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Results: 1-25/49
Authors:
LAVIA F
ALBERTI A
RAINERI V
RAVESI S
RIMINI E
Citation: F. Lavia et al., THERMAL-STABILITY OF THIN COSI2 LAYERS ON POLYSILICON IMPLANTED WITH AS, BF2, AND SI, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1129-1136
Authors:
IACONA F
RAINERI V
LAVIA F
RIMINI E
Citation: F. Iacona et al., ROUGHNESS OF THERMAL OXIDE LAYERS GROWN ON ION-IMPLANTED SILICON-WAFERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 619-627
Authors:
CACCIATO A
RAINERI V
Citation: A. Cacciato et V. Raineri, DAMAGE ENGINEERING AND PROXIMITY GETTERING OF METALS STUDIED BY ELECTRICAL MEASUREMENTS ON PT-CONTAMINATED DIODES, Semiconductor science and technology, 13(8), 1998, pp. 941-949
Authors:
IACONA F
RAINERI V
LAVIA F
TERRASI A
RIMINI E
Citation: F. Iacona et al., ARSENIC REDISTRIBUTION AT THE SIO2 SI INTERFACE DURING OXIDATION OF IMPLANTED SILICON/, Physical review. B, Condensed matter, 58(16), 1998, pp. 10990-10999
Authors:
TERRASI A
RIMINI E
RAINERI V
IACONA F
LAVIA F
COLONNA S
MOBILIO S
Citation: A. Terrasi et al., PRECIPITATION OF AS IN THERMALLY OXIDIZED ION-IMPLANTED SI CRYSTALS, Applied physics letters, 73(18), 1998, pp. 2633-2635
Authors:
MAROLI M
PONTUALE G
KHOURY C
FRUSTERI L
RAINERI V
Citation: M. Maroli et al., ABOUT THE EASTERN LIMIT OF DISTRIBUTION OF PHLEBOTOMUS-ARIASI (DIPTERA, PSYCHODIDAE), Parasite, 4(4), 1997, pp. 377-381
Authors:
FRANCO G
CAMALLERI CM
RAINERI V
GHIDINI G
CLEMENTI C
PELLIZZER F
Citation: G. Franco et al., EFFECTS OF CLEANING AND POSTOXIDATION ANNEALING ON THIN OXIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1927-1935
Authors:
SAGGIO M
RAINERI V
LETOR R
FRISINA F
Citation: M. Saggio et al., INNOVATIVE LOCALIZED LIFETIME CONTROL IN HIGH-SPEED IGBTS, IEEE electron device letters, 18(7), 1997, pp. 333-335
Authors:
GRIMALDI MG
LAVIA F
RAINERI V
Citation: Mg. Grimaldi et al., REDUCTION OF THE C49-C54 TISI2 PHASE-TRANSFORMATION TEMPERATURE BY REACTIVE TI DEPOSITION, Europhysics letters, 40(5), 1997, pp. 581-586
Authors:
GALVAGNO G
LAFERLA A
LAVIA F
RAINERI V
GASPAROTTO A
CARNERA A
RIMINI E
Citation: G. Galvagno et al., HOLE MOBILITY IN ALUMINUM IMPLANTED SILICON, Semiconductor science and technology, 12(11), 1997, pp. 1433-1437
Authors:
GRIMALDI MG
LAVIA F
RAINERI V
BOCELLI S
GALLI M
MARABELLI F
BONOLI F
IANNUZZI M
MIGLIO L
Citation: Mg. Grimaldi et al., KINETICS OF THE C49-C54 PHASE-TRANSITION IN TISI2 - NEW INDICATIONS FROM SHEET RESISTANCE, INFRARED-SPECTROSCOPY AND MOLECULAR-DYNAMICS SIMULATIONS, Microelectronic engineering, 37-8(1-4), 1997, pp. 441-448
Authors:
LAVIA F
ALBERTI A
RAINERI V
RAVESI S
RIMINI E
Citation: F. Lavia et al., THERMAL-STABILITY OF THIN COSI2 LAYERS GROWN ON AMORPHOUS-SILICON, Microelectronic engineering, 37-8(1-4), 1997, pp. 475-481
Authors:
RAINERI V
SAGGIO M
