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Results: 1-20 |
Results: 20
Effects of annealing on electrical coupling in a multilayer InAs/GaAs quantum dots system
Authors: Chiquito, AJ Pusep, YA Mergulhao, S Galzerani, JC Moshegov, NT
Citation: Aj. Chiquito et al., Effects of annealing on electrical coupling in a multilayer InAs/GaAs quantum dots system, JPN J A P 1, 40(3B), 2001, pp. 1882-1884
Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices
Authors: Chiquito, AJ Pusep, YA Mergulhao, S Galzerani, JC Moshegov, NT Miller, DL
Citation: Aj. Chiquito et al., Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices, JPN J A P 1, 40(3B), 2001, pp. 2006-2009
Investigation of the InAs/GaAs self-assembled quantum dots using the relationship between the capacitance and the density of states
Authors: Chiquito, AJ Pusep, YA Mergulhao, S Galzerani, JC Moshegov, NT
Citation: Aj. Chiquito et al., Investigation of the InAs/GaAs self-assembled quantum dots using the relationship between the capacitance and the density of states, PHYSICA E, 9(2), 2001, pp. 321-325
Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy
Authors: Zanelato, G Pusep, YA Galzerani, JC Lubyshev, DI Gonzalez-Borrero, PP
Citation: G. Zanelato et al., Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy, PHYSICA E, 10(4), 2001, pp. 587-592
Raman probing of spatial extents of collective excitations in AlGaAs alloys
Authors: Pusep, YA Sokolov, SS Fortunato, W Galzerani, JC Leite, JR
Citation: Ya. Pusep et al., Raman probing of spatial extents of collective excitations in AlGaAs alloys, J PHYS-COND, 13(45), 2001, pp. 10165-10174
Raman probe of classical magnetoresistance in doped GaAs/AlAs superlattices
Authors: Pusep, YA Liang, JJ Geurts, J Moshegov, NN
Citation: Ya. Pusep et al., Raman probe of classical magnetoresistance in doped GaAs/AlAs superlattices, PHYSICA B, 298(1-4), 2001, pp. 324-328
Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy
Authors: Zanelato, G Pusep, YA Galzerani, JC Lubyshev, DI Gonzalez-Borrero, PP
Citation: G. Zanelato et al., Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy, J RAMAN SP, 32(10), 2001, pp. 857-861
Vertical longitudinal magnetoresistance of semiconductor superlattices - art. no. 165307
Authors: Pusep, YA Gusev, GM Chiquito, AJ Sokolov, SS Bakarov, AK Toropov, AI Leite, JR
Citation: Ya. Pusep et al., Vertical longitudinal magnetoresistance of semiconductor superlattices - art. no. 165307, PHYS REV B, 6316(16), 2001, pp. 5307
Collective plasma response of interacting electrons localized in disordered GaAs/AlxGa1-xAs superlattices - art. no. 115311
Authors: Pusep, YA Fortunato, W Gonzalez-Borrero, PP Toropov, AI Galzerani, JC
Citation: Ya. Pusep et al., Collective plasma response of interacting electrons localized in disordered GaAs/AlxGa1-xAs superlattices - art. no. 115311, PHYS REV B, 6311(11), 2001, pp. 5311
Capacitance-voltage profile in a structure with negative differential capacitance caused by the presence of InAs/GaAs self-assembled quantum dots
Authors: Chiquito, AJ Pusep, YA Mergulhao, S Galzerani, JC Moshegov, NT
Citation: Aj. Chiquito et al., Capacitance-voltage profile in a structure with negative differential capacitance caused by the presence of InAs/GaAs self-assembled quantum dots, PHYS REV B, 61(8), 2000, pp. 5499-5504
Effect of dispersion of "vertically" polarized collective plasmon-LO-phonon excitations on Raman scattering of strongly coupled GaAs/AlAs superlattices
Authors: Pusep, YA Silva, MTO Moshegov, NT Galzerani, JC
Citation: Ya. Pusep et al., Effect of dispersion of "vertically" polarized collective plasmon-LO-phonon excitations on Raman scattering of strongly coupled GaAs/AlAs superlattices, PHYS REV B, 61(7), 2000, pp. 4441-4444
Effect of photogenerated holes on capacitance-voltage measurements in InAs/GaAs self-assembled quantum dots
Authors: Chiquito, AJ Pusep, YA Mergulhao, S Galzerani, JC Moshegov, NT
Citation: Aj. Chiquito et al., Effect of photogenerated holes on capacitance-voltage measurements in InAs/GaAs self-assembled quantum dots, PHYS REV B, 61(7), 2000, pp. 4481-4484
Raman probing of the magnetoresistance in doped GaAs/AlAs superlattices
Authors: Pusep, YA Liang, JJ Geurts, J Moshegov, NN
Citation: Ya. Pusep et al., Raman probing of the magnetoresistance in doped GaAs/AlAs superlattices, J PHYS-COND, 12(50), 2000, pp. 10633-10638
The collective response of interacting localized electrons
Authors: Pusep, YA
Citation: Ya. Pusep, The collective response of interacting localized electrons, J PHYS-COND, 12(22), 2000, pp. L353-L360
Fourier-transform infrared reflection study of the morphology of porous semiconductor structures
Authors: Belogorokhov, A Pusep, YA Belogorokhova, L
Citation: A. Belogorokhov et al., Fourier-transform infrared reflection study of the morphology of porous semiconductor structures, J PHYS-COND, 12(16), 2000, pp. 3897-3900
Plasma response of electrons in GaAs/AlAs superlattices in the presence ofstrong localization
Authors: Pusep, YA Chiquito, AJ
Citation: Ya. Pusep et Aj. Chiquito, Plasma response of electrons in GaAs/AlAs superlattices in the presence ofstrong localization, J APPL PHYS, 88(5), 2000, pp. 3093-3095
Capacitance spectroscopy of InAs self-assembled quantum dots embedded in aGaAs/AlAs superlattice
Authors: Chiquito, AJ Pusep, YA Mergulhao, S Galzerani, JC Moshegov, NT Miller, DL
Citation: Aj. Chiquito et al., Capacitance spectroscopy of InAs self-assembled quantum dots embedded in aGaAs/AlAs superlattice, J APPL PHYS, 88(4), 2000, pp. 1987-1991
Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures
Authors: Pusep, YA Silva, MTO Galzerani, JC Rodrigues, SCP Scolfaro, LMR Lima, AP Quivy, AA Leite, JR Moshegov, NT Basmaji, P
Citation: Ya. Pusep et al., Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures, J APPL PHYS, 87(4), 2000, pp. 1825-1831
Photoluminescence and Raman characterization of heavily doped Al0.3Ga0.7Asgrown by solid-source molecular beam epitaxy using carbon tetrabromide
Authors: Lubyshev, D Micovic, M Gratteau, N Cai, WZ Miller, DL Ray, O Pusep, YA Silva, MTO Galzerani, JC Bacher, K
Citation: D. Lubyshev et al., Photoluminescence and Raman characterization of heavily doped Al0.3Ga0.7Asgrown by solid-source molecular beam epitaxy using carbon tetrabromide, J CRYST GR, 202, 1999, pp. 1089-1092
Raman study of the topology of InAs/GaAs self-assembled quantum dots
Authors: Zanelatto, G Pusep, YA Moshegov, NT Toropov, AI Basmaji, P Galzerani, JC
Citation: G. Zanelatto et al., Raman study of the topology of InAs/GaAs self-assembled quantum dots, J APPL PHYS, 86(8), 1999, pp. 4387-4389
Risultati: 1-20 |