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Results: 1-15 |
Results: 15

Authors: Altshuler, BL Maslov, DL Pudalov, VM
Citation: Bl. Altshuler et al., Metal-insulator transition in 2D: resistance in the critical region, PHYSICA E, 9(2), 2001, pp. 209-225

Authors: Fletcher, R Pudalov, VM Radcliffe, ADB Possanzini, C
Citation: R. Fletcher et al., Critical behaviour of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFETs, SEMIC SCI T, 16(5), 2001, pp. 386-393

Authors: Brunthaler, G Prinz, A Bauer, G Pudalov, VM
Citation: G. Brunthaler et al., Exclusion of quantum coherence as the origin of the 2D metallic state in high-mobility silicon inversion layers - art. no. 096802, PHYS REV L, 8709(9), 2001, pp. 6802

Authors: Prinz, A Pudalov, VM Brunthaler, G Bauer, G
Citation: A. Prinz et al., Metal-insulator transition in Si-MOS structures, SUPERLATT M, 27(5-6), 2000, pp. 301-310

Authors: Altshuler, BL Maslov, DL Pudalov, VM
Citation: Bl. Altshuler et al., Metal-insulator transition in 2D: Anderson localization in temperature-dependent disorder?, PHYS ST S-B, 218(1), 2000, pp. 193-200

Authors: Brunthaler, G Prinz, A Bauer, G Pudalov, VM Dizhur, EM Jaroszynski, J Glod, P Dietl, T
Citation: G. Brunthaler et al., Weak localization in the 2D metallic regime of Si-MOS, ANN PHYSIK, 8(7-9), 1999, pp. 579-584

Authors: Kornilov, AV Pudalov, VM Kochkin, AP Lyubovskaya, RN Lyubovskii, RB
Citation: Av. Kornilov et al., Behavior of the p-T phase diagram of the organic conductor (ET)(4)Hg3I8, J EXP TH PH, 88(6), 1999, pp. 1198-1201

Authors: Kornilov, AV van Bentum, PJM Brooks, JS Qualls, JS Perenboom, JAAJ Pudalov, VM
Citation: Av. Kornilov et al., Millimetre-wave magnetospectroscopy of (TMTSF)(2)PF6 under pressure, SYNTH METAL, 103(1-3), 1999, pp. 2246-2247

Authors: Sarachik, MP Kravchenko, SV Simonian, D Pudalov, VM
Citation: Mp. Sarachik et al., An unexpected conducting phase in two dimensions, PHYSICA A, 263(1-4), 1999, pp. 208-214

Authors: Pudalov, VM Brunthaler, G Prinz, A Bauer, G
Citation: Vm. Pudalov et al., Maximum metallic conductivity in Si-MOS structures, PHYS REV B, 60(4), 1999, pp. R2154-R2156

Authors: Fletcher, R Pudalov, VM Feng, Y Tsaousidou, M Butcher, PN
Citation: R. Fletcher et al., Thermoelectric and hot-electron properties of a silicon inversion layer (vol 56, pg 12422, 1997), PHYS REV B, 60(11), 1999, pp. 8392-8392

Authors: Pudalov, VM Brunthaler, G Prinz, A Bauer, G
Citation: Vm. Pudalov et al., Weak-field Hall resistance and effective carrier density measurements across the metal-insulator transition in Si-MOS structures, JETP LETTER, 70(1), 1999, pp. 48-53

Authors: Kornilov, AV Pudalov, VM
Citation: Av. Kornilov et Vm. Pudalov, A spherical small-sized hydrostatic-pressure cell for measuring anisotropic galvanomagnetic effects, INSTR EXP R, 42(1), 1999, pp. 127-129

Authors: Kravchenko, SV Simonian, D Sarachik, MP Kent, AD Pudalov, VM
Citation: Sv. Kravchenko et al., Magnetic field suppression of the conducting state in two dimensions, PHYSICA B, 258, 1998, pp. 582-586

Authors: Simonian, D Kravchenko, SV Mertes, KM Sarachik, MP Pudalov, VM
Citation: D. Simonian et al., Magnetoconductance of the anomalous 2D conducting phase in parallel field, PHYSICA B, 258, 1998, pp. 607-609
Risultati: 1-15 |