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Results: 1-8 |
Results: 8
Ion-beam-assisted nanocrystal formation in silicon implanted with high doses of Pb+ and Bi+ ions
Authors: Kalitzova, M Zollo, G Yankov, R Angelov, C Simov, S Pizzuto, C Faure, J Kilian, L Bonhomme, P Manno, D Voelskow, M Vitali, G
Citation: M. Kalitzova et al., Ion-beam-assisted nanocrystal formation in silicon implanted with high doses of Pb+ and Bi+ ions, JPN J A P 1, 40(10), 2001, pp. 5841-5849
Modification of the structure of ZnO : Al films by control of the plasma parameters
Authors: Tzolov, M Tzenov, N Dimova-Malinovska, D Kalitzova, M Pizzuto, C Vitali, G Zollo, G Ivanov, I
Citation: M. Tzolov et al., Modification of the structure of ZnO : Al films by control of the plasma parameters, THIN SOL FI, 396(1-2), 2001, pp. 274-279
Effects of the annealing atmosphere on the electrical properties of low-power pulsed-laser annealed Zn-implanted InP
Authors: Pizzuto, C Vitali, G Zollo, G Kalitzova, M
Citation: C. Pizzuto et al., Effects of the annealing atmosphere on the electrical properties of low-power pulsed-laser annealed Zn-implanted InP, VACUUM, 58(2-3), 2000, pp. 516-522
Vibrational properties and structure of undoped and Al-doped ZnO films deposited by RF magnetron sputtering
Authors: Tzolov, M Tzenov, N Dimova-Malinovska, D Kalitzova, M Pizzuto, C Vitali, G Zollo, G Ivanov, I
Citation: M. Tzolov et al., Vibrational properties and structure of undoped and Al-doped ZnO films deposited by RF magnetron sputtering, THIN SOL FI, 379(1-2), 2000, pp. 28-36
In-depth characterisation of electrical carrier activation in Zn+-implanted and laser annealed InP
Authors: Dinia, A Zollo, G Pizzuto, C Vitali, G Kalitzova, M
Citation: A. Dinia et al., In-depth characterisation of electrical carrier activation in Zn+-implanted and laser annealed InP, SOL ST COMM, 113(7), 2000, pp. 385-388
High resolution transmission electron microscopy of elevated temperature Zn+ implanted and low-power pulsed laser annealed GaAs
Authors: Zollo, G Pizzuto, C Vitali, G Kalitzova, M Manno, D
Citation: G. Zollo et al., High resolution transmission electron microscopy of elevated temperature Zn+ implanted and low-power pulsed laser annealed GaAs, J APPL PHYS, 88(4), 2000, pp. 1806-1810
Electrical carrier activation in Zn+ implanted and low-power pulsed-laser annealed InP in nitrogen atmosphere
Authors: Pizzuto, C Zollo, G Vitali, G
Citation: C. Pizzuto et al., Electrical carrier activation in Zn+ implanted and low-power pulsed-laser annealed InP in nitrogen atmosphere, J MAT S-M E, 10(5-6), 1999, pp. 407-411
Structural reordering and electrical activation of ion-implanted GaAs and InP due to laser annealing in a controlled atmosphere
Authors: Vitali, G Pizzuto, C Zollo, G Karpuzov, D Kalitzova, M van der Heide, P Scamarcio, G Spagnolo, V Chiavarone, L Manno, D
Citation: G. Vitali et al., Structural reordering and electrical activation of ion-implanted GaAs and InP due to laser annealing in a controlled atmosphere, PHYS REV B, 59(4), 1999, pp. 2986-2994
Risultati: 1-8 |