J Prevot, B Grob, JJ Honerlage, B Pelant, I
Citation: D. Muller et al., Blue electroluminescence from high dose Si+ implantation in SiO2, NUCL INST B, 148(1-4), 1999, pp. 997-1001
Visible photoluminescence in hydrogenated amorphous silicon grown in microwave plasma from SiH4 strongly diluted with He
Authors: Dian, J Valenta, J Hala, J Poruba, A Horvath, P Luterova, K Gregora, I Pelant, I
Citation: J. Dian et al., Visible photoluminescence in hydrogenated amorphous silicon grown in microwave plasma from SiH4 strongly diluted with He, J APPL PHYS, 86(3), 1999, pp. 1415-1419
Ultrafast carrier dynamics in wide gap hydrogenated amorphous silicon
Authors: Kudrna, J Maly, P Trojanek, F Pelant, I Kocka, J Poruba, A Surendran, S Jiricka, J
Citation: J. Kudrna et al., Ultrafast carrier dynamics in wide gap hydrogenated amorphous silicon, J LUMINESC, 80(1-4), 1998, pp. 435-438
Risultati: 1-18 |