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Results:
1-8
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Results: 8
Authors:
RAVINDRA NM
ABEDRABBO S
GOKCE OH
TONG FM
PATEL A
VELAGAPUDI R
WILLIAMSON GD
MASZARA WP
Citation: Nm. Ravindra et al., RADIATIVE PROPERTIES OF SIMOX, IEEE transactions on components, packaging, and manufacturing technology. Part A, 21(3), 1998, pp. 441-449
Authors:
RAVINDRA NM
ABEDRABBO S
CHEN W
TONG FM
NANDA AK
SPERANZA AC
Citation: Nm. Ravindra et al., TEMPERATURE-DEPENDENT EMISSIVITY OF SILICON-RELATED MATERIALS AND STRUCTURES, IEEE transactions on semiconductor manufacturing, 11(1), 1998, pp. 30-39
Authors:
SOUW EK
MEILUNAS RJ
SZELES C
RAVINDRA NM
TONG FM
Citation: Ek. Souw et al., PHOTOCONDUCTIVITY OF CVD DIAMOND UNDER BANDGAP AND SUBBANDGAP IRRADIATIONS, DIAMOND AND RELATED MATERIALS, 6(9), 1997, pp. 1157-1171
Authors:
TONG FM
RAVINDRA NM
KOSONOCKY WF
Citation: Fm. Tong et al., DESIGN AND SIMULATION OF PERMISSIBLE TOLERANCE DURING FABRICATION OF INFRARED-INDUCED TRANSMISSION FILTERS, Optical engineering, 36(2), 1997, pp. 549-557
Authors:
KAPLINSKY MB
LI J
MCCAFFREY NJ
PATEL V
HOU ESH
RAVINDRA NM
MANIKOPOULOS CN
KOSONOCKY WF
Citation: Mb. Kaplinsky et al., RECENT ADVANCES IN THE DEVELOPMENT OF A MULTIWAVELENGTH IMAGING PYROMETER, Optical engineering, 36(11), 1997, pp. 3176-3187
Authors:
TONG FM
RAVINDRA NM
GANAPATHI L
GILES S
RAO R
Citation: Fm. Tong et al., HIGH T-C YBA2CU3O7-DELTA SUPERCONDUCTING TRANSITION-EDGE MICROBOLOMETERS, Infrared physics & technology, 36(7), 1995, pp. 1053-1058
Authors:
RAVINDRA NM
WU Y
SHAH B
SAVIN W
FINK T
LAREAU RT
PFEFFER RL
Citation: Nm. Ravindra et al., FORMATION OF TISI2 N(+)/P-SILICON JUNCTIONS BY IMPLANTATION THROUGH METAL TECHNIQUE/, Physica status solidi. a, Applied research, 140(1), 1993, pp. 283-293
Authors:
TONG FM
RAVINDRA NM
Citation: Fm. Tong et Nm. Ravindra, OPTICAL-PROPERTIES OF HG(1)-XCDXTE, Infrared physics, 34(2), 1993, pp. 207-212
Risultati:
1-8
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