AAAAAA

   
Results: 1-14 |
Results: 14
Diagnostics of high-resistivity GaAs wafers by microwave photoconductivity
Authors: Vlasenko, LS Gorelenok, AT Emtsev, VV Kamanin, AV Kokhanovskii, SI Poloskin, DS Shmidt, NM
Citation: Ls. Vlasenko et al., Diagnostics of high-resistivity GaAs wafers by microwave photoconductivity, TECH PHYS L, 27(1), 2001, pp. 9-10
Surface gettering of background impurities and defects in GaAs wafers
Authors: Vlasenko, LS Gorelenok, AT Emtsev, VV Kamanin, AV Poloskin, DS Shmidt, NM
Citation: Ls. Vlasenko et al., Surface gettering of background impurities and defects in GaAs wafers, SEMICONDUCT, 35(2), 2001, pp. 177-180
Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon
Authors: Emtsev, VV Poloskin, DS Shek, EI Sobolev, NA Kimerling, LC
Citation: Vv. Emtsev et al., Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon, MAT SCI E B, 81(1-3), 2001, pp. 74-76
Point defects in gamma-irradiated n-GaN
Authors: Emtsev, VV Davydov, VY Kozlovskii, VV Lundin, VV Poloskin, DS Smirnov, AN Shmidt, NM Usikov, AS Aderhold, J Klausing, H Mistele, D Rotter, T Stemmer, J Semchinova, O Graul, J
Citation: Vv. Emtsev et al., Point defects in gamma-irradiated n-GaN, SEMIC SCI T, 15(1), 2000, pp. 73-78
Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films
Authors: Emtsev, VV Davydov, VY Lundin, VV Poloskin, DS Aderhold, J Klausing, H Mistele, D Rotter, T Stemmer, J Fedler, F Semchinova, O Graul, J
Citation: Vv. Emtsev et al., Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films, J CRYST GR, 210(1-3), 2000, pp. 273-277
Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium
Authors: Emtsev, VV Emtsev, VV Poloskin, DS Sobolev, NA Shek, EI Michel, J Kimerling, LC
Citation: Vv. Emtsev et al., Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium, SEMICONDUCT, 33(6), 1999, pp. 603-605
Effect of gamma irradiation on the photoluminescence kinetics of porous silicon
Authors: Agekyan, VF Stepanov, YA Emtsev, VV Lebedev, AA Poloskin, DS Remenyuk, AD
Citation: Vf. Agekyan et al., Effect of gamma irradiation on the photoluminescence kinetics of porous silicon, SEMICONDUCT, 33(12), 1999, pp. 1315-1317
Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium
Authors: Emtsev, VV Emtsev, VV Poloskin, DS Shek, EI Sobolev, NA Michel, J Kimerling, LC
Citation: Vv. Emtsev et al., Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium, SEMICONDUCT, 33(10), 1999, pp. 1084-1087
Behavior of electrically active point defects in irradiated MOCVD n-GaN
Authors: Emtsev, VV Davydov, VY Kozlovskii, VV Poloskin, DS Smirnov, AN Shmidt, NM Usikov, AS
Citation: Vv. Emtsev et al., Behavior of electrically active point defects in irradiated MOCVD n-GaN, PHYSICA B, 274, 1999, pp. 101-104
Electron irradiation of heavily doped silicon: group-III impurity ion pairs
Authors: Emtsev, VV Ehrhart, P Poloskin, DS Dedek, U
Citation: Vv. Emtsev et al., Electron irradiation of heavily doped silicon: group-III impurity ion pairs, PHYSICA B, 274, 1999, pp. 287-290
Impurity effects in silicon implanted with rare-earth ions
Authors: Emtsev, VV Emtsev, VV Poloskin, DS Shek, EI Sobolev, NA Michel, J Kimerling, LC
Citation: Vv. Emtsev et al., Impurity effects in silicon implanted with rare-earth ions, PHYSICA B, 274, 1999, pp. 346-349
Effect of annealing on defects in As-grown and gamma-ray irradiated n-GaN layers
Authors: Shmidt, NM Davydov, DV Emtsev, VV Krestnikov, IL Lebedev, AA Lundin, WV Poloskin, DS Sakharov, AV Usikov, AS Osinsky, AV
Citation: Nm. Shmidt et al., Effect of annealing on defects in As-grown and gamma-ray irradiated n-GaN layers, PHYS ST S-B, 216(1), 1999, pp. 533-536
Mosaic structure and Si doping related peculiarities of charge carrier transport in III-V nitrides
Authors: Shmidt, NM Emtsev, VV Kryzhanovsky, AS Kyutt, RN Lundin, WV Poloskin, DS Ratnikov, VV Sakharov, AV Titkov, AN Usikov, AS Girard, P
Citation: Nm. Shmidt et al., Mosaic structure and Si doping related peculiarities of charge carrier transport in III-V nitrides, PHYS ST S-B, 216(1), 1999, pp. 581-586
A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon
Authors: Emtsev, VV Emtsev, VV Poloskin, DS Shek, EI Sobolev, NA
Citation: Vv. Emtsev et al., A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon, J LUMINESC, 80(1-4), 1998, pp. 391-394
Risultati: 1-14 |