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Results: 1-25 | 26-50 | 51-69
Results: 1-25/69
High-nitrogen-pressure growth of GaN single crystals: doping and physical properties
Authors: Krukowski, S Bockowski, M Lucznik, B Grzegory, I Porowski, S Suski, T Romanowski, Z
Citation: S. Krukowski et al., High-nitrogen-pressure growth of GaN single crystals: doping and physical properties, J PHYS-COND, 13(40), 2001, pp. 8881-8890
Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grownby molecular beam epitaxy
Authors: Morel, A Taliercio, T Lefebvre, P Gallart, M Gil, B Grandjean, N Massies, J Grzegory, I Porowski, S
Citation: A. Morel et al., Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grownby molecular beam epitaxy, MAT SCI E B, 82(1-3), 2001, pp. 173-177
Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy
Authors: Weyher, JL Albrecht, M Wosinski, T Nowak, G Strunk, HP Porowski, S
Citation: Jl. Weyher et al., Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy, MAT SCI E B, 80(1-3), 2001, pp. 318-321
Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors
Authors: Neu, G Teisseire, M Lemasson, P Lahreche, H Grandjean, N Semond, F Beaumont, B Grzegory, I Porowski, S Triboulet, R
Citation: G. Neu et al., Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors, PHYSICA B, 302, 2001, pp. 39-53
GaN/AlGaN quantum wells for UV emission: heteroepitaxy versus homoepitaxy
Authors: Grandjean, N Massies, J Grzegory, I Porowski, S
Citation: N. Grandjean et al., GaN/AlGaN quantum wells for UV emission: heteroepitaxy versus homoepitaxy, SEMIC SCI T, 16(5), 2001, pp. 358-361
Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN - art. no. 125203
Authors: Bayerl, MW Brandt, MS Ambacher, O Stutzmann, M Glaser, ER Henry, RL Wickenden, AE Koleske, DD Suski, T Grzegory, I Porowski, S
Citation: Mw. Bayerl et al., Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN - art. no. 125203, PHYS REV B, 6312(12), 2001, pp. 5203
Photoemission studies on GaN(0 0 0 (1)over-bar) surfaces
Authors: Kowalski, BJ Plucinski, L Kopalko, K Iwanowski, RJ Orlowski, BA Johnson, RL Grzegory, I Porowski, S
Citation: Bj. Kowalski et al., Photoemission studies on GaN(0 0 0 (1)over-bar) surfaces, SURF SCI, 482, 2001, pp. 740-745
Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlNquantum wells grown by molecular beam epitaxy
Authors: Taliercio, T Gallart, M Lefebvre, P Morel, A Gil, B Allegre, J Grandjean, N Massies, J Grzegory, I Porowski, S
Citation: T. Taliercio et al., Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlNquantum wells grown by molecular beam epitaxy, SOL ST COMM, 117(7), 2001, pp. 445-448
The effect of high pressure an the quality and shelf-life of cooked pork ham
Authors: Grochalska, D Barabasz, A Windyga, B Sciezynska, H Mroczek, J Fonberg-Broczek, M Porowski, S
Citation: D. Grochalska et al., The effect of high pressure an the quality and shelf-life of cooked pork ham, MED WETER, 57(12), 2001, pp. 924-928
III-N ternary epi-layers grown on the GaN bulk crystals
Authors: Leszczynski, M Prystawko, P Czernecki, R Lehnert, J Suski, T Perlin, P Wisniewski, P Grzegory, I Nowak, G Porowski, S Albrecht, M
Citation: M. Leszczynski et al., III-N ternary epi-layers grown on the GaN bulk crystals, J CRYST GR, 231(3), 2001, pp. 352-356
Optical and electrical properties of Be doped GaN bulk crystals
Authors: Suski, T Litwin-Staszewska, E Perlin, P Wisniewski, P Teisseyre, H Grzegory, I Bockowski, M Porowski, S Saarinen, K Nissila, J
Citation: T. Suski et al., Optical and electrical properties of Be doped GaN bulk crystals, J CRYST GR, 230(3-4), 2001, pp. 368-371
Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals
Authors: Frayssinet, E Knap, W Krukowski, S Perlin, P Wisniewski, P Suski, T Grzegory, I Porowski, S
Citation: E. Frayssinet et al., Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals, J CRYST GR, 230(3-4), 2001, pp. 442-447
