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Results: 1-13 |
Results: 13
Kinetics of exciton photoluminescence in type-II semiconductor superlattices - art. no. 195305
Authors: Braginsky, LS Zaharov, MY Gilinsky, AM Preobrazhenskii, VV Putyato, MA Zhuravlev, KS
Citation: Ls. Braginsky et al., Kinetics of exciton photoluminescence in type-II semiconductor superlattices - art. no. 195305, PHYS REV B, 6319(19), 2001, pp. 5305
Structural transformations in low-temperature grown GaAs : Sb
Authors: Vasyukov, DA Baidakova, MV Chaldyshev, VV Suvorova, AA Preobrazhenskii, VV Putyato, MA Semyagin, BR
Citation: Da. Vasyukov et al., Structural transformations in low-temperature grown GaAs : Sb, J PHYS D, 34(10A), 2001, pp. A15-A18
Enhanced As-Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs
Authors: Chaldyshev, VV Bert, NA Musikhin, YG Suvorova, AA Preobrazhenskii, VV Putyato, MA Semyagin, BR Werner, P Gosele, U
Citation: Vv. Chaldyshev et al., Enhanced As-Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs, APPL PHYS L, 79(9), 2001, pp. 1294-1296
Accumulation of majority charge carriers in GaAs layers containing arsenicnanoclusters
Authors: Brunkov, PN Chaldyshev, VV Chernigovskii, AV Suvorova, AA Bert, NA Konnikov, SG Preobrazhenskii, VV Putyato, MA Semyagin, BR
Citation: Pn. Brunkov et al., Accumulation of majority charge carriers in GaAs layers containing arsenicnanoclusters, SEMICONDUCT, 34(9), 2000, pp. 1068-1072
Evidence for interlayer donor-acceptor recombination in type IIGaAs/AlAs superlattices
Authors: Zhuravlev, KS Petrakov, DA Gilinsky, AM Shamirzaev, TS Preobrazhenskii, VV Semyagin, BR Putyato, MA
Citation: Ks. Zhuravlev et al., Evidence for interlayer donor-acceptor recombination in type IIGaAs/AlAs superlattices, SUPERLATT M, 28(2), 2000, pp. 105-110
Interface corrugation in GaAs/AlAs (311)A superlattices
Authors: Vorob'ev, AB Gutakovsky, AK Prinz, VY Preobrazhenskii, VV Putyato, MA
Citation: Ab. Vorob'Ev et al., Interface corrugation in GaAs/AlAs (311)A superlattices, APPL PHYS L, 77(19), 2000, pp. 2976-2978
Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
Authors: Vilisova, MD Ivonin, IV Lavrentieva, LG Subach, SV Yakubenya, MP Preobrazhenskii, VV Putyato, MA Semyagin, BR Bert, NA Musikhin, YG Chaldyshev, VV
Citation: Md. Vilisova et al., Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy, SEMICONDUCT, 33(8), 1999, pp. 824-829
Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures
Authors: Kunitsyn, AE Chaldyshev, VV Vul', SP Preobrazhenskii, VV Putyato, MA Semyagin, BR
Citation: Ae. Kunitsyn et al., Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures, SEMICONDUCT, 33(10), 1999, pp. 1080-1083
Surface structure transitions on (001) GaAs during MBE
Authors: Preobrazhenskii, VV Putyato, MA Pchelyakov, OP Semyagin, BR
Citation: Vv. Preobrazhenskii et al., Surface structure transitions on (001) GaAs during MBE, J CRYST GR, 202, 1999, pp. 166-169
Experimental determination of the incorporation factor of As-4 during molecular beam epitaxy of GaAs
Authors: Preobrazhenskii, VV Putyato, MA Pchelyakov, OP Semyagin, BR
Citation: Vv. Preobrazhenskii et al., Experimental determination of the incorporation factor of As-4 during molecular beam epitaxy of GaAs, J CRYST GR, 202, 1999, pp. 170-173
Ordered arrays of arsenic clusters coincided with InAs GaAs superlattices grown by low-temperature MBE
Authors: Chaldyshev, VV Faleev, NN Bert, NA Musikhin, YG Kunitsyn, AE Preobrazhenskii, VV Putyato, MA Semyagin, BR Werner, P
Citation: Vv. Chaldyshev et al., Ordered arrays of arsenic clusters coincided with InAs GaAs superlattices grown by low-temperature MBE, J CRYST GR, 202, 1999, pp. 260-262
Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
Authors: Bert, NA Chaldyshev, VV Suvorova, AA Preobrazhenskii, VV Putyato, MA Semyagin, BR Werner, P
Citation: Na. Bert et al., Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs, APPL PHYS L, 74(11), 1999, pp. 1588-1590
In-Ga intermixing in low-temperature grown GaAs delta doped with In
Authors: Bert, NA Chaldyshev, VV Musikhin, YG Suvorova, AA Preobrazhenskii, VV Putyato, MA Semyagin, BR Werner, P
Citation: Na. Bert et al., In-Ga intermixing in low-temperature grown GaAs delta doped with In, APPL PHYS L, 74(10), 1999, pp. 1442-1444
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