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Results: 1-19 |
Results: 19
INVESTIGATION OF THE KINETICS OF CRYSTALLIZATION OF AL A-GE BILAYER BY ELECTRICAL-CONDUCTIVITY MEASUREMENT/
Authors: KOVACS I HARMAT P SULYOK A RADNOCZI G
Citation: I. Kovacs et al., INVESTIGATION OF THE KINETICS OF CRYSTALLIZATION OF AL A-GE BILAYER BY ELECTRICAL-CONDUCTIVITY MEASUREMENT/, Thin solid films, 317(1-2), 1998, pp. 34-38
TEM STUDY OF AG2SE DEVELOPED BY THE REACTION OF POLYCRYSTALLINE SILVER FILMS AND SELENIUM
Authors: SAFRAN G GESZTI O RADNOCZI G BARNA PB
Citation: G. Safran et al., TEM STUDY OF AG2SE DEVELOPED BY THE REACTION OF POLYCRYSTALLINE SILVER FILMS AND SELENIUM, Thin solid films, 317(1-2), 1998, pp. 72-76
GROWTH AND MICROSTRUCTURE OF SPUTTERED AG CU MULTILAYERS/
Authors: CZIGANY Z KOVACS I RADNOCZI G
Citation: Z. Czigany et al., GROWTH AND MICROSTRUCTURE OF SPUTTERED AG CU MULTILAYERS/, Thin solid films, 317(1-2), 1998, pp. 266-269
TEM STUDY OF NI AND NI2SI OHMIC CONTACTS TO SIC
Authors: PECZ B RADNOCZI G CASSETTE S BRYLINSKI C ARNODO C NOBLANC O
Citation: B. Pecz et al., TEM STUDY OF NI AND NI2SI OHMIC CONTACTS TO SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1428-1431
TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAN LAYERS
Authors: PECZ B DIFORTEPOISSON MA TOTH L RADNOCZI G HUHN G PAPAIOANNOU V STOEMENOS J
Citation: B. Pecz et al., TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAN LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 93-96
NICKEL-BASED OHMIC CONTACTS ON SIC
Authors: MARINOVA T KAKANAKOVAGEORGIEVA A KRASTEV V KAKANAKOV R NESHEV M KASSAMAKOVA L NOBLANC O ARNODO C CASSETTE S BRYLINSKI C PECZ B RADNOCZI G VINCZE G
Citation: T. Marinova et al., NICKEL-BASED OHMIC CONTACTS ON SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 223-226
ANNEALING-INDUCED INTERDIFFUSION AND CRYSTALLIZATION IN SPUTTERED AMORPHOUS SI GE MULTILAYERS/
Authors: CZIGANY Z RADNOCZI G JARRENDAHL K SUNDGREN JE
Citation: Z. Czigany et al., ANNEALING-INDUCED INTERDIFFUSION AND CRYSTALLIZATION IN SPUTTERED AMORPHOUS SI GE MULTILAYERS/, Journal of materials research, 12(9), 1997, pp. 2255-2261
MICROSTRUCTURE EVOLUTION IN AMORPHOUS GE SI MULTILAYERS GROWN BY MAGNETRON SPUTTER-DEPOSITION/
Authors: JARRENDAHL K IVANOV I SUNDGREN JE RADNOCZI G CZIGANY Z GREENE JE
Citation: K. Jarrendahl et al., MICROSTRUCTURE EVOLUTION IN AMORPHOUS GE SI MULTILAYERS GROWN BY MAGNETRON SPUTTER-DEPOSITION/, Journal of materials research, 12(7), 1997, pp. 1806-1815
ALUMINUM-INDUCED CRYSTALLIZATION OF AMORPHOUS-GERMANIUM
Authors: KOVACS I GESZTI O HARMAT P RADNOCZI G
Citation: I. Kovacs et al., ALUMINUM-INDUCED CRYSTALLIZATION OF AMORPHOUS-GERMANIUM, Physica status solidi. a, Applied research, 161(1), 1997, pp. 153-165
EFFECT OF LOW HYDROSTATIC PRESSURES ON THE SOLID-STATE REACTIONS IN MULTILAYERS
Authors: DAROCZI L BEKE DL LANGER G RADNOCZI G CZIGANY Z
