Authors:
RAMMOHAN K
RICH DH
MACDOUGAL MH
DAPKUS PD
Citation: K. Rammohan et al., THERMAL-PROCESSING OF STRAINED INGAAS GAAS QUANTUM-WELL HETEROSTRUCTURES BONDED TO SI VIA AN EPITAXIAL LIFT-OFF TECHNIQUE/, Applied physics letters, 70(12), 1997, pp. 1599-1601
Authors:
RICH DH
RAMMOHAN K
LIN HT
TANG Y
MESHKINPOUR M
GOORSKY MS
Citation: Dh. Rich et al., EFFECT OF INTERFACE DEFECT FORMATION ON CARRIER DIFFUSION AND LUMINESCENCE IN IN0.2GA0.8AS ALXGA1-XAS QUANTUM-WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2922-2935
Authors:
RICH DH
RAMMOHAN K
TANG Y
LIN HT
GOLDMAN RS
WIEDER HH
KAVANAGH KL
Citation: Dh. Rich et al., INFLUENCE OF GAAS(001) SUBSTRATE MISORIENTATION TOWARDS (111) ON THE OPTICAL-PROPERTIES OF INXGA1-XAS GAAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1766-1772
Authors:
RAMMOHAN K
TANG Y
RICH DH
GOLDMAN RS
WIEDER HH
KAVANAGH KL
Citation: K. Rammohan et al., RELAXATION-INDUCED POLARIZED LUMINESCENCE FROM INXGA1-XAS FILMS GROWNON GAAS(001), Physical review. B, Condensed matter, 51(8), 1995, pp. 5033-5037
Citation: K. Rammohan et al., INFLUENCE OF MISFIT DISLOCATIONS ON THERMAL QUENCHING OF LUMINESCENCEIN INXGA1-XAS GAAS MULTIPLE-QUANTUM WELLS/, Journal of applied physics, 78(11), 1995, pp. 6687-6690
Authors:
RAMMOHAN K
RICH DH
GOLDMAN RS
CHEN J
WIEDER HH
KAVANAGH KL
Citation: K. Rammohan et al., STUDY OF MU-M-SCALE SPATIAL VARIATIONS IN STRAIN OF A COMPOSITIONALLYSTEP-GRADED INXGA1-XAS GAAS(001) HETEROSTRUCTURE/, Applied physics letters, 66(7), 1995, pp. 869-871
Authors:
RAJKUMAR KC
MADHUKAR A
CHEN P
KONKAR A
CHEN L
RAMMOHAN K
RICH DH
Citation: Kc. Rajkumar et al., REALIZATION OF 3-DIMENSIONALLY CONFINED STRUCTURES VIA ONE-STEP IN-SITU MOLECULAR-BEAM EPITAXY ON APPROPRIATELY PATTERNED GAAS(111)B AND GAAS(001), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1071-1074
Authors:
GOLDMAN RS
WIEDER HH
KAVANAGH KL
RAMMOHAN K
RICH DH
Citation: Rs. Goldman et al., ANISOTROPIC STRUCTURAL, ELECTRONIC, AND OPTICAL-PROPERTIES OF INGAAS GROWN BY MOLECULAR-BEAM EPITAXY ON MISORIENTED SUBSTRATES, Applied physics letters, 65(11), 1994, pp. 1424-1426
Authors:
RICH DH
RAMMOHAN K
TANG Y
LIN HT
MASERJIAN J
GRUNTHANER FJ
LARSSON A
BORENSTAIN SI
Citation: Dh. Rich et al., ABSORPTION MODULATION INDUCED BY ELECTRON-BEAM EXCITATION OF STRAINEDIN0.2GA0.8AS GAAS MULTIPLE-QUANTUM WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1717-1722