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Results: 1-12 |
Results: 12
Influence of the applied cooling rate on the type conversion of platinum diffused n-type silicon
Authors: Ventura, L Pichaud, B Lanois, F Lhorte, A
Citation: L. Ventura et al., Influence of the applied cooling rate on the type conversion of platinum diffused n-type silicon, JPN J A P 1, 40(6A), 2001, pp. 3938-3943
Misfit dislocation cross-slip at the first stages of plastic relaxation inlow-mismatch heterostructures
Authors: Putero, M Burle, N Pichaud, B
Citation: M. Putero et al., Misfit dislocation cross-slip at the first stages of plastic relaxation inlow-mismatch heterostructures, PHIL MAG A, 81(1), 2001, pp. 125-136
Metastability in the Matthews-Blakeslee mechanism for semiconductor film relaxation
Authors: Putero-Vuaroqueaux, M Burle, N Pichaud, B
Citation: M. Putero-vuaroqueaux et al., Metastability in the Matthews-Blakeslee mechanism for semiconductor film relaxation, PHIL MAG L, 81(8), 2001, pp. 519-525
Gold and platinum profiles in fast power devices
Authors: Bostrom, O Pichaud, B Regula, M Bajard, JC Blondiaux, G Soltanovich, OA Yakimov, EB Lhorte, A Quoirin, JB
Citation: O. Bostrom et al., Gold and platinum profiles in fast power devices, MAT SCI E B, 71, 2000, pp. 166-170
Gettering of platinum by cavities induced in silicon by high energy implantation of HE ions
Authors: Mariani-Regula, G Pichaud, B Godey, S Ntsoenzok, E Perner, O El Bouayadi, R
Citation: G. Mariani-regula et al., Gettering of platinum by cavities induced in silicon by high energy implantation of HE ions, MAT SCI E B, 71, 2000, pp. 203-206
Interaction of gold with dislocations in silicon
Authors: Pichaud, B Mariani-Regula, G Yakimov, EB
Citation: B. Pichaud et al., Interaction of gold with dislocations in silicon, MAT SCI E B, 71, 2000, pp. 272-275
Si (001) surface defects after extended high temperature annealing
Authors: Barge, D Joly, JP Rolland, G Pichaud, B
Citation: D. Barge et al., Si (001) surface defects after extended high temperature annealing, MAT SCI E B, 71, 2000, pp. 276-281
Gettering of diffused Au and of Cu and Ni contamination in silicon by cavities induced by high energy He implantation
Authors: El Bouayadi, R Regula, G Pichaud, B Lancin, M Dubois, C Ntsoenzok, E
Citation: R. El Bouayadi et al., Gettering of diffused Au and of Cu and Ni contamination in silicon by cavities induced by high energy He implantation, PHYS ST S-B, 222(1), 2000, pp. 319-326
Experimental and theoretical study of misfit dislocation development in low-mismatched heterostructures: application to GaAs/Ge
Authors: Putero, M Burle, N Pichaud, B
Citation: M. Putero et al., Experimental and theoretical study of misfit dislocation development in low-mismatched heterostructures: application to GaAs/Ge, PHIL MAG A, 79(11), 1999, pp. 2711-2724
Elemental dislocation mechanisms involved in the relaxation of heteroepitaxial semiconducting systems
Authors: Pichaud, B Putero, M Burle, N
Citation: B. Pichaud et al., Elemental dislocation mechanisms involved in the relaxation of heteroepitaxial semiconducting systems, PHYS ST S-A, 171(1), 1999, pp. 251-265
Oxygen effect on electrical and optical properties of dislocations in silicon
Authors: Feklisova, OV Mariani-Regula, G Pichaud, B Yakimov, EB
Citation: Ov. Feklisova et al., Oxygen effect on electrical and optical properties of dislocations in silicon, PHYS ST S-A, 171(1), 1999, pp. 341-346
Reconstruction of diffusion length distributions in semiconductors by photocurrent measurements with the depletion region modulation
Authors: Feklisova, OV Yakimov, EB Bostrom, O Pichaud, B
Citation: Ov. Feklisova et al., Reconstruction of diffusion length distributions in semiconductors by photocurrent measurements with the depletion region modulation, J APPL PHYS, 86(9), 1999, pp. 5070-5074
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