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Results: 1-8 |
Results: 8
OPTICAL CHARACTERISTICS OF 1.18-EV LUMINESCENCE BAND COMPLEXES IN N-GAAS-SN(SI) - RESULTS OF A PHOTOLUMINESCENCE STUDY WITH POLARIZED RESONANT EXCITATION
Authors: GUTKIN AA RESHCHIKOV MA SEDOV VE PIOTROWSKI T PULTORAK J
Citation: Aa. Gutkin et al., OPTICAL CHARACTERISTICS OF 1.18-EV LUMINESCENCE BAND COMPLEXES IN N-GAAS-SN(SI) - RESULTS OF A PHOTOLUMINESCENCE STUDY WITH POLARIZED RESONANT EXCITATION, Semiconductors, 32(1), 1998, pp. 33-39
POLARIZATION PHOTOLUMINESCENCE STUDY OF THE COMPLEX VGATEAS IN N-TYPEGAAS IN THE TEMPERATURE-RANGE 77-230 K
Authors: GUTKIN AA RESHCHIKOV MA SEDOV VE
Citation: Aa. Gutkin et al., POLARIZATION PHOTOLUMINESCENCE STUDY OF THE COMPLEX VGATEAS IN N-TYPEGAAS IN THE TEMPERATURE-RANGE 77-230 K, Semiconductors, 31(9), 1997, pp. 908-915
MODEL OF THE JAHN-TELLER COMPLEX FORMED IN GAAS BY A GALLIUM VACANCY AND A DONOR SUBSTITUTING FOR A GALLIUM ATOM
Authors: AVERKIEV NS GUTKIN AA ILINSKII SY RESHCHIKOV MA SEDOV VE
Citation: Ns. Averkiev et al., MODEL OF THE JAHN-TELLER COMPLEX FORMED IN GAAS BY A GALLIUM VACANCY AND A DONOR SUBSTITUTING FOR A GALLIUM ATOM, Zeitschrift für physikalische Chemie, 200, 1997, pp. 209-215
MECHANISM FOR THE LOW-TEMPERATURE ALIGNMENT OF DISTORTIONS OF THE VGATEAS COMPLEXES IN N-TYPE GAAS UNDER UNIAXIAL PRESSURE
Authors: GUTKIN AA RESHCHIKOV MA SEDOV VE
Citation: Aa. Gutkin et al., MECHANISM FOR THE LOW-TEMPERATURE ALIGNMENT OF DISTORTIONS OF THE VGATEAS COMPLEXES IN N-TYPE GAAS UNDER UNIAXIAL PRESSURE, Zeitschrift für physikalische Chemie, 200, 1997, pp. 217-224
OPTICAL AND PIEZOSPECTROSCOPIC PROPERTIES AND THE STRUCTURE OF GALLIUM-VACANCY-SILICON COMPLEXES IN N-TYPE GAAS - COMPARISON WITH GALLIUM-VACANCY-TIN COMPLEXES
Authors: AVERKIEV NS GUTKIN AA RESHCHIKOV MA SEDOV VE
Citation: Ns. Averkiev et al., OPTICAL AND PIEZOSPECTROSCOPIC PROPERTIES AND THE STRUCTURE OF GALLIUM-VACANCY-SILICON COMPLEXES IN N-TYPE GAAS - COMPARISON WITH GALLIUM-VACANCY-TIN COMPLEXES, Semiconductors, 30(6), 1996, pp. 595-601
PIEZOSPECTROSCOPIC BEHAVIOR AND STRUCTURE OF THE 0.95-EV PHOTOLUMINESCENCE CENTERS IN GAAS DOPED WITH TE OR SN
Authors: GUTKIN AA RESHCHIKOV MA SOSNOVSKII VR
Citation: Aa. Gutkin et al., PIEZOSPECTROSCOPIC BEHAVIOR AND STRUCTURE OF THE 0.95-EV PHOTOLUMINESCENCE CENTERS IN GAAS DOPED WITH TE OR SN, Semiconductor science and technology, 9(12), 1994, pp. 2247-2252
INVESTIGATION OF THE VGASNGA COMPLEX IN GAAS BY THE POLARIZATION PHOTOLUMINESCENCE AND PIEZOSPECTROSCOPIC METHODS .1. STRUCTURE OF THE COMPLEX AND ITS REORIENTATION UNDER LOW UNIAXIAL PRESSURES
Authors: GUTKIN AA RESHCHIKOV MA SOSNOVSKII VR
Citation: Aa. Gutkin et al., INVESTIGATION OF THE VGASNGA COMPLEX IN GAAS BY THE POLARIZATION PHOTOLUMINESCENCE AND PIEZOSPECTROSCOPIC METHODS .1. STRUCTURE OF THE COMPLEX AND ITS REORIENTATION UNDER LOW UNIAXIAL PRESSURES, Semiconductors, 27(9), 1993, pp. 838-843
INVESTIGATION OF THE VGASNGA COMPLEX IN GAAS BY THE POLARIZATION PHOTOLUMINESCENCE AND PIEZOSPECTROSCOPIC METHODS .2. PHENOMENON OF 2-STAGEALIGNMENT
Authors: GUTKIN AA RESHCHIKOV MA SOSNOVSKII VR
Citation: Aa. Gutkin et al., INVESTIGATION OF THE VGASNGA COMPLEX IN GAAS BY THE POLARIZATION PHOTOLUMINESCENCE AND PIEZOSPECTROSCOPIC METHODS .2. PHENOMENON OF 2-STAGEALIGNMENT, Semiconductors, 27(9), 1993, pp. 844-848
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