Citation: V. Raineri et M. Saggio, RADIATION-DAMAGE AND IMPLANTED HE ATOM INTERACTION DURING VOID FORMATION IN SILICON, Applied physics letters, 71(12), 1997, pp. 1673-1675
Authors:
SPINELLA C
RAINERI V
LAVIA F
CAMPISANO SU
Citation: C. Spinella et al., 2-DIMENSIONAL JUNCTION PROFILING BY SELECTIVE CHEMICAL ETCHING - APPLICATIONS TO ELECTRON DEVICE CHARACTERIZATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 414-420
Authors:
LOMBARDO S
PINTO A
RAINERI V
WARD P
LAROSA G
PRIVITERA G
CAMPISANO SU
Citation: S. Lombardo et al., SI GEXSI1-X HETEROJUNCTION BIPOLAR-TRANSISTORS WITH THE GEXSI1-X BASEFORMED BY GE ION-IMPLANTATION IN SI/, IEEE electron device letters, 17(10), 1996, pp. 485-487
Authors:
LOMBARDO S
RAINERI V
LAVIA F
IACONA F
CAMPISANO SU
PINTO A
WARD P
Citation: S. Lombardo et al., GE ION-IMPLANTATION IN SI FOR THE FABRICATION OF SI GEXSI1-X HETEROJUNCTION TRANSISTORS/, Materials chemistry and physics, 46(2-3), 1996, pp. 156-160
Authors:
RAINERI V
CAMPISANO SU
Citation: V. Raineri et Su. Campisano, VOIDS IN SILICON AS SINK FOR INTERSTITIALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 56-59
Authors:
LOMBARDO S
RAINERI V
PORTOGHESE R
CAMPISANO SU
PINTO A
LAROSA G
WARD P
Citation: S. Lombardo et al., CHARACTERIZATION OF SI GEXSI1-X HETEROJUNCTION BIPOLAR-TRANSISTORS FORMED BY GE ION-IMPLANTATION IN SI/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 169-172
Authors:
LAFERLA A
GALVAGNO G
RINAUDO S
RAINERI V
FRANCO G
CAMALLERI M
GASPAROTTO A
CARNERA A
RIMINI E
Citation: A. Laferla et al., ION-IMPLANTATION AND DIFFUSION OF AL IN A SIO2 SI SYSTEM/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 378-381
Authors:
RAINERI V
LOMBARDO S
IACONA F
LAVIA F
Citation: V. Raineri et al., ATOMIC-FORCE MICROSCOPY ON SIO2 LAYERS GROWN ON GE IMPLANTED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 482-485
Authors:
CACCIATO A
CAMALLERI CM
FRANCO G
RAINERI V
COFFA S
Citation: A. Cacciato et al., EFFICIENCY AND THERMAL-STABILITY OF PT GETTERING IN CRYSTALLINE SI, Journal of applied physics, 80(8), 1996, pp. 4322-4327
Authors:
LOMBARDO S
LARSEN KK
RAINERI V
LAVIA F
CAMPISANO SU
LAGOMARSINO S
KAZIMIROV A
Citation: S. Lombardo et al., CHARACTERIZATION OF C COIMPLANTED GEXSI1-X EPITAXIAL LAYERS FORMED BYHIGH-DOSE GE ION-IMPLANTATION IN (100)SI, Journal of applied physics, 79(7), 1996, pp. 3456-3463
Authors:
LOMBARDO S
CACCIATO A
LARSEN KK
RAINERI V
LAVIA F
PRIVITERA V
CAMPISANO SU
Citation: S. Lombardo et al., HIGH-TEMPERATURE ANNEALING EFFECTS ON THE ELECTRICAL CHARACTERISTICS OF C IMPLANTED SI, Journal of applied physics, 79(7), 1996, pp. 3464-3469
Authors:
RAINERI V
FALLICA G
LIBERTINO S
Citation: V. Raineri et al., LIFETIME CONTROL IN SILICON DEVICES BY VOIDS INDUCED BY HE ION-IMPLANTATION, Journal of applied physics, 79(12), 1996, pp. 9012-9016
Authors:
RAINERI V
CAMPISANO SU
Citation: V. Raineri et Su. Campisano, SECONDARY DEFECT DISSOLUTION BY VOIDS IN SILICON, Applied physics letters, 69(12), 1996, pp. 1783-1785