Authors:
RASKIN JP
GILLON R
CHEN J
VANHOENACKERJANVIER D
COLINGE JP
Citation: Jp. Raskin et al., ACCURATE SOI MOSFET CHARACTERIZATION AT MICROWAVE-FREQUENCIES FOR DEVICE PERFORMANCE OPTIMIZATION AND ANALOG MODELING, I.E.E.E. transactions on electron devices, 45(5), 1998, pp. 1017-1025
Authors:
EGGERMONT JP
FLANDRE D
RASKIN JP
COLINGE JP
Citation: Jp. Eggermont et al., POTENTIAL AND MODELING OF 1-MU-M SOI CMOS OPERATIONAL TRANSCONDUCTANCE AMPLIFIERS FOR APPLICATIONS UP TO 1 GHZ, IEEE journal of solid-state circuits, 33(4), 1998, pp. 640-643
Citation: Jp. Raskin et al., DIRECT EXTRACTION OF THE SERIES EQUIVALENT-CIRCUIT PARAMETERS FOR THESMALL-SIGNAL MODEL OF SOI MOSFETS, IEEE microwave and guided wave letters, 7(12), 1997, pp. 408-410
Citation: Jp. Raskin et al., SUBSTRATE CROSSTALK REDUCTION USING SOI TECHNOLOGY, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2252-2261
Authors:
CHEN J
COLINGE JP
FLANDRE D
GILLON R
RASKIN JP
VANHOENACKER D
Citation: J. Chen et al., COMPARISON OF TISI2, COSI2, AND NISI FOR THIN-FILM SILICON-ON-INSULATOR APPLICATIONS, Journal of the Electrochemical Society, 144(7), 1997, pp. 2437-2442