Authors: Savkina, NS Lebedev, AA Davydov, DV Strel'chuk, AM Tregubova, AS Raynaud, C Chante, JP Locatelli, ML Planson, D Milan, J Godignon, P Campos, FJ Mestres, N Pascual, J Brezeanu, G Badila, M

Citation: Ns. Savkina et al., Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy, MAT SCI E B, 77(1), 2000, pp. 50-54

Authors: Berberich, S Godignon, P Millan, J Planson, D Hartnagel, HL Senes, A

Citation: S. Berberich et al., Electrical characterisation of MNOS devices on p-type 6H-SiC, DIAM RELAT, 8(2-5), 1999, pp. 305-308

Authors: Ottaviani, L Locatelli, ML Planson, D Isoird, K Chante, JP Morvan, E Godignon, P

Citation: L. Ottaviani et al., P-N Junction creation in 6H-SiC by aluminum implantation, MAT SCI E B, 61-2, 1999, pp. 424-428

Authors: Planson, D Locatelli, ML Lanois, F Chante, JP

Citation: D. Planson et al., Design of a 600 V silicon carbide vertical power MOSFET, MAT SCI E B, 61-2, 1999, pp. 497-501

Authors: Lanois, F Planson, D Locatelli, ML Lassagne, P Jaussaud, C Chante, JP

Citation: F. Lanois et al., Chemical contribution of oxygen to silicon carbide plasma etching kineticsin a distributed electron cyclotron resonance (DECR) reactor, J ELEC MAT, 28(3), 1999, pp. 219-224

Authors: Ottaviani, L Morvan, E Locatelli, ML Planson, D Godignon, P Chante, JP Senes, A

Citation: L. Ottaviani et al., Aluminum multiple implantations in 6H-SiC at 300 K, SOL ST ELEC, 43(12), 1999, pp. 2215-2223