Authors:
Fletcher, R
Pudalov, VM
Radcliffe, ADB
Possanzini, C
Citation: R. Fletcher et al., Critical behaviour of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFETs, SEMIC SCI T, 16(5), 2001, pp. 386-393
Authors:
Brunthaler, G
Prinz, A
Bauer, G
Pudalov, VM
Citation: G. Brunthaler et al., Exclusion of quantum coherence as the origin of the 2D metallic state in high-mobility silicon inversion layers - art. no. 096802, PHYS REV L, 8709(9), 2001, pp. 6802
Citation: Bl. Altshuler et al., Metal-insulator transition in 2D: Anderson localization in temperature-dependent disorder?, PHYS ST S-B, 218(1), 2000, pp. 193-200
Authors:
Fletcher, R
Pudalov, VM
Feng, Y
Tsaousidou, M
Butcher, PN
Citation: R. Fletcher et al., Thermoelectric and hot-electron properties of a silicon inversion layer (vol 56, pg 12422, 1997), PHYS REV B, 60(11), 1999, pp. 8392-8392
Authors:
Pudalov, VM
Brunthaler, G
Prinz, A
Bauer, G
Citation: Vm. Pudalov et al., Weak-field Hall resistance and effective carrier density measurements across the metal-insulator transition in Si-MOS structures, JETP LETTER, 70(1), 1999, pp. 48-53
Citation: Av. Kornilov et Vm. Pudalov, A spherical small-sized hydrostatic-pressure cell for measuring anisotropic galvanomagnetic effects, INSTR EXP R, 42(1), 1999, pp. 127-129