Authors:
Brunkov, PN
Chaldyshev, VV
Chernigovskii, AV
Suvorova, AA
Bert, NA
Konnikov, SG
Preobrazhenskii, VV
Putyato, MA
Semyagin, BR
Citation: Pn. Brunkov et al., Accumulation of majority charge carriers in GaAs layers containing arsenicnanoclusters, SEMICONDUCT, 34(9), 2000, pp. 1068-1072
Authors:
Zhuravlev, KS
Petrakov, DA
Gilinsky, AM
Shamirzaev, TS
Preobrazhenskii, VV
Semyagin, BR
Putyato, MA
Citation: Ks. Zhuravlev et al., Evidence for interlayer donor-acceptor recombination in type IIGaAs/AlAs superlattices, SUPERLATT M, 28(2), 2000, pp. 105-110
Authors:
Vilisova, MD
Ivonin, IV
Lavrentieva, LG
Subach, SV
Yakubenya, MP
Preobrazhenskii, VV
Putyato, MA
Semyagin, BR
Bert, NA
Musikhin, YG
Chaldyshev, VV
Citation: Md. Vilisova et al., Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy, SEMICONDUCT, 33(8), 1999, pp. 824-829
Citation: Ae. Kunitsyn et al., Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures, SEMICONDUCT, 33(10), 1999, pp. 1080-1083
Authors:
Preobrazhenskii, VV
Putyato, MA
Pchelyakov, OP
Semyagin, BR
Citation: Vv. Preobrazhenskii et al., Experimental determination of the incorporation factor of As-4 during molecular beam epitaxy of GaAs, J CRYST GR, 202, 1999, pp. 170-173
Authors:
Bert, NA
Chaldyshev, VV
Suvorova, AA
Preobrazhenskii, VV
Putyato, MA
Semyagin, BR
Werner, P
Citation: Na. Bert et al., Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs, APPL PHYS L, 74(11), 1999, pp. 1588-1590