Citation: L. Daroczi et al., EFFECT OF LOW HYDROSTATIC PRESSURES ON THE SOLID-STATE REACTIONS IN MULTILAYERS, Journal of magnetism and magnetic materials, 156(1-3), 1996, pp. 417-418
TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF HARD COATINGS AND FILMS - SAMPLE PREPARATION ASPECTS AND RESULTS
Authors: RADNOCZI G BARNA A
Citation: G. Radnoczi et A. Barna, TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF HARD COATINGS AND FILMS - SAMPLE PREPARATION ASPECTS AND RESULTS, Surface & coatings technology, 80(1-2), 1996, pp. 89-95
STRAIN-INDUCED GROWTH-MODE TRANSITION OF V IN EPITAXIAL MO V(001) SUPERLATTICES/
Authors: BIRCH J HULTMAN L SUNDGREN JE RADNOCZI G
Citation: J. Birch et al., STRAIN-INDUCED GROWTH-MODE TRANSITION OF V IN EPITAXIAL MO V(001) SUPERLATTICES/, Physical review. B, Condensed matter, 53(12), 1996, pp. 8114-8123
TEM STUDY OF THE STRUCTURE AND MORPHOLOGY OF AGI CRYSTALS FORMED ON AG (001), (011) AND (111) THIN-FILMS
Authors: SAFRAN G GESZTI O RADNOCZI G BARNA PB TOTH K
Citation: G. Safran et al., TEM STUDY OF THE STRUCTURE AND MORPHOLOGY OF AGI CRYSTALS FORMED ON AG (001), (011) AND (111) THIN-FILMS, Thin solid films, 259(1), 1995, pp. 96-104
RELAXATION, CLUSTER FORMATION OR PRECRYSTALLIZATION IN AMORPHOUS-ALLOYS
Authors: KISDIKOSZO E ZSOLDOS E RADNOCZI G VARGA LK LOVAS A KOVAC J
Citation: E. Kisdikoszo et al., RELAXATION, CLUSTER FORMATION OR PRECRYSTALLIZATION IN AMORPHOUS-ALLOYS, Journal of magnetism and magnetic materials, 133(1-3), 1994, pp. 276-279
DEFECTS IN AMORPHOUS AND SOLID-PHASE EPITAXIAL SILICON
Authors: RADNOCZI G HASAN MA SUNDGREN JE
Citation: G. Radnoczi et al., DEFECTS IN AMORPHOUS AND SOLID-PHASE EPITAXIAL SILICON, Thin solid films, 240(1-2), 1994, pp. 39-44
FORMATION OF A-GE PARTICLES WITH NM DIMENSIONS AND THEIR BEHAVIOR DURING ANNEALING
Authors: CZIGANY Z RADNOCZI G
Citation: Z. Czigany et G. Radnoczi, FORMATION OF A-GE PARTICLES WITH NM DIMENSIONS AND THEIR BEHAVIOR DURING ANNEALING, Journal of non-crystalline solids, 175(2-3), 1994, pp. 228-237
XTEM, ELLIPSOMETRIC AND ARXPS STUDY OF A-SIOX AND A-GE THIN-FILMS ON SILICON SUBSTRATES
Authors: HUCEK S ZEMEK J RADNOCZI G SIROKY P
Citation: S. Hucek et al., XTEM, ELLIPSOMETRIC AND ARXPS STUDY OF A-SIOX AND A-GE THIN-FILMS ON SILICON SUBSTRATES, Czechoslovak journal of Physics, 44(3), 1994, pp. 245-253
THE EFFECT OF DEFECTS CAUSED BY XE ION-BOMBARDMENT ON THE STRUCTURE OF AU GAAS CONTACTS/
Authors: JAROLI E GYULAI J PECZ B VERESEGYHAZY R RADNOCZI G BARNA PB
Citation: E. Jaroli et al., THE EFFECT OF DEFECTS CAUSED BY XE ION-BOMBARDMENT ON THE STRUCTURE OF AU GAAS CONTACTS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 548-551
CRYSTALLIZATION OF ENCAPSULATED VERY THIN AMORPHOUS-GE LAYERS
Authors: RADNOCZI G PECZ B
Citation: G. Radnoczi et B. Pecz, CRYSTALLIZATION OF ENCAPSULATED VERY THIN AMORPHOUS-GE LAYERS, Thin solid films, 232(1), 1993, pp. 68-72
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