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Results: 1-12 |
Results: 12
Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices
Authors: Litzenberger, M Pichler, R Bychikhin, S Pogany, D Gornik, E Esmark, K Gossner, H
Citation: M. Litzenberger et al., Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices, MICROEL REL, 41(9-10), 2001, pp. 1385-1390
Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures
Authors: Bychikhin, S Litzenberger, M Pichler, R Pogany, D Gornik, E Groos, G Stecher, M
Citation: S. Bychikhin et al., Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures, MICROEL REL, 41(9-10), 2001, pp. 1501-1506
Random telegraph signal noise mechanisms in reverse base current of hot carrier-degraded submicron bipolar transistors: Effect of carrier trapping during stress on noise characteristics
Authors: Pogany, D Chroboczek, JA Ghibaudo, G
Citation: D. Pogany et al., Random telegraph signal noise mechanisms in reverse base current of hot carrier-degraded submicron bipolar transistors: Effect of carrier trapping during stress on noise characteristics, J APPL PHYS, 89(7), 2001, pp. 4049-4058
Interferometric temperature mapping during ESD stress and failure analysisof smart power technology ESD protection devices
Authors: Furbock, C Pogany, D Litzenberger, M Gornik, E Seliger, N Gossner, H Muller-Lynch, T Stecher, M Werner, W
Citation: C. Furbock et al., Interferometric temperature mapping during ESD stress and failure analysisof smart power technology ESD protection devices, J ELECTROST, 49(3-4), 2000, pp. 195-213
Study of triggering inhomogeneities in gg-nMOS ESD protection devices via thermal mapping using backside laser interferometry.
Authors: Litzenberger, M Esmark, K Pogany, D Furbock, C Gossner, H Gornik, E Fichtner, W
Citation: M. Litzenberger et al., Study of triggering inhomogeneities in gg-nMOS ESD protection devices via thermal mapping using backside laser interferometry., MICROEL REL, 40(8-10), 2000, pp. 1359-1364
Thermal and free carrier concentration mapping during ESD event in Smart Power ESD protection devices using an improved laser interferometric technique
Authors: Furbock, C Esmark, K Litzenberger, M Pogany, D Groos, G Zelsacher, R Stecher, M Gornik, E
Citation: C. Furbock et al., Thermal and free carrier concentration mapping during ESD event in Smart Power ESD protection devices using an improved laser interferometric technique, MICROEL REL, 40(8-10), 2000, pp. 1365-1370
Bulk and surface degradation mode in 0.35 mu m technology gg-nMOS ESD protection devices.
Authors: Pogany, D Esmark, K Litzenberger, M Furbock, C Gossner, H Gornik, E
Citation: D. Pogany et al., Bulk and surface degradation mode in 0.35 mu m technology gg-nMOS ESD protection devices., MICROEL REL, 40(8-10), 2000, pp. 1467-1472
Random telegraph noise and leakage current in smart power technology DMOS devices
Authors: Pogany, D Gornik, E Stecher, M Werner, W
Citation: D. Pogany et al., Random telegraph noise and leakage current in smart power technology DMOS devices, MICROEL REL, 40(11), 2000, pp. 1887-1890
Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress
Authors: Furbock, C Litzenberger, M Pogany, D Gornik, E Seliger, N Muller-Lynch, T Stecher, M Gossner, H Werner, W
Citation: C. Furbock et al., Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress, MICROEL REL, 39(6-7), 1999, pp. 925-930
Damage analysis in smart-power technology electrostatic discharge (ESD) protection devices
Authors: Pogany, D Seliger, N Litzenberger, M Gossner, H Stecher, M Muller-Lynch, T Werner, W Gornik, E
Citation: D. Pogany et al., Damage analysis in smart-power technology electrostatic discharge (ESD) protection devices, MICROEL REL, 39(6-7), 1999, pp. 1143-1148
Random telegraph signal noise instabilities in lattice-mismatched InGaAs InP photodiodes
Authors: Pogany, D Guillot, G
Citation: D. Pogany et G. Guillot, Random telegraph signal noise instabilities in lattice-mismatched InGaAs InP photodiodes, MICROEL REL, 39(3), 1999, pp. 341-345
Study of hot carrier degradation in dram cells combining random telegraph signal and charge pumping measurements
Authors: Pierunek, S Pogany, D Autran, JL Leroy, B
Citation: S. Pierunek et al., Study of hot carrier degradation in dram cells combining random telegraph signal and charge pumping measurements, J NON-CRYST, 245, 1999, pp. 59-66
Risultati: 1-12 |