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Results: 1-9 |
Results: 9
A dynamical load-cycle charge model for RF power FETs
Authors: Collantes, JM Bouysse, P Portilla, J Quere, R
Citation: Jm. Collantes et al., A dynamical load-cycle charge model for RF power FETs, IEEE MICR W, 11(7), 2001, pp. 296-298
DSP implementation of self-synchronised chaotic encoder decoder
Authors: Penaud, S Guittard, J Bouysse, P Quere, R
Citation: S. Penaud et al., DSP implementation of self-synchronised chaotic encoder decoder, ELECTR LETT, 36(4), 2000, pp. 365-366
Low-noise FET's vulnerability prediction under RF pulsed overloads based on nonlinear electrothermal modeling
Authors: Roizes, A Lazaro, D Quere, R Teyssier, JP
Citation: A. Roizes et al., Low-noise FET's vulnerability prediction under RF pulsed overloads based on nonlinear electrothermal modeling, IEEE MICR G, 9(7), 1999, pp. 280-281
Extrapolation of a measurement-based millimeter-wave nonlinear model of pHEMT to arbitrary-shaped transistors through electromagnetic simulations
Authors: Laloue, A David, JB Quere, R Mallet-Guy, B
Citation: A. Laloue et al., Extrapolation of a measurement-based millimeter-wave nonlinear model of pHEMT to arbitrary-shaped transistors through electromagnetic simulations, IEEE MICR T, 47(6), 1999, pp. 908-914
Linear and nonlinear FET modeling applying an electromagnetic and electrical hybrid software
Authors: Larique, E Mons, S Baillargeat, D Verdeyme, S Aubourg, M Quere, R Guillon, P Zanchi, C Sombrin, J
Citation: E. Larique et al., Linear and nonlinear FET modeling applying an electromagnetic and electrical hybrid software, IEEE MICR T, 47(6), 1999, pp. 915-918
A unified approach for the linear and nonlinear stability analysis of microwave circuits using commercially available tools
Authors: Mons, S Nallatamby, JC Quere, R Savary, P Obregon, J
Citation: S. Mons et al., A unified approach for the linear and nonlinear stability analysis of microwave circuits using commercially available tools, IEEE MICR T, 47(12), 1999, pp. 2403-2409
A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameters measurements
Authors: Siriex, D Noblanc, O Barataud, D Chartier, E Brylinski, C Quere, R
Citation: D. Siriex et al., A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameters measurements, IEEE DEVICE, 46(3), 1999, pp. 580-584
Electrothermal characterisation of high power microwave silicon bipolar transistor
Authors: Bouysse, P Quere, R Villotte, JP Carves-Bideaux, N Coupat, JM
Citation: P. Bouysse et al., Electrothermal characterisation of high power microwave silicon bipolar transistor, ELECTR LETT, 35(8), 1999, pp. 666-667
40-GHz/150-ns versatile pulsed measurement system for microwave transistorisothermal characterization
Authors: Teyssier, JP Bouysse, P Ouarch, Z Barataud, D Peyretaillade, T Quere, R
Citation: Jp. Teyssier et al., 40-GHz/150-ns versatile pulsed measurement system for microwave transistorisothermal characterization, IEEE MICR T, 46(12), 1998, pp. 2043-2052
Risultati: 1-9 |