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Results:
1-23
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Results: 23
Authors:
Ganichev, SD
Danilov, SN
Bel'kov, VV
Ivchenko, EL
Ketterl, H
Vorobjev, LE
Bichler, M
Wegscheider, W
Prettl, W
Citation: Sd. Ganichev et al., Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in QWs, PHYSICA E, 10(1-3), 2001, pp. 52-56
Authors:
Ganichev, SD
Ziemann, E
Yassievich, IN
Perel, VI
Prettl, W
Citation: Sd. Ganichev et al., Characterization of deep impurities in semiconductors by terahertz tunneling ionization, MAT SC S PR, 4(1-3), 2001, pp. 281-284
Authors:
Novak, V
Svoboda, P
Kreuzer, S
Wegscheider, W
Prettl, W
Citation: V. Novak et al., Current-induced spatial patterns of photoluminescence in AlxGa1-xAs/GaAs heterojunctions at quantizing magnetic fields - art. no. 165302, PHYS REV B, 6416(16), 2001, pp. 5302
Authors:
Ganichev, SD
Ketterl, H
Prettl, W
Merkulov, IA
Perel, VI
Yassievich, IN
Malyshev, AV
Citation: Sd. Ganichev et al., Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities - art. no. 201204, PHYS REV B, 6320(20), 2001, pp. 1204
Authors:
Ganichev, SD
Ivchenko, EL
Danilov, SN
Eroms, J
Wegscheider, W
Weiss, D
Prettl, W
Citation: Sd. Ganichev et al., Conversion of spin into directed electric current in quantum wells, PHYS REV L, 86(19), 2001, pp. 4358-4361
Authors:
Hirschinger, J
Niedernostheide, FJ
Prettl, W
Novak, V
Citation: J. Hirschinger et al., Current filament patterns in n-GaAs layers with different contact geometries, PHYS REV B, 61(3), 2000, pp. 1952-1958
Authors:
Ganichev, SD
Ziemann, E
Prettl, W
Yassievich, IN
Istratov, AA
Weber, ER
Citation: Sd. Ganichev et al., Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors, PHYS REV B, 61(15), 2000, pp. 10361-10365
Authors:
Schwarz, G
Lehmann, C
Reimann, A
Scholl, E
Hirschinger, J
Prettl, W
Novak, V
Citation: G. Schwarz et al., Current filamentation in n-GaAs thin films with different contact geometries, SEMIC SCI T, 15(6), 2000, pp. 593-603
Authors:
Zepezauer, E
Kalbeck, A
Ganichev, SD
Korzenietz, W
Prettl, W
Citation: E. Zepezauer et al., Near-field induced FIR Josephson-detection by c-axis-oriented YBa2Cu3O7-delta-films, INT J INFRA, 21(3), 2000, pp. 355-363
Authors:
Lohner, A
Huber, M
Ganichev, SD
Prettl, W
Niederdellmann, H
Citation: A. Lohner et al., Visible light emission due to resonant CO2 laser excitation of dental hardtissue, INT J INFRA, 21(3), 2000, pp. 407-419
Authors:
Kalbeck, A
Terheggen, M
Zepezauer, E
Puig, T
Prettl, W
Citation: A. Kalbeck et al., Accumulation and release of self-field generated vortices in percolative YBa2Cu3O7-delta-films, INT J INFRA, 21(12), 2000, pp. 1959-1971
Authors:
Novak, V
Cukr, M
Schowalter, D
Prettl, W
Citation: V. Novak et al., Electron mobility measurement in n-GaAs at low-temperature impurity breakdown, PHYS REV B, 62(24), 2000, pp. 16768-16772
Authors:
Bel'kov, VV
Hirschinger, J
Schowalter, D
Niedernostheide, FJ
Ganichev, SD
Prettl, W
Mac Mathuna, D
Novak, V
Citation: Vv. Bel'Kov et al., Microwave-induced patterns in n-GaAs and their photoluminescence imaging, PHYS REV B, 61(20), 2000, pp. 13698-13702
Authors:
Ziemann, E
Ganichev, SD
Prettl, W
Yassievich, IN
Perel, VI
Citation: E. Ziemann et al., Characterization of deep impurities in semiconductors by terahertz tunneling ionization, J APPL PHYS, 87(8), 2000, pp. 3843-3849
Authors:
Kalbeck, A
Terheggen, M
Zepezauer, E
Prettl, W
Puig, T
Citation: A. Kalbeck et al., Storage and release of self-field-generated vortices in percolative YBa2Cu3O7-delta films, APPL PHYS L, 77(24), 2000, pp. 4019-4021
Authors:
Ganichev, SD
Ketterl, H
Prettl, W
Ivchenko, EL
Vorobjev, LE
Citation: Sd. Ganichev et al., Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs multiple-quantum wells, APPL PHYS L, 77(20), 2000, pp. 3146-3148
Authors:
Ketterl, H
Ziemann, E
Ganichev, SD
Yassievich, IN
Belyaev, A
Schmult, S
Prettl, W
Citation: H. Ketterl et al., Terahertz tunnel ionization of DX-centers in AlGaAs : Te, PHYSICA B, 274, 1999, pp. 766-769
Authors:
Shul'man, AY
Ganichev, SD
Dizhur, EM
Kotel'nikov, IN
Zepezauer, E
Prettl, W
Citation: Ay. Shul'Man et al., Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR laser radiation, PHYSICA B, 272(1-4), 1999, pp. 442-447
Authors:
Ganichev, SD
Ketterl, H
Beregulin, EV
Prettl, W
Citation: Sd. Ganichev et al., Spin-dependent terahertz nonlinearities at inter-valence-band absorption in p-Ge, PHYSICA B, 272(1-4), 1999, pp. 464-466
Authors:
Klimenta, H
Alshuth, M
Prettl, W
Kostial, H
Citation: H. Klimenta et al., Discontinuities and hysteresis in the I-V characteristics of n-GaAs at lowtemperatures, PHYS ST S-A, 176(2), 1999, pp. 1017-1024
Authors:
Shulman, AY
Ganichev, SD
Kotelnikov, IN
Dizhur, EM
Prettl, W
Ormont, AB
Fedorov, YV
Zepezauer, E
Citation: Ay. Shulman et al., Near-zone field effect of FIR laser radiation on tunnel current through the Schottky barrier under plasma reflection condition, PHYS ST S-A, 175(1), 1999, pp. 289-296
Authors:
Bel'kov, VV
Hirschinger, J
Novak, V
Niedernostheide, FJ
Ganichev, SD
Prettl, W
Citation: Vv. Bel'Kov et al., Pattern formation in semiconductors, NATURE, 397(6718), 1999, pp. 398-398
Authors:
Novak, V
Hirschinger, J
Niedernostheide, FJ
Prettl, W
Cukr, M
Oswald, J
Citation: V. Novak et al., Direct experimental observation of the Hall angle in the low-temperature breakdown regime of n-GaAs, PHYS REV B, 58(19), 1998, pp. 13099-13102
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