Electrochemical etching of highly conductive GaN single crystals
Authors: Nowak, G Xia, XH Kelly, JJ Weyher, JL Porowski, S
Citation: G. Nowak et al., Electrochemical etching of highly conductive GaN single crystals, J CRYST GR, 222(4), 2001, pp. 735-740
Surface reaction of nitrogen with liquid group III metals
Authors: Romanowski, Z Krukowski, S Grzegory, I Porowski, S
Citation: Z. Romanowski et al., Surface reaction of nitrogen with liquid group III metals, J CHEM PHYS, 114(14), 2001, pp. 6353-6363
Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN
Authors: Jursenas, S Kurilcik, N Kurilcik, G Zukauskas, A Prystawko, P Leszcynski, M Suski, T Perlin, P Grzegory, I Porowski, S
Citation: S. Jursenas et al., Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN, APPL PHYS L, 78(24), 2001, pp. 3776-3778
Mg segregation, difficulties of P-doping in GaN
Authors: Liliental-Weber, Z Benamara, M Swider, W Washburn, J Grzegory, I Porowski, S Dupuis, RD Eiting, CJ
Citation: Z. Liliental-weber et al., Mg segregation, difficulties of P-doping in GaN, MRS I J N S, 5, 2000, pp. NIL_430-NIL_435
Highly chemical reactive ion etching of gallium nitride
Authors: Karouta, F Jacobs, B Moerman, I Jacobs, K Weyher, JL Porowski, S Crane, R Hageman, PR
Citation: F. Karouta et al., Highly chemical reactive ion etching of gallium nitride, MRS I J N S, 5, 2000, pp. NIL_768-NIL_773
MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices
Authors: Kirchner, C Schwegler, V Eberhard, F Kamp, M Ebeling, KJ Prystawko, P Leszczynski, M Grzegory, I Porowski, S
Citation: C. Kirchner et al., MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices, PROG CRYST, 41(1-4), 2000, pp. 57-83
Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies
Authors: Teisseyre, H Suski, T Perlin, P Grzegory, I Leszczynski, M Bockowski, M Porowski, S Freitas, JA Henry, RL Wickenden, AE Koleske, DD
Citation: H. Teisseyre et al., Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies, PHYS REV B, 62(15), 2000, pp. 10151-10157
GaN substrates for molecular beam epitaxy growth of homoepitaxial structures
Authors: Grzegory, I Porowski, S
Citation: I. Grzegory et S. Porowski, GaN substrates for molecular beam epitaxy growth of homoepitaxial structures, THIN SOL FI, 367(1-2), 2000, pp. 281-289
Electron spin resonance of erbium in gallium nitride
Authors: Palczewska, M Wolos, A Kaminska, M Grzegory, I Bockowski, M Krukowski, S Suski, T Porowski, S
Citation: M. Palczewska et al., Electron spin resonance of erbium in gallium nitride, SOL ST COMM, 114(1), 2000, pp. 39-42
Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate
Authors: Grandjean, N Damilano, B Massies, J Neu, G Teissere, M Grzegory, I Porowski, S Gallart, M Lefebvre, P Gil, B Albrecht, M
Citation: N. Grandjean et al., Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate, J APPL PHYS, 88(1), 2000, pp. 183-187
High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates
Authors: Frayssinet, E Knap, W Lorenzini, P Grandjean, N Massies, J Skierbiszewski, C Suski, T Grzegory, I Porowski, S Simin, G Hu, X Khan, MA Shur, MS Gaska, R Maude, D
Citation: E. Frayssinet et al., High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates, APPL PHYS L, 77(16), 2000, pp. 2551-2553
GaN-AlGaN heterostructure field-effect transistors over bulk GaN substrates
Authors: Khan, MA Yang, JW Knap, W Frayssinet, E Hu, X Simin, G Prystawko, P Leszczynski, M Grzegory, I Porowski, S Gaska, R Shur, MS Beaumont, B Teisseire, M Neu, G
Citation: Ma. Khan et al., GaN-AlGaN heterostructure field-effect transistors over bulk GaN substrates, APPL PHYS L, 76(25), 2000, pp. 3807-3809
Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium
Authors: Paszkowicz, W Adamczyk, J Krukowski, S Leszczynski, M Porowski, S Sokolowski, JA Michalec, M Lasocha, W
Citation: W. Paszkowicz et al., Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium, PHIL MAG A, 79(5), 1999, pp. 1145-1154
Risultati: 1-25 | 26-50 | 51-69