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Results:
1-20
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Results: 20
Authors:
PECORA A
MARIUCCI L
CARLUCCIO R
FORTUNATO G
LEGAGNEUX P
PLAIS F
REITA C
PRIBAT D
STOEMENOS J
Citation: A. Pecora et al., COMBINED SOLID-PHASE CRYSTALLIZATION AND EXCIMER-LASER ANNEALING PROCESS FOR POLYSILICON THIN-FILM TRANSISTORS, Physica status solidi. a, Applied research, 166(2), 1998, pp. 707-714
Authors:
PETINOT F
PLAIS F
MENCARAGLIA D
LEGAGNEUX P
REITA C
HUET O
PRIBAT D
Citation: F. Petinot et al., DEFECTS IN SOLID-PHASE AND LASER CRYSTALLIZED POLYSILICON THIN-FILM TRANSISTORS, Journal of non-crystalline solids, 230, 1998, pp. 1207-1212
Authors:
VALDINOCI M
COLALONGO L
BACCARANI G
PECORA A
POLICICCHIO I
FORTUNATO G
PLAIS F
LEGAGNEUX P
REITA C
PRIBAT D
Citation: M. Valdinoci et al., ANALYSIS OF ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS UNDER STATIC AND DYNAMIC CONDITIONS, Solid-state electronics, 41(9), 1997, pp. 1363-1369
Authors:
COLALONGO L
VALDINOCI M
BACCARANI G
MIGLIORATO P
TALLARIDA G
REITA C
Citation: L. Colalongo et al., NUMERICAL-ANALYSIS OF POLY-TFTS UNDER OFF CONDITIONS, Solid-state electronics, 41(4), 1997, pp. 627-633
Authors:
GIOVANNINI S
MARIUCCI L
PECORA A
FOGLIETTI V
FORTUNATO G
REITA C
Citation: S. Giovannini et al., EXCESS NOISE IN POLYSILICON THIN-FILM TRANSISTORS OPERATED IN KINK REGIME, Electronics Letters, 33(24), 1997, pp. 2075-2077
Authors:
GIOVANNINI S
CARLUCCIO R
MARIUCCI L
PECORA A
FORTUNATO G
REITA C
PLAIS F
PRIBAT D
Citation: S. Giovannini et al., HOT-CARRIER-INDUCED MODIFICATIONS TO THE NOISE PERFORMANCE OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Applied physics letters, 71(9), 1997, pp. 1216-1218
Authors:
CARLUCCIO R
CORRADETTI A
FORTUNATO G
REITA C
LEGAGNEUX P
PLAIS F
PRIBAT D
Citation: R. Carluccio et al., NOISE PERFORMANCES IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS FABRICATED BY EXCIMER-LASER CRYSTALLIZATION, Applied physics letters, 71(5), 1997, pp. 578-580
Authors:
PRIBAT D
LEGAGNEUX P
PLAIS F
PETINOT F
HUET O
REITA C
Citation: D. Pribat et al., CRYSTALLIZATION OF AMORPHOUS-SILICON USING AN EXCIMER-LASER, Annales de physique, 22, 1997, pp. 213-224
Authors:
PLAIS F
LEGAGNEUX P
REITA C
HUET O
PETINOT F
GODARD B
STEHLE M
FOGARASSY E
Citation: F. Plais et al., LOW-TEMPERATURE POLYSILICON TFTS - A COMPARISON OF SOLID-PHASE AND LASER CRYSTALLIZATION, Microelectronic engineering, 28(1-4), 1995, pp. 443-446
Authors:
PECORA A
SCHILLIZZI M
TALLARIDA G
FORTUNATO G
REITA C
MIGLIORATO P
Citation: A. Pecora et al., OFF-CURRENT IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - AN ANALYSIS OF THE THERMALLY GENERATED COMPONENT, Solid-state electronics, 38(4), 1995, pp. 845-850
Authors:
MIGLIORATO P
REITA C
TALLARIDA G
QUINN M
FORTUNATO G
Citation: P. Migliorato et al., ANOMALOUS OFF-CURRENT MECHANISMS IN N-CHANNEL POLY-SI THIN-FILM TRANSISTORS, Solid-state electronics, 38(12), 1995, pp. 2075-2079
Authors:
CORRADETTI A
LEONI R
CARLUCCIO R
FORTUNATO G
REITA C
PLAIS F
PRIBAT D
Citation: A. Corradetti et al., EVIDENCE OF CARRIER NUMBER FLUCTUATION AS ORIGIN OF 1 F NOISE IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS/, Applied physics letters, 67(12), 1995, pp. 1730-1732
Authors:
PECORA A
TALLARIDA G
FORTUNATO G
MARIUCCI L
REITA C
MIGLIORATO P
Citation: A. Pecora et al., HOT-HOLE-INDUCED DEGRADATION IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - EXPERIMENTAL AND THEORETICAL-ANALYSIS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 33-37
Authors:
QUINN M
MIGLIORATO P
REITA C
PECORA A
TALLARIDA G
FORTUNATO G
Citation: M. Quinn et al., HIGH-FIELD EFFECTS IN POLYSILICON THIN-FILM TRANSISTORS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 45-49
Authors:
REITA C
FLUXMAN S
Citation: C. Reita et S. Fluxman, DESIGN AND OPERATION OF POLY-SI ANALOG CIRCUITS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 60-64
Authors:
FORTUNATO G
PECORA A
TALLARIDA G
MARIUCCI L
REITA C
MIGLIORATO P
Citation: G. Fortunato et al., HOT-CARRIER EFFECTS IN N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - A CORRELATION BETWEEN OFF-CURRENT AND TRANSCONDUCTANCE VARIATIONS, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 340-346
Authors:
YANG HG
FLUXMAN S
REITA C
MIGLIORATO P
Citation: Hg. Yang et al., DESIGN, MEASUREMENT AND ANALYSIS OF CMOS POLYSILICON TFT OPERATIONAL-AMPLIFIERS, IEEE journal of solid-state circuits, 29(6), 1994, pp. 727-732
Authors:
REITA C
Citation: C. Reita, INTEGRATED DRIVER CIRCUITS FOR ACTIVE-MATRIX LIQUID-CRYSTAL DISPLAYS, Displays, 14(2), 1993, pp. 104-114
Authors:
YANG HG
MIGLIORATO P
REITA C
FLUXMAN S
Citation: Hg. Yang et al., CIRCUIT PERFORMANCE OF LOW-TEMPERATURE CMOS POLYSILICON TFT OPERATIONAL-AMPLIFIERS (VOL 29, PG 38, 1993), Electronics Letters, 29(8), 1993, pp. 726-726
Authors:
YANG HG
MIGLIORATO P
REITA C
FLUXMAN S
Citation: Hg. Yang et al., CIRCUIT PERFORMANCE OF LOW-TEMPERATURE CMOS POLYSILICON TFT OPERATIONAL-AMPLIFIERS, Electronics Letters, 29(1), 1993, pp. 38-40
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