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Results:
1-13
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Results: 13
Authors:
Czerwinski, A
Katcki, J
Poyai, A
Simoen, E
Claeys, C
Ratajczak, J
Gaubas, E
Citation: A. Czerwinski et al., Statistical analysis of shallow p-n junction leakage increase using XTEM results probabilities, MAT SC S PR, 4(1-3), 2001, pp. 105-107
Authors:
Poyai, A
Simoen, E
Claeys, C
Rooyackers, R
Badenes, G
Citation: A. Poyai et al., Lifetime study in advanced isolation techniques, MAT SC S PR, 4(1-3), 2001, pp. 137-139
Authors:
Simoen, E
Poyai, A
Claeys, C
Lukyanchikova, N
Petrichuk, M
Garbar, N
Czerwinski, A
Katcki, J
Ratajczak, J
Gaubas, E
Citation: E. Simoen et al., Electrical characterization of shallow cobalt-silicided junctions, J MAT S-M E, 12(4-6), 2001, pp. 207-210
Authors:
Poyai, A
Simoen, E
Claeys, C
Citation: A. Poyai et al., Impact of a high electric field on the extraction of the generation lifetime from the reverse generation current component of shallow n(+)-p-well diodes, IEEE DEVICE, 48(10), 2001, pp. 2445-2446
Authors:
Poyai, A
Simoen, E
Claeys, C
Rooyackers, R
Badenes, G
Citation: A. Poyai et al., Diode analysis of high-energy boron implantation-induced P-well defects, J ELCHEM SO, 148(9), 2001, pp. G507-G512
Authors:
Poyai, A
Simoen, E
Claeys, C
Citation: A. Poyai et al., Hole-trapping-related transients in shallow n(+)-p junctions fabricated ina high-energy boron-implanted p well, APPL PHYS L, 78(7), 2001, pp. 949-951
Authors:
Poyai, A
Simoen, E
Claeys, C
Czerwinski, A
Gaubas, E
Citation: A. Poyai et al., Improved extraction of the activation energy of the leakage current in silicon p-n junction diodes, APPL PHYS L, 78(14), 2001, pp. 1997-1999
Authors:
Poyai, A
Simoen, E
Claeys, C
Czerwinski, A
Citation: A. Poyai et al., Silicon substrate effects on the current-voltage characteristics of advanced p-n junction diodes, MAT SCI E B, 73(1-3), 2000, pp. 191-196
Authors:
Lukyanchikova, NB
Petrichuk, MV
Garbar, N
Simoen, E
Poyai, A
Claeys, C
Citation: Nb. Lukyanchikova et al., Impact of cobalt silicidation on the low-frequency noise behavior of shallow P-N junctions, IEEE ELEC D, 21(8), 2000, pp. 408-410
Authors:
Czerwinski, A
Simoen, E
Poyai, A
Claeys, C
Citation: A. Czerwinski et al., Peripheral current analysis of silicon p-n junction and gated diodes, J APPL PHYS, 88(11), 2000, pp. 6506-6514
Authors:
Claeys, C
Simoen, E
Poyai, A
Czerwinski, A
Citation: C. Claeys et al., Electrical quality assessment of epitaxial wafers based on p-n junction diagnostics, J ELCHEM SO, 146(9), 1999, pp. 3429-3434
Authors:
Claeys, C
Poyai, A
Simoen, E
Czerwinski, A
Katcki, J
Citation: C. Claeys et al., p-n junction diagnostics to determine surface and bulk generation/recombination properties of silicon substrates, J ELCHEM SO, 146(3), 1999, pp. 1151-1157
Authors:
Poyai, A
Simoen, E
Claeys, C
Citation: A. Poyai et al., Current transients in almost-ideal Czochralski silicon p-n junction diodes, APPL PHYS L, 75(21), 1999, pp. 3342-3344
Risultati:
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