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Results:
1-14
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Results: 14
Authors:
RESCHESSER U
ESSER N
BRAR B
KROEMER H
Citation: U. Reschesser et al., MICROSCOPIC STRUCTURE OF GASB(001) C(2X6) SURFACES PREPARED BY SB DECAPPIUG OF MBE-GROWN SAMPLES, Physical review. B, Condensed matter, 55(23), 1997, pp. 15401-15404
Authors:
SPRINGER C
RESCHESSER U
GOLETTI C
RICHTER W
FIMLAND BO
Citation: C. Springer et al., SURFACE REFLECTANCE ANISOTROPY OF INDIUM-TERMINATED GAAS(100) SURFACES, Surface science, 377(1-3), 1997, pp. 404-408
Authors:
SCHINTKE S
RESCHESSER U
ESSER N
KROST A
RICHTER W
FIMLAND BO
Citation: S. Schintke et al., SURFACTANT-MEDIATED GROWTH OF INDIUM ON GAAS(001), Surface science, 377(1-3), 1997, pp. 953-957
Authors:
KNORR K
PRISTOVSEK M
RESCHESSER U
ESSER N
ZORN M
RICHTER W
Citation: K. Knorr et al., IN-SITU SURFACE PASSIVATION OF III-V SEMICONDUCTORS IN MOVPE BY AMORPHOUS AS AND P LAYERS, Journal of crystal growth, 170(1-4), 1997, pp. 230-236
Authors:
GOLETTI C
ESSER N
RESCHESSER U
WAGNER V
FOELLER J
PRISTOVSEK M
RICHTER W
Citation: C. Goletti et al., OPTICAL ANISOTROPIES OF INP(001) SURFACES, Journal of applied physics, 81(8), 1997, pp. 3611-3615
Authors:
RESCHESSER U
ESSER N
SPRINGER C
ZEGENHAGEN J
RICHTER W
CARDONA M
FIMLAND BO
Citation: U. Reschesser et al., SURFACE ORDERING ON GAAS(100) BY INDIUM-TERMINATION (VOL 13, PG 1672,1995), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 187-187
Authors:
ESSER N
RESCHESSER U
PRISTOVSEK M
RICHTER W
Citation: N. Esser et al., SCANNING-TUNNELING-MICROSCOPY STUDY OF INP(001) SURFACES PREPARED BY UHV DECAPPING OF METAL-ORGANIC VAPOR-PHASE-EPITAXY-GROWN SAMPLES, Physical review. B, Condensed matter, 53(20), 1996, pp. 13257-13259
Authors:
HERMANN BA
DIDSCHUNS I
HAIER P
KOPP M
ESSER N
RESCHESSER U
RICHTER W
LUDERS K
Citation: Ba. Hermann et al., CONDUCTIVITY OF THIN ANTIMONY FILMS AT LOW-TEMPERATURES, Thin solid films, 275(1-2), 1996, pp. 125-128
Authors:
RESCHESSER U
ESSER N
WANG DT
KUBALL M
ZEGENHAGEN J
FIMLAND BO
RICHTER W
Citation: U. Reschesser et al., SURFACE QUALITY AND ATOMIC-STRUCTURE OF MBE-GROWN GAAS(100) PREPARED BY THE DESORPTION OF A PROTECTIVE ARSENIC LAYER, Surface science, 352, 1996, pp. 71-76
Authors:
GOLETTI C
RESCHESSER U
FOELLER J
ESSER N
RICHTER W
BRAR B
KROEMER H
Citation: C. Goletti et al., A REFLECTANCE ANISOTROPY SPECTROSCOPY STUDY OF GASB(100)C(2X6) SURFACES PREPARED BY SB DECAPPING, Surface science, 352, 1996, pp. 771-775
Authors:
ESSER N
SHKREBTII AI
RESCHESSER U
SPRINGER C
RICHTER W
SCHMIDT WG
BECHSTEDT F
DELSOLE R
Citation: N. Esser et al., ATOMIC-STRUCTURE OF THE SB-STABILIZED GAAS(100)-(2X4) SURFACE, Physical review letters, 77(21), 1996, pp. 4402-4405
Authors:
RESCHESSER U
ESSER N
SPRINGER C
ZEGENHAGEN J
RICHTER W
CARDONA M
FIMLAND BO
Citation: U. Reschesser et al., SURFACE ORDERING ON GAAS(100) BY INDIUM-TERMINATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1672-1678
Authors:
ESSER N
RICHTER W
RESCHESSER U
CHIARADIA P
GOLETTI C
MORETTI L
Citation: N. Esser et al., OPTICAL ANISOTROPY OF ORDERED SB LAYERS ON III-V (110) SURFACES, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 70(3), 1994, pp. 507-519
Authors:
RESCHESSER U
FROTSCHER U
ESSER N
ROSSOW U
RICHTER W
Citation: U. Reschesser et al., GROWTH MODE AND INTERFACE FORMATION OF SB ON GAAS(100), Surface science, 309, 1994, pp. 597-